DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Specifications in this document are tentative and subject to change. PS9307L,PS9307L2 −NEPOC Series− 0.6 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 6-PIN SDIP PHOTOCOUPLER Oct. 12, 2011

DESCRIPTION

The PS9307L and PS9307L2 are optical coupled isolators containing a GaAlAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip. The PS9307L and PS9307L2 are in 6-pin plastic SDIP (Shrink Dual In-line Package). The PS9307L2 has 8 mm creepage distance. The mount area of 6-pin plastic SDIP is half size of 8-pin DIP. The PS9307L and PS9307L2 are designed specifically for high common mode transient immunity (CMR) and high switching speed. It is suitable for driving IGBTs and MOS FETs. The PS9307L is lead bending type (Gull-wing) for surface mounting. The PS9307L2 is lead bending type for long creepage distance (Gull-wing) for surface mount.

FEATURES

  • Long creepage distance (8 mm MIN.: PS9307L2)
  • Half size of 8-pin DIP
  • Peak output current (0.6 A MAX., 0.4 A MIN.)
  • High speed switching (tPLH, tPHL = 0.25 /uni03BC s MAX.)
  • High common mode transient immunity (CMH, CML = ±50 kV//uni03BC s MIN.)
  • Embossed tape product : PS9307L-E3 : 2 000 pcs/reel : PS9307L2-E3: 2 000 pcs/reel
  • Pb-Free product
  • Safety standards
  • UL approved: No. E72422
  • CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
  • SEMKO approved: No. 1115598
  • DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40024069 (Option)

APPLICATIONS

  • IGBT, Power MOS FET Gate Driver
  • Industrial inverter
  • AC Servo Page 1 of 6 Oct. 12, 2011 A Business Par tner of Renesas Electronics Corporation.

Specifications in this document are tentative and subject to change. PS9307L,PS9307L2 Chapter Title PACKAGE DIMENSIONS (UNIT: mm) Lead Bending Type (Gull-wing) For Surface Mount 0.25±0.15 9.7±0.3 3.7±0.25 0.8±0.25 0.2± 0.15 7.62 3.5±0.2 6.8±0.25 4.58±0.3 (0.82) PS9307L 0.4±0.1 0.25 M 1.27 Lead Bending Type (Gull-wing) For Long Creepage Distance (Surface Mount) 0.2± 0.15 PS9307L2 11.5±0.3 6.8±0.25 4.58±0.3 0.25±0.15 0.75±0.25 (0.82)3.7±0.25 3.5±0.2 7.62 0.4±0.1 0.25 M 1.27 Page 2 of 6 Oct. 12 2011 A Business Par tner of Renesas Electronics Corporation.

Specifications in this document are tentative and subject to change. PS9307L,PS9307L2 Chapter Title PHOTOCOUPLER CONSTRUCTION Parameter PS9307L PS9307L2 Air Distance (MIN.) 7 mm 8 mm Outer Creepage Distance (MIN.) 7 mm 8 mm Isolation Distance (MIN.) 0.4 mm 0.4 mm MARKING EXAMPLE Rank Code Year Assembled (Last 1 Digit) Week Assembled N 1 31 9307 N131 No. 1 pin Mark Assembly Lot Type Number R An initial of "Renesas" Page 3 of 6 Oct. 12 2011 A Business Par tner of Renesas Electronics Corporation.

Specifications in this document are tentative and subject to change. PS9307L,PS9307L2 Chapter Title Page 4 of 6 Oct. 12 2011 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Parameter Symbol Ratings Unit Diode Forward Current IF 25 mA Peak Transient Forward Current (Pulse Width < 1 /uni03BC s) IF (TRAN) 1.0 A Reverse Voltage VR 5 V Power Dissipation *1 PD 45 mW Detector High Level Peak Output Current *2 IOH (PEAK) 0.6 A Low Level Peak Output Current *2 IOL (PEAK) 0.6 A Supply Voltage (VCC−VEE) 0 to 35 V Output Voltage VO 0 to VCC V Power Dissipation *3 PC 250 mW Isolation Voltage *4 BV 5 000 Vr.m.s. Operating Frequency f 250 kHz Operating Ambient Temperature TA −40 to +125 °C Storage Temperature Tstg −55 to +150 °C Notes: *1. Reduced to 1.2 mW/°C at TA = 110°C or more. *2. Maximum pulse width = 10 /uni03BC s, Maximum duty cycle = 0.5% *3. Reduced to 3.9 mW/°C at TA = 85°C or more. *4. AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output. Pins 1-3 shorted together, 4-6 shorted together. RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage (VCC−VEE) 10 30 V Forward Current (ON) IF (ON) 8 12 mA Forward Voltage (OFF) VF (OFF) −2 0.8 V Operating Ambient Temperature TA −40 125 °C A Business Par tner of Renesas Electronics Corporation.

