PS9308L CEL | Alldatasheet

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R08DS0048EJ0200 Rev.2.00 Page 1 of 20 Sep 27, 2013 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. Preliminary Data Sheet PS9308L, PS9308L2

2.0 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 6-PIN SDIP PHOTOCOUPLER

DESCRIPTION

The PS9308L and PS9308L2 are optical coupled isolators containing a GaAlAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip. The PS9308L and PS9308L2 are in 6-pin plastic SDIP (Shrink Dual In-line Package). The PS9308L2 has 8 mm creepage distance. The mount area of 6-pin plastic SDIP is half size of 8-pin DIP. The PS9308L and PS9308L2 are designed specifically for high common mode transient immunity (CMR) and high switching speed. It is suitable for driving IGBTs and MOS FETs. The PS9308L is lead bending type (Gull-wing) for surface mounting. The PS9308L2 is lead bending type for long creepage distance (Gull-wing) for surface mount.

FEATURES

  • Long creepage distance (8 mm MIN.: PS9308L2)
  • Half size of 8-pin DIP
  • Peak output current (2.0 A MAX., 1.0 A MIN.)
  • High speed switching (tPLH, tPHL = 0.25 μs MAX.)
  • UVLO (Under Voltage Lock Out) protection with hysteresis
  • High common mode transient immunity (CMH, CML = ±25 kV/μs MIN.)
  • Embossed tape product : PS9308L-E3, PS9308L2-E3 : 2 000 pcs/reel
  • Pb-Free product
  • Safety standards
  • UL approved: No. E72422
  • CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
  • SEMKO approved (EN 60065, EN 60950)
  • DIN EN60747-5-5 (VDE0884-5) approved (Option)

APPLICATIONS

  • IGBT, Power MOS FET Gate Driver
  • Industrial inverter
  • IH (Induction Heating) R08DS0048EJ0200 Rev.2.00 Sep 27, 2013 1. Anode 2. NC 3. Cathode 4. VEE 5. VO 6. VCC PIN CONNECTION (Top View) 6 4 1 32 SHIELD <R> A Business Par tner of Renesas Electronics Corporation.

PS9308L, PS9308L2 Chapter Title R08DS0048EJ0200 Rev.2.00 Page 2 of 20 Sep 27, 2013 PACKAGE DIMENSIONS (UNIT: mm) Lead Bending Type (Gull-wing) For Surface Mount 0.25±0.15 9.7±0.3 3.7±0.25 0.8±0.25 0.2±0.15 7.62 3.5±0.2 6.8±0.25 4.58±0.3 (0.82) PS9308L 0.4±0.1 0.25 M 1.27 Lead Bending Type (Gull-wing) For Long Creepage Distance (Surface Mount) 0.2±0.15 PS9308L2 11.5±0.3 6.8±0.25 4.58±0.3 0.25±0.15 0.75±0.25 (0.82)3.7±0.25 3.5±0.2 7.62 0.4±0.1 0.25 M 1.27 A Busine ss Par tner of Renesas Electro nics Corpora tion.

PS9308L, PS9308L2 Chapter Title R08DS0048EJ0200 Rev.2.00 Page 3 of 20 Sep 27, 2013 PHOTOCOUPLER CONSTRUCTION Parameter PS9308L PS9308L2 Air Distance (MIN.) 7 mm 8 mm Outer Creepage Distance (MIN.) 7 mm 8 mm Isolation Distance (MIN.) 0.4 mm 0.4 mm MARKING EXAMPLE Rank Code Year Assembled (Last 1 Digit) Week Assembled N 2 31 R 9308 N231 No. 1 pin Mark Assembly Lot Type Number Company Initial <R> A Busine ss Par tner of Renesas Electro nics Corpora tion.

PS9308L, PS9308L2 Chapter Title R08DS0048EJ0200 Rev.2.00 Page 4 of 20 Sep 27, 2013

