PS9306L2-V

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91 fo 1 egaP 00.1.veR 0010JE7100SD80R Nov 10, 2011 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. Preliminary Data Sheet PS9306L,PS9306L2

0.6 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 6-PIN SDIP PHOTOCOUPLER

DESCRIPTION

The PS9306L and PS9306L2 are optical coupled isolators containing a GaAlAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip. The PS9306L and PS9306L2 are in 6-pin plastic SDIP (Shrink Dual In-line Package). The PS9306L2 has 8 mm creepage distance. The mount area of 6-pin plastic SDIP is half size of 8-pin DIP. The PS9306L and PS9306L2 are designed specifically for high common mode transient immunity (CMR) and high switching speed. It is suitable for driving IGBTs and MOS FETs. The PS9306L is lead bending type (Gull-wing) for surface mounting. The PS9306L2 is lead bending type for long creepage distance (Gull-wing) for surface mount.

FEATURES

• Long creepage distance (8 mm MIN.: PS9306L2)
• Half size of 8-pin DIP
• Peak output current (0.6 A MAX., 0.4 A MIN.)
• High speed switching (tPLH, tPHL = 0.4 μs MAX.)
• High common mode transient immunity (CMH, CML = ±25 kV/μs MIN.)
• Embossed tape product : PS9306L-E3, PS9306L2-E3: 2 000 pcs/reel
• Pb-Free product
• Safety standards
• UL approved: No. E72422
• CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
• SEMKO approved: No. 1115598
• DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40024069 (Option)

APPLICATIONS

• IGBT, Power MOS FET Gate Driver
• Industrial inverter
• IH (Induction Heating) R08DS0017EJ0100 Rev.1.00 Nov 10, 2011 1. Anode 2. NC 3. Cathode 4. V EE 5. VO 6. VCC 6 4 1 32 PIN CONNECTION (Top View) SHIELD<R> A Business Par tner of Renesas Electronics Corporation.

PS9306L,PS9306L2 Chapter Title 91 fo 2 egaP 00.1.veR 0010JE7100SD80R Nov 10, 2011 PACKAGE DIMENSIONS (UNIT: mm) Lead Bending Type (Gull-wing) For Surface Mount 0.25±0.15 9.7±0.3 3.7±0.25 0.8±0.25 0.2±0.15 7.62 3.5±0.2 6.8±0.25 4.58±0.3 (0.82) PS9306L 0.4±0.1 0.25 M 1.27 Lead Bending Type (Gull-wing) For Long Creepage Distance (Surface Mount) 0.2±0.15 PS9306L2 11.5±0.3 6.8±0.25 4.58±0.3 0.25±0.15 0.75±0.25 (0.82)3.7±0.25 3.5±0.2 7.62 0.4±0.1 0.25 M 1.27 A Business Par tner of Renesas Electronics Corporation.

PS9306L,PS9306L2 Chapter Title 91 fo 3 egaP 00.1.veR 0010JE7100SD80R Nov 10, 2011 PHOTOCOUPLER CONSTRUCTION 2L6039SP L6039SP retemaraP mm 8 mm 7 ).NIM( ecnatsiD riA mm 8 mm 7 ).NIM( ecnatsiD egapeerC retuO mm 4.0 mm 4.0 ).NIM( ecnatsiD noitalosI MARKING EXAMPLE Rank Code Year Assembled (Last 1 Digit) Week Assembled N 1 31 R 9306 N131 No. 1 pin Mark Assembly Lot Type Number Company Initial <R> A Business Par tner of Renesas Electronics Corporation.

PS9306L,PS9306L2 Chapter Title 91 fo 4 egaP 00.1.veR 0010JE7100SD80R Nov 10, 2011

ORDERING INFORMATION

Part Number Order Number Solder Plating Specification Packing Style Safety Standard Approval Application Part Number*1 PS9306L PS9306L-AX Pb-Free 20 pcs (Tape 20 pcs cut) Standard PS9306L PS9306L-E3 PS9306L-E3-AX (Ni/Pd/Au) Embossed Tape 2 000 products pcs/reel (UL, CSA, SEMKO PS9306L2 PS9306L2-AX 20 pcs (Tape 20 pcs cut) approved) PS9306L2 PS9306L2-E3 PS9306L2-E3-AX Embossed Tape 2 000 pcs/reel PS9306L-V PS9306L-V-AX 20 pcs (Tape 20 pcs cut) DIN EN60747-5-2 PS9306L PS9306L-V-E3 PS9306L-V-E3-AX Embossed Tape 2 000 (VDE0884 Part2) pcs/reel approved PS9306L2-V PS9306L2-V-AX 20 pcs (Tape 20 pcs cut) (Option) PS9306L2 PS9306L2-V-E3 PS9306L2-V-E3-AX Embossed Tape 2 000 pcs/reel Note: *1. For the application of the Safety Standard, following part number should be used. <R> A Business Par tner of Renesas Electronics Corporation.