Specifications in this document are tentative and subject to change. PS9307L,PS9307L2 Chapter Title Page 5 of 6 Oct. 12 2011 ELECTRICAL CHARACTERISTICS (TA = −40 to +125°C, VCC = 10 to 30 V, IF (ON) = 8 to 12 mA, VF (OFF) = −2 to 0.8 V, VEE = GND, unless otherwise specified) Parameter Symbol Conditions MIN. TYP.*1 MAX. Unit Diode Forward Voltage VF IF = 10 mA, TA = 25°C 1.3 1.56 1.8 V Reverse Current IR VR = 3 V, TA = 25°C 10 /uni03BC A Input Capacitance CIN f = 1 MHz, VF = 0 V 30 pF Detector High Level Output Current IOH VO = (VCC−4 V) *2 0.2 A Low Level Output Current IOL VO = (VEE+2.5 V) *2 0.2 A High Level Output Voltage VOH IF = 10 mA, IO = 100 mA *4 VCC−3.0 VCC−1.7 V Low Level Output Voltage VOL IF = 0 mA, IO = 100 mA 0.4 1.0 V High Level Supply Current ICCH IF = 10 mA, IO = 0 mA 1.2 2.0 mA Low Level Supply Current ICCL IF = 0 mA, IO = 0 mA 1.3 2.0 mA Coupled Threshold Input Current (L □ H) IFLH IO = 0 mA, VO > 5 V 2.1 5.0 mA Threshold Input Voltage (H □ L) VFHL IO = 0 mA, VO < 5 V 0.8 V Notes: *1. Typical values at TA = 25°C, VCC−VEE = 30 V. *2. Maximum pulse width = 50 /uni03BC s, Maximum duty cycle = 0.2%. *3. Maximum pulse width = 10 /uni03BC s, Maximum duty cycle = 0.5%. *4. VOH is measured with the DC load current in this testing. SWITCHING CHARACTERISTICS (TA = −40 to +125°C, VCC = 10 to 30 V, IF (ON) = 8 to 12 mA, VF (OFF) = −2 to 0.8 V, VEE = GND, unless otherwise specified) Parameter Symbol Conditions MIN. TYP.*1 MAX. Unit Propagation Delay Time (L □ H) tPLH Rg = 47 /uni03A9 , Cg = 3 nF, 0.040 0.075 0.175 /uni03BC s Propagation Delay Time (H □ L) tPHL f = 50 kHz, 0.040 0.090 0.175 /uni03BC s Pulse Width Distortion (PWD) |tPHL−tPLH| Duty Cycle = 50%*2, 0.090 /uni03BC s Propagation Delay Time (Difference Between Any Two Products) tPHL−tPLH IF = 10 mA, VCC = 30 V −0.120 0.120 /uni03BC s Rise Time tr 30 ns Fall Time tf 30 ns Common Mode Transient Immunity at High Level Output |CMH| TA = 25°C, IF = 10 mA, VCC = 30 V, VCM = 1.5 kV 50 kV//uni03BC s Common Mode Transient Immunity at Low Level Output |CML| TA = 25°C, VF = 0 mA, VCC = 30 V, VCM = 1.5 kV 50 kV//uni03BC s Notes: *1. Typical values at TA = 25°C, VCC−VEE = 30 V. *2. This load condition is equivalent to the IGBT load at 1 200 V/25 A. A Business Par tner of Renesas Electronics Corporation.

Specifications in this document are tentative and subject to change. PS9307L,PS9307L2 Chapter Title Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points.

  • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal.
  • Do not burn, destroy, cut, crush, or chemically dissolve the product.
  • Do not lick the product or in any way allow it to enter the mouth. Page 6 of 6 Oct. 12 2011 A Business Par tner of Renesas Electronics Corporation.