ORDERING INFORMATION

Part Number Order Number Solder Plating Specification Packing Style Safety Standard Approval Application Part Number*1 PS9308L PS9308L-AX Pb-Free 20 pcs (Tape 20 pcs cut) Standard PS9308L PS9308L-E3 PS9308L-E3-AX (Ni/Pd/Au) Embossed Tape 2 000 products pcs/reel (UL, CSA, PS9308L2 PS9308L2-AX 20 pcs (Tape 20 pcs cut) SEMKO PS9308L2 PS9308L2-E3 PS9308L2-E3-AX Embossed Tape 2 000 approved) pcs/reel PS9308L-V PS9308L-V-AX 20 pcs (Tape 20 pcs cut) DIN EN 60747-5-5 PS9308L PS9308L-V-E3 PS9308L-V-E3-AX Embossed Tape 2 000 (VDE 0884-5) pcs/reel approved (Option) PS9308L2-V PS9308L2-V-AX 20 pcs (Tape 20 pcs cut) PS9308L2 PS9308L2-V-E3 PS9308L2-V-E3-AX Embossed Tape 2 000 pcs/reel Note: *1. For the application of the Safety Standard, following part number should be used. <R> A Busine ss Par tner of Renesas Electro nics Corpora tion.

PS9308L, PS9308L2 Chapter Title R08DS0048EJ0200 Rev.2.00 Page 5 of 20 Sep 27, 2013 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Parameter Symbol Ratings Unit Diode Forward Current I F 25 mA Peak Transient Forward Current (Pulse Width < 1 μs) IF (TRAN) 1.0 A Reverse Voltage V R 5 V Detector High Level Peak Output Current IOH (PEAK) 2.0 A Low Level Peak Output Current IOL (PEAK) 2.0 A Supply Voltage (V CC−VEE) 0 to 35 V Output Voltage V O 0 to VCC V Power Dissipation *2 P C 250 mW Isolation Voltage *3 BV 5 000 Vr.m.s. Total Power Dissipation *4 P T 300 mW Operating Frequency *5 f 50 kHz Operating Ambient Temperature T A −40 to +110 °C Storage Temperature Tstg −55 to +125 °C Notes: *1. Maximum pulse width = 10 μs, Maximum duty cycle = 0.2% *2. Reduced to 4.8 mW/ °C at TA = 70°C or more. *3. AC voltage for 1 minute at T A = 25°C, RH = 60% between input and output. Pins 1-3 shorted together, 4-6 shorted together. *4. Reduced to 5.4 mW/ °C at TA = 70°C or more. RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage (VCC−VEE) 15 30 V Forward Current (ON) IF (ON) 7 10 16 mA Forward Voltage (OFF) VF (OFF) −2 0.8 V Operating Ambient Temperature T A −40 110 °C A Busine ss Par tner of Renesas Electro nics Corpora tion.

PS9308L, PS9308L2 Chapter Title R08DS0048EJ0200 Rev.2.00 Page 6 of 20 Sep 27, 2013 ELECTRICAL CHARACTERISTICS (at RECOMMENDED OPERATING CONDITIONS, VEE = GND, unless otherwise specified) Parameter Symbol Conditions MIN. TYP.*1 MAX. Unit Diode Forward Voltage V F I F = 10 mA, TA = 25°C 1.2 1.56 1.8 V Reverse Current I R V R = 3 V, TA = 25°C 10 μA Input Capacitance C IN f = 1 MHz, V F = 0 V, TA = 25°C 30 pF Detector High Level Output Current I OH V O = (VCC − 4 V) *2 1.0 1.5 A V O = (VCC − 15 V) *3 1.5 Low Level Output Current I OL V O = (VEE + 2.5 V) *2 1.0 1.5 A V O = (VEE + 15 V) *3 1.5 High Level Output Voltage V OH I O = −100 mA *4 V CC − 3.0 VCC − 1.3 V Low Level Output Voltage V OL I O = 100 mA 0.1 0.5 V High Level Supply Current I CCH I F = 10 mA, VO = open 1.2 2.0 mA Low Level Supply Current I CCL V F = 0 to 0.8 V, VO = open 1.2 2.0 mA UVLO Threshold V UVLO+ 10.8 12.3 13.4 VUVLO- 9.5 11.0 12.5 UVLO Hysteresis UVLO HYS Vo > 5V, IF = 10 mA 0.4 1.3 V Coupled Threshold Input Current (L → H) IFLH I O = 0 mA, VO > 5 V 1.8 5.0 mA Threshold Input Voltage (H → L) V FHL I O = 0 mA, VO < 5 V 0.8 V Notes: *1. Typical values at T A = 25°C. *2. Maximum pulse width = 50 μs, Maximum duty cycle = 0.5%. *3. Maximum pulse width = 10 μs, Maximum duty cycle = 0.2%. *4. V OH is measured with the DC load current in this testing. (Maximum pulse width = 2 ms, Maximum duty cycle = 20%) A Busine ss Par tner of Renesas Electro nics Corpora tion.

