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Rev.0.01 Page 1 of 12 Preliminary Data Sheet Specifications in this document are tentative and subject to change. PS9307AL,PS9307AL2
0.6 A OUTPUT CURRENT, HIGH CMR, IGBT GATEDRIVE, 6-PIN SDIP PHOTOCOUPLER
DESCRIPTION
The PS9307AL and PS9307AL2 are optical coupled isolators containing a GaAlAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip. The PS9307AL and PS9307AL2 are in 6-pin plastic SDIP (Shrink Dual In-line Package). The PS9307AL2 has 8 mm creepage distance. The mount area of 6-pin plastic SDIP is half size of 8-pin DIP. The PS9307AL and PS9307AL2 are designed specifically for high common mode transient immunity (CMR) and high s witching speed. It is suitable for driving IGBTs and MOS FETs. The PS9307AL is lead bending type (Gull-wing) for surface mounting. The PS9307AL2 is lead bending type for long creepage distance (Gull-wing) for surface mount.
FEATURES
- Long creepage distance (8 mm MIN.: PS9307AL2)
- Half size of 8-pin DIP
- Peak output current (0.6 A MAX., 0.4 A MIN.)
- High speed switching (tPLH, tPHL = 150 ns MAX.)
- High common mode transient immunity (CMH, CML = ±50 kV/µs MIN.)
- Operating Ambient Temperature (125ºC)
- Embossed tape product : PS9307AL-E3, PS9307AL2-E3: 2 000 pcs/reel
- Pb-Free product
APPLICATIONS
- IGBT, Power MOS FET Gate Driver
- Industrial inverter
- AC Servo
- PDP Nov 19, 2012 A Busine ss Par tner of Renesas Electro nics Corpora tion.
Specifications in this docum ent are tentative and subjec t to change. PS9307AL,PS9307AL2 Chapter Title Page 2 of 12 PACKAGE DIMENSIONS (UNIT: mm) Lead Bending Type (Gull-wing) For Surface Mount Lead Bending Type (Gull-wing) For Long Cr eepage Distance (Surface Mount) A Busine ss Par tner of Renesas Electro nics Corpora tion.
Specifications in this docum ent are tentative and subjec t to change. PS9307AL,PS9307AL2 Chapter Title Page 3 of 12 PHOTOCOUPLER CONSTRUCTION Parameter PS9307AL PS9307AL2 Air Distance (MIN.) 7 mm 8 mm Outer Creepage Distance (MIN.) 7 mm 8 mm Isolation Distance (MIN.) 0.4 mm 0.4 mm MARKING EXAMPLE A Busine ss Par tner of Renesas Electro nics Corpora tion.
Specifications in this docum ent are tentative and subjec t to change. PS9307AL,PS9307AL2 Chapter Title Page 4 of 12 ABSOLUTE MAXIMUM RATINGS (TA = 25C, unless otherwise specified) Parameter Symbol Ratings Unit Diode Forward Cu rrent IF 25 mA Peak Transien t Forward Current (Pulse Width < 1 s) IF (TRAN) 1.0 A Reverse Voltage VR 5 V Power Di ssipation *1 PD 45 mW Detector High Level Peak Output Current *2 I OH (PEAK) 0.6 A Low Level Peak Output Current *2 I OL (PEAK) 0.6 A S upply Voltage (VCC VEE) 0 to 35 V Output Voltage VO 0 to VCC V Power Di ssipation *3 PC 250 mW Isolation Voltage *4 BV 5 000 Vr.m.s. Operating Frequency f 250 kHz Operating Ambient Temperature TA 40 to +125 C Storage Temperature Tstg 55 to +150 C Notes: *1. Reduced to 1.2 mW/ C at TA = 110C or more. *2. Maximum pulse width = 10 s, Maximum duty cycle = 0.5% *3. R educed to 3.9 mW/C at TA = 85C or more. *4. AC voltage for 1 minute at T A = 25C, RH = 60% between input and output. Pins 1-3 shorted together, 4-6 shorted together. RECOMMENDED OPERATING CONDITIONS Parameter Symbol M IN. T YP. MAX. Unit Supply Voltage (VCC VEE) 10 30 V Forward Current (ON) IF (ON) 8 12 mA Forward Voltage (OFF) VF (OFF) 2 0.8 V Operating Ambient Temperature TA 40 125 C A Busine ss Par tner of Renesas Electro nics Corpora tion.