PS9308L, PS9308L2 Chapter Title R08DS0048EJ0200 Rev.2.00 Page 7 of 20 Sep 27, 2013 SWITCHING CHARACTERISTICS (at RECOMMENDED OPERATING CONDITIONS, VEE = GND, unless otherwise specified) Parameter Symbol Conditions MIN. TYP. *1 MAX. Unit Propagation Delay Time (L → H) t PLH R g = 10 Ω, Cg = 10 nF, 0.08 0.25 μs Propagation Delay Time (H → L) t PHL f = 10 kHz, 0.10 0.25 μs Pulse Width Distortion (PWD) |t PHL−tPLH| Duty Cycle = 50%, 0.02 0.1 μs Propagation Delay Time (Difference Between Any Two Products) tPHL−tPLH I F = 10 mA −0.1 0.1 μs Rise Time tr 50 ns Fall Time tf 50 ns Common Mode Transient Immunity at High Level Output |CM H| TA = 25°C, IF = 10 mA, VCC = 30 V, VCM = 1.5 kV, VO (MIN.) = 26 V 25 kV/ μs Common Mode Transient Immunity at Low Level Output |CM L| TA = 25°C, IF = 0 mA, VCC = 30 V, VCM = 1.5 kV, VO (MAX.) = 1 V 25 kV/ μs Note: *1. Typical values at T A = 25°C. <R> A Busine ss Par tner of Renesas Electro nics Corpora tion.

PS9308L, PS9308L2 Chapter Title R08DS0048EJ0200 Rev.2.00 Page 8 of 20 Sep 27, 2013 TEST CIRCUIT Fig. 1 IOH Test Circuit Fig. 2 IOL Test Circuit Fig. 3 VOH Test Circuit Fig. 4 VOL Test Circuit Fig. 6 IFLH Test CircuitFig. 5 UVLO Test Circuit VCC = 15 to 30 V 2.5 V 1.0 Fμ IOL IF VCC = 15 to 30 V 1.0 Fμ VO > 5 V IF = 10 mA VCC 1.0 Fμ VO > 5 V IF = 7 to 16 mA VCC = 15 to 30 V 1.0 Fμ VOH 100 mA VCC = 15 to 30 V 4 V1.0 Fμ IF = 7 to 16 mA IOH VCC = 15 to 30 V 1.0 Fμ VOL 100 mA SHIELD SHIELD SHIELD SHIELD SHIELD SHIELD A Busine ss Par tner of Renesas Electro nics Corpora tion.

PS9308L, PS9308L2 Chapter Title R08DS0048EJ0200 Rev.2.00 Page 9 of 20 Sep 27, 2013 VCC = 15 to 30 VIF = 10 mA 10 kHz 50% DUTY CYCLE 1.0 F μ VO 10 Ω 10 nF tPHLtPLH IF VOUT 90% 50% 10% tr tf VCC = 30 V VCM = 1.5 kV 1.0 Fμ A B VO IF VOH 26 V 1 V VOL VCM 0 V VO (Switch A: IF = 10 mA) VO (Switch B: IF = 0 mA) Fig. 7 tPLH, tPHL, tr, tf Test Circuit and Wave Forms Fig. 8 CMR Test Circuit and Wave Forms Δt =δ V δ t VCM Δt SHIELD SHIELD A Busine ss Par tner of Renesas Electro nics Corpora tion.

PS9308L, PS9308L2 Chapter Title R08DS0048EJ0200 Rev.2.00 Page 10 of 20 Sep 27, 2013 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) Total Power Dissipation PT (mW) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 25 50 75 125100 25 50 75 1251000 300 250 200 150 100 400 350 300 250 200 150 100 0−40 −2 00 2 04 06 08 0 1 0 0 −40 −2 00 2 04 06 08 0 1 0 0 102 4 35 0.01 0.1 100 TA = +110°C +100°C +85°C +50°C +25°C 0°C −40°C 0.0 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 VCC = 30 V, VO > 5 V, IO = 0 mA VCC = 30 V, IF = 10 mA, IO = −100 mA VCC = 30 V Ambient Temperature TA (°C)Ambient Temperature TA (°C) Detector Power Dissipation PC (mW) DETECTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Forward Voltage VF (V) Forward Current IF (mA) FORWARD CURRENT vs. FORWARD VOLTAGE Ambient Temperature TA (°C) Threshold Input Current IFLH (mA) Forward Current IF (mA) Output Voltage VO (V) OUTPUT VOLTAGE vs. FORWARD CURRENT Ambient Temperature TA (°C) High Level Output Voltage – Supply Voltage VOH – VCC (V) HIGH LEVEL OUTPUT VOLTAGE − SUPPLY VOLTAGE vs. AMBIENT TEMPERATURE THRESHOLD INPUT CURRENT vs. AMBIENT TEMPERATURE Remark The graphs indicate nominal characteristics. <R> A Busine ss Par tner of Renesas Electro nics Corpora tion.

PS9308L, PS9308L2 Chapter Title R08DS0048EJ0200 Rev.2.00 Page 11 of 20 Sep 27, 2013 TA = 25°C TA = 110°C 0.5 0.4 0.3 0.2 0.1 −40 −20 5.0 4.0 3.0 2.0 1.0 0.0 VO = VCC−4 V VO = VCC−15 V VO = VEE+15 V VO = VEE+2.5 V VCC = 30 V, IF = 0 mA VCC = 30 V, IF = 10 mA VCC = 30 V, IF = 0 mA, IO = 100mA VCC = 30 V, VO = OPEN 0 20 40 60 80 100 −40 −20 0 20 40 60 80 100 2.0 1.5 1.0 0.5 0.0 −40 −20 0 20 40 60 80 100 −40 −20 0 20 40 60 80 100 0.0 1.0 2.0 3.0 4.0 −5.0 VCC = 30 V, IF = 0 mA ICCH (IF = 10 mA) ICCL (IF = 0 mA) VCC = 30 V, IF = 10 mA TA = −40°C TA = 110°C Ambient Temperature TA (°C) High Level Output Current IOH (A) HIGH LEVEL OUTPUT CURRENT vs. AMBIENT TEMPERATURE Ambient Temperature TA (°C) Low Level Output Current IOL (A) LOW LEVEL OUTPUT CURRENT vs. AMBIENT TEMPERATURE Ambient Temperature TA (°C) Low Level Output Voltage VOL (V) LOW LEVEL OUTPUT VOLTAGE vs. AMBIENT TEMPERATURE Ambient Temperature TA (°C) High Level Supply Current ICCH (mA) Low Level Supply Current ICCL (mA) SUPPLY CURRENT vs. AMBIENT TEMPERATURE High Level Output Current IOH (A) High Level Output Voltage – Supply Voltage VOH – VCC (V) HIGH LEVEL OUTPUT VOLTAGE − SUPPLY VOLTAGE vs. HIGH LEVEL OUTPUT CURRENT Low Level Output Current IOL (A) Low Level Output Voltage VOL (V) LOW LEVEL OUTPUT VOLTAGE vs. LOW LEVEL OUTPUT CURRENT TA = 25°C TA = −40°C Remark The graphs indicate nominal characteristics. A Busine ss Par tner of Renesas Electro nics Corpora tion.

PS9308L, PS9308L2 Chapter Title R08DS0048EJ0200 Rev.2.00 Page 12 of 20 Sep 27, 2013 15 20 3025 2.0 1.5 1.0 0.5 0.0 V O = OPEN ICCH (IF = 10 mA) ICCL (IF = 0 mA) 0−40 −20 20 40 60 80 250 200 150 100 250 200 150 100 250 200 150 100 250 200 150 100 250 200 150 100 100 PWD t PLH tPHL 71 0 1 31 6 VCC = 30 V, Rg = 10 Ω, Cg = 10 nF, f = 10 kHz, Duty Cycle = 50% IF = 10 mA, Rg = 10 Ω, Cg = 10 nF, f = 10 kHz, Duty Cycle = 50% PWD tPLH tPHL 15 20 25 30 PWD tPLH tPHL 01 0 2 0 30 40 50 VCC = 30 V, IF = 10 mA, Rg = 10 Ω, f = 10 kHz, Duty Cycle = 50% PWD tPLH tPHL 0 1 02 03 04 05 0 VCC = 30 V, IF = 10 mA, Cg = 10 nF, f = 10 kHz, Duty Cycle = 50% PWD tPLH tPHL Supply Voltage VCC (V) High Level Supply Current ICCH (mA) Low Level Supply Current ICCL (mA) SUPPLY CURRENT vs. SUPPLY VOLTAGE Propagation Delay Time tPHL, tPLH (ns), PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. AMBIENT TEMPERATUREPulse Width Distortion |t PHL−tPLH| (ns) Ambient Temperature TA (°C) Propagation Delay Time tPHL, tPLH (ns), PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. FORWARD CURRENT PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. SUPPLY VOLTAGE Pulse Width Distortion |t PHL−tPLH| (ns) Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion |t PHL−tPLH| (ns) Forward Current IF (mA) Supply Voltage VCC (V) PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. LOAD CAPACITANCE Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion |t PHL−tPLH| (ns) Load Capacitance Cg (nF) PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. LOAD RESISTANCE Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion |t PHL−tPLH| (ns) Load Resistance Rg (Ω) VCC = 30 V, IF = 10 mA, Rg = 10 Ω, Cg = 10 nF, f = 10 kHz, Duty cycle = 50% Remark The graphs indicate nominal characteristics. A Busine ss Par tner of Renesas Electro nics Corpora tion.