Specifications in this docum ent are tentative and subjec t to change. PS9307AL,PS9307AL2 Chapter Title Page 5 of 12 ELECTRICAL CHARACTERISTICS (at RECO MMENDED OPERATING CONDITIONS, VEE = GND, unless otherwise specified) Parameter Symbol Conditions MIN. T YP.*1 MAX. Unit Diode Forward Voltage VF I F = 10 mA, TA = 25C 1.2 1.56 1.8 V Reverse Cu rrent IR V R = 3 V, TA = 25C 10 A Input Capacitance CIN f = 1 MHz, V F = 0 V 30 pF Detector High Level Output Current IOH V O = (VCC 4 V) *2 0.2 A V O = (VCC 10 V) *3 0.4 0.5 Low Level Output Current I OL V O = (VEE + 2.5 V) *2 0.2 A V O = (VEE + 10 V) *3 0.4 0.5 High Level Output Voltage VOH I F = 10 mA, IO = 100 mA *4 V CC 3.0 VCC 1.5 V Low Level Output Volt age VOL I F = 0 mA, IO = 100 mA 0.4 1.0 V High Level Supply Current ICCH I F = 10 mA, IO = 0 mA 1.0 2.0 mA Low Level Supply Current ICCL I F = 0 mA, IO = 0 mA 1.0 2.0 mA Coupled Threshold Input Current (L H) IFLH I O = 0 mA, VO > 5 V 2.5 5.0 mA Thres hold Input Voltage (H L) VFHL I O = 0 mA, VO < 5 V 0.8 V Notes: *1. Typical values at T A = 25C, VCC VEE = 30 V. *2. Maximum pulse width = 50 s, Maximum duty cycle = 0.2%. *3. Maximum pulse width = 10 s, Maximum duty cycle = 0.5%. *4. V OH is measured with the DC load current in this testing. SWITCHING CHARACTERISTICS (at RECOMMENDED OPERATING CONDITIONS, VEE = GND, unless otherwise specified) Parameter Symbol Conditions MIN. T YP.*1 MAX. Unit Propagation Delay Time (L H) tPLH R g = 47 , Cg = 3 nF, 50 100 150 ns Propagation Delay Time (H L) tPHL f = 50 kHz, 50 100 150 ns Pulse Width Distortion (PWD) |t PHLtPLH| Duty Cycle = 50%*2, 10 50 ns Propagation Delay Time (Difference Between Any Two Products) tPHLtPLH IF = 10 mA, VCC = 30 V 80 80 ns Rise Time tr 30 ns Fall Time tf 30 ns Common Mode Transient Immunity at High Level Output |CMH| T A = 25C, IF = 10 mA, VCC = 30 V, VCM = 1.5 kV 50 kV/ s Common Mode Transient Immunity at Low Level Output |CML| T A = 25C, IF = 0 mA, VCC = 30 V, VCM = 1.5 kV 50 kV/ s Notes: *1. Typical values at T A = 25C, VCCVEE = 30 V. *2. This load condition is equivalent to t he IGBT load at 1 200 V/25 A. A Busine ss Par tner of Renesas Electro nics Corpora tion.
Specifications in this docum ent are tentative and subjec t to change. PS9307AL,PS9307AL2 Chapter Title Page 6 of 12 TEST CIRCUIT A Busine ss Par tner of Renesas Electro nics Corpora tion.
Specifications in this docum ent are tentative and subjec t to change. PS9307AL,PS9307AL2 Chapter Title Page 7 of 12 Remarks 1. Common Mode Transient Immunity at High Level Output is the maximum value of dV CM/dt at which the output remains High Level (e.g. V O > 15 V). 2. Common Mode Transient Immunity at Low Level Output is the maximum value of dV CM/dt at which the output remains Low Level (e.g. V O < 1.0 V). A Busine ss Par tner of Renesas Electro nics Corpora tion.
Specifications in this docum ent are tentative and subjec t to change. PS9307AL,PS9307AL2 Chapter Title Page 8 of 12 TAPING SPECIFICATIONS (UNIT: mm) A Busine ss Par tner of Renesas Electro nics Corpora tion.
Specifications in this docum ent are tentative and subjec t to change. PS9307AL,PS9307AL2 Chapter Title Page 9 of 12 A Busine ss Par tner of Renesas Electro nics Corpora tion.
Specifications in this docum ent are tentative and subjec t to change. PS9307AL,PS9307AL2 Chapter Title Page 10 of 12 RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm) A Busine ss Par tner of Renesas Electro nics Corpora tion.
Specifications in this docum ent are tentative and subjec t to change. PS9307AL,PS9307AL2 Chapter Title Page 11 of 12 NOTES ON HANDLING (UNIT: mm) CAUTIONS REGARDING NOISE Be aware that when voltage is applied suddenly between the photocoupler ’s input and output at startup, the output transistor may enter the on state, even if the vo ltage is within the absolute maximum ratings. USAGE CAUTIONS 1. This product is weak for sta tic electricity by designed w ith high-speed integrated circuit so protect against static electricity when handling. 2. Board designing (1) By-pass capacitor of more than 1 F is used between VCC and GND near device. Also, ensure that the distance between the leads of the photocoupler and capacitor is no more than 10 mm. (2) When designing the printed wiring board, ensure that the pa ttern of the IGBT collectors/em itters is not too close to the input block pattern of the photocoupler. If the pattern is too close to the input block and coupling o ccurs, a sudden fluctuation in the voltage on the IGBT output side might affect the photocoupler’s LED input, leading to malfunction or degradation of characteristics. (If the pattern needs to be close to the input block, to prevent the LED from lighting duri ng the off state due to the abovementioned coupling, design the input-side circuit so that the bias of the LED is reversed, within the range of the recommended operating conditions, and be sure to thoroughly evaluate operation.) (3) Pin 2 (which is an NC*1 pin) can either be connected directly to the G ND pin on the LED side or left open. Unconnected pins should not be used as a bypass for signals or for any other similar pur pose because this may degrade the internal noise envir onment of the device. Note: *1. NC: Non-C onnection (No Connection). 3. Make sure the rise/fall time of the forward cu rrent is 0.5 s or less. 4. In order to avoid malfunc tions, make sure the rise/fall slope of the supply voltage is 3 V/ s or less. 5. Avoid storage at a high temperature and high humidity. A Busine ss Par tner of Renesas Electro nics Corpora tion.
Specifications in this docum ent are tentative and subjec t to change. PS9307AL,PS9307AL2 Chapter Title Page 12 of 12 Caution GaAs Pr oducts This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points.
- Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal.
- Do not burn, destroy, cut, crush, or chemically dissolve the product.
- Do not lick the product or in any way allow it to enter the mouth. A Busine ss Par tner of Renesas Electro nics Corpora tion.