PS9308L, PS9308L2 Chapter Title R08DS0048EJ0200 Rev.2.00 Page 13 of 20 Sep 27, 2013 IF = 10 mA, VEE = GND Supply Voltage VCC – VEE (V) POWER CONSUMPTION PER CYCLE vs. LOAD RESISTANCE 0 5 10 15 20 0 20 3010 40 50 VUVLO− VUVLO+ (12.3 V)(11.0 V) VUVLO+ UVLOHYS Power Consumption Per Cycle ESW ( J) μ Qg = 1000 nC OUTPUT VOLTAGE vs. SUPPLY VOLTAGE Output Voltage V O (V) Load Resistance Rg (Ω) Qg = 500 nC Qg = 100 nC Remark The graphs indicate nominal characteristics. A Busine ss Par tner of Renesas Electro nics Corpora tion.

PS9308L, PS9308L2 Chapter Title R08DS0048EJ0200 Rev.2.00 Page 14 of 20 Sep 27, 2013 TAPING SPECIFICATIONS (UNIT: mm) PS9308L-E3 330±2.0 100±1.0 2.0±0.5 13.0±0.2 R 1.0 21.0±0.8 2.0±0.5 17.5±1.0 21.5±1.0 2.0±0.1 4.0±0.1 5.08±0.1 8.0±0.1 1.5 +0.1 1.75±0.1 4.5 MAX. 7.5±0.1 10.2±0.1 16.0±0.3 0.35 1.5 +0.1 4.05±0.1 Outline and Dimensions (Tape) Tape Direction Outline and Dimensions (Reel) Packing: 2 000 pcs/reel <R> A Busine ss Par tner of Renesas Electro nics Corpora tion.

PS9308L, PS9308L2 Chapter Title R08DS0048EJ0200 Rev.2.00 Page 15 of 20 Sep 27, 2013 PS9308L2-E3 330±2.0 100±1.0 2.0±0.5 13.0±0.2 R 1.0 21.0±0.8 2.0±0.5 25.5±1.0 29.5±1.0 2.0±0.1 4.0±0.1 5.08±0.1 8.0±0.1 2.0 +0.1 1.5 +0.1 0.35 11.5±0.1 Outline and Dimensions (Tape) Outline and Dimensions (Reel) Tape Direction Packing: 2 000 pcs/reel 24.0±0.3 12.0±0.1 A Busine ss Par tner of Renesas Electro nics Corpora tion.

PS9308L, PS9308L2 Chapter Title R08DS0048EJ0200 Rev.2.00 Page 16 of 20 Sep 27, 2013 RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm) Part Number PS9308L PS9308L2 Lead Bending A lead bending type (Gull-wing) for long creepage distance (surface mount) lead bending type (Gull-wing) for surface mount 9.2 10.2 B 1.27 1.27 C 0.8 0.8 D 2.2 2.2 D CB A A Busine ss Par tner of Renesas Electro nics Corpora tion.

PS9308L, PS9308L2 Chapter Title R08DS0048EJ0200 Rev.2.00 Page 17 of 20 Sep 27, 2013 NOTES ON HANDLING (UNIT: mm) 1. Recommended soldering conditions (1) Infrared reflow soldering

  • Peak reflow temperature 260°C or below (package surface temperature)
  • Time of peak reflow temp erature 10 seconds or less
  • Time of temperature higher than 220 °C 60 seconds or less
  • Time to preheat temperature from 120 to 180 °C 120 ± 30 s
  • Number of reflows Three
  • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) 120±30 s (preheating) 220°C 180°C Package Surface Temperature T (°C) Time (s) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s to 60 s 260°C MAX. 120°C (2) Wave soldering
  • Temperature 260 °C or below (molten solder temperature)
  • Time 10 seconds or less
  • Preheating conditions 120 °C or below (package surface temperature)
  • Number of times One (Allowed to be dipped in solder including plastic mold portion.)
  • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by Soldering Iron
  • Peak Temperature (lead part temperature) 350 °C or below
  • Time (each pins) 3 seconds or less
  • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead (4) Cautions
  • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. A Busine ss Par tner of Renesas Electro nics Corpora tion.

PS9308L, PS9308L2 Chapter Title R08DS0048EJ0200 Rev.2.00 Page 18 of 20 Sep 27, 2013 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. USAGE CAUTIONS 1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static electricity when handling. 2. Board designing (1) By-pass capacitor of more than 1.0 μF is used between VCC and GND near device. Also, ensure that the distance between the leads of the photocoupler and capacitor is no more than 10 mm. (2) When designing the printed wiring board, ensure that the pattern of the IGBT collectors/emitters is not too close to the input block pattern of the photocoupler. If the pattern is too close to the input block and coupling occurs, a sudden fluctuation in the voltage on the IGBT output side might affect the photocoupler’s LED input, leading to malfunction or degradation of characteristics. (If the pattern needs to be close to the input block, to prevent the LED from lighting during the off state due to the abovementioned coupling, design the input-side circuit so that the bias of the LED is reversed, within the range of the recommended operating conditions, and be sure to thoroughly evaluate operation.) (3) Pin 2 (which is an NC *1 pin) can either be connected directly to the GND pin on the LED side or left open. Unconnected pins should not be used as a bypass for signals or for any other similar purpose because this may degrade the internal noise environment of the device. Note: *1. NC: Non-Connection (No Connection). 3. Make sure the rise/fall time of the forward current is 0.5 μs or less. 4. In order to avoid malfunctions, make sure th e rise/fall slope of the supply voltage is 3 V/μs or less. 5. Avoid storage at a high temperature and high humidity. A Busine ss Par tner of Renesas Electro nics Corpora tion.

PS9308L, PS9308L2 Chapter Title R08DS0048EJ0200 Rev.2.00 Page 19 of 20 Sep 27, 2013 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT Parameter Symbol Spec. Unit Climatic test class (IEC 60068-1/DIN EN 60068-1) 40/110/21 Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) U pr = 1.6 × UIORM., Pd < 5 pC UIORM Upr 1 130 1 808 Vpeak Vpeak Test voltage (partial discharge test, procedure b for all devices) Upr = 1.875 × UIORM., Pd < 5 pC Upr 2 119 V peak Highest permissible overvoltage UTR 8 000 V peak Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) 2 Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) CTI 175 Material group (DIN EN 60664-1 VDE0110 Part 1) III a Storage temperature range Tstg –55 to +125 °C Operating temperature range TA –40 to +110 °C Isolation resistance, minimum value VIO = 500 V dc at TA = 25°C VIO = 500 V dc at TA MAX. at least 100°C Ris MIN. Ris MIN. 1012 1011 Ω Ω Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current I F, Psi = 0) Power (output or total power dissipation) Isolation resistance V IO = 500 V dc at TA = Tsi Tsi Isi Psi Ris MIN. 175 400 700 mA mW Ω <R> A Busine ss Par tner of Renesas Electro nics Corpora tion.

PS9308L, PS9308L2 Chapter Title R08DS0048EJ0200 Rev.2.00 Page 20 of 20 Sep 27, 2013 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points.  Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal.  Do not burn, destroy, cut, crush, or chemically dissolve the product.  Do not lick the product or in any way allow it to enter the mouth. A Busine ss Par tner of Renesas Electro nics Corpora tion.

All trademarks and registered trademarks are the property of their respective owners. C - 1 Rev. Date Page Summary

1.00 Aug 31, 2011 − First edition issued

p.1 Modification of FEATURES p.3 Modification of MARKING EXAMPLE p.4 Modification of ORDERING INFORMATION p.7 Modification of SWITCHING CHARACTERISTICS pp.10 to 13 Addition of TYPICAL CHARACTERISTICS pp.14 to 15 Modification of TAPING SPECIFICATIONS

2.00 Sep 27, 2013

p.19 Modification of SPECIFICATION OF VDE MARKS LICENCE DOCUMENT

  1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com Refer to "http://www.renesas.com/" for the latest and detailed information. California Eastern Laboratories, Inc. 4590 Patrick Henry Drive, Santa Clara, California 95054, U.S.A. Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-651-700, Fax: +44-1628-651-804 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd.

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