PS9306L,PS9306L2 Chapter Title 91 fo 5 egaP 00.1.veR 0010JE7100SD80R Nov 10, 2011 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Parameter Symbol Ratings Unit Diode Forward Current IF 25 mA Peak Transient Forward Current (Pulse Width < 1 μs) IF (TRAN) 1.0 A Reverse Voltage VR 5 V Power Dissipation *1 PD 45 mW Detector High Level Peak Output Current *2 IOH (PEAK) 0.6 A Low Level Peak Output Current *2 IOL (PEAK) 0.6 A Supply Voltage (VCC−VEE) 0 to 35 V Output Voltage VO 0 to VCC V Power Dissipation *3 PC 250 mW Isolation Voltage *4 BV 5 000 Vr.m.s. Operating Frequency *5 f 50 kHz Operating Ambient Temperature TA −40 to +110 °C Storage Temperature Tstg −55 to +125 °C Notes: *1. Reduced to 1.2 mW/°C at TA = 85°C or more. *2. Maximum pulse width = 10 μs, Maximum duty cycle = 0.2% *3. Reduced to 4.5 mW/°C at TA = 65°C or more. *4. AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output. Pins 1-3 shorted together, 4-6 shorted together. RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage (VCC−VEE) 10 30 V Forward Current (ON) IF (ON) 8 12 mA Forward Voltage (OFF) VF (OFF) −2 0.8 V Operating Ambient Temperature TA −40 110 °C A Business Par tner of Renesas Electronics Corporation.

PS9306L,PS9306L2 Chapter Title 91 fo 6 egaP 00.1.veR 0010JE7100SD80R Nov 10, 2011 ELECTRICAL CHARACTERISTICS (TA = −40 to +110°C, VCC = 10 to 30 V, IF (ON) = 8 to 12 mA, VF (OFF) = −2 to 0.8 V, VEE = GND, unless otherwise specified) Parameter Symbol Conditions MIN. TYP.*1 MAX. Unit Diode Forward Voltage VF IF = 10 mA, TA = 25°C 1.2 1.56 1.8 V Reverse Current IR VR = 3 V, TA = 25°C 10 μA Input Capacitance CIN f = 1 MHz, VF = 0 V, TA = 25°C 30 pF Detector High Level Output Current IOH VO = (VCC − 4 V) *2 0.2 A V O = (VCC − 10 V) *3 0.4 0.5 Low Level Output Current IOL VO = (VEE + 2.5 V) *2 0.2 0.4 A V O = (VEE + 10 V) *3 0.4 0.5 High Level Output Voltage VOH IO = −100 mA *4 VCC − 4.0 VCC − 1.8 V Low Level Output Voltage VOL IO V 0.1 4.0 Am 001 = High Level Supply Current ICCH IF = 10 mA, IO = 0 mA 0.7 3.0 mA Low Level Supply Current ICCL IF = 0 mA, IO = 0 mA 1.2 3.0 mA Coupled Threshold Input Current (L → H) IFLH IO = 0 mA, VO > 5 V 7.0 mA Threshold Input Voltage (H → L) VFHL IO = 0 mA, VO < 5 V 0.8 V Isolation Capacitance CI-O VF = 0 V, f = 1 MHz, TA = 25°C 0.7 pF Notes: *1. Typical values at TA = 25°C, VCC − VEE = 30 V. *2. Maximum pulse width = 50 μs, Maximum duty cycle = 0.5%. *3. Maximum pulse width = 10 μs, Maximum duty cycle = 0.2%. *4. VOH is measured with the DC load current in this testing. <R> <R> A Business Par tner of Renesas Electronics Corporation.

PS9306L,PS9306L2 Chapter Title 91 fo 7 egaP 00.1.veR 0010JE7100SD80R Nov 10, 2011 SWITCHING CHARACTERISTICS (TA = −40 to +110°C, VCC = 10 to 30 V, IF (ON) = 8 to 12 mA, VF (OFF) = −2 to 0.8 V, VEE = GND, unless otherwise specified) Parameter Symbol Conditions MIN. TYP.*1 MAX. Unit Propagation Delay Time (L → H) tPLH Rg = 47 Ω, Cg = 3 nF, 0.05 0.18 0.4 μs Propagation Delay Time (H → L) tPHL 4.0 81.0 50.0 ,zHk 01 = f μs Pulse Width Distortion (PWD) |tPHL−tPLH| Duty Cycle = 50%*2, 0.25 μs Propagation Delay Time (Difference Between Any Two Products) tPHL−tPLH IF = 10 mA, VCC = 30 V −0.3 0.3 μs t emiT esiR r sn 05 t emiT llaF f sn 05 Common Mode Transient Immunity at High Level Output |CMH| TA = 25°C, IF = 10 mA, VCC = 30 V, VCM = 1.5 kV, VO (MIN.) = 26 V 25 kV/μs Common Mode Transient Immunity at Low Level Output |CML| TA = 25°C, IF = 0 mA, VCC = 30 V, VCM = 1.5 kV, VO (MAX.) = 1 V 25 kV/μs Notes: *1. Typical values at TA = 25°C, VCC − VEE = 30 V. *2. This load condition is equivalent to the IGBT load at 1 200 V/25 A. A Business Par tner of Renesas Electronics Corporation.

PS9306L,PS9306L2 Chapter Title 91 fo 8 egaP 00.1.veR 0010JE7100SD80R Nov 10, 2011 TEST CIRCUIT IF = VCC = 0.1 Fμ 4 V IOH 8 to 12 mA 10 to 30 V VO > 5 VIF SHIELD 6 1 VCC = 0.1 Fμ 10 to 30 V SHIELD 6 1 IF = VCC = 0.1 Fμ 100 mA VOH 8 to 12 mA 10 to 30 V SHIELD 6 1 4 100 mA VCC = 0.1 Fμ 2.5 V 10 to 30 V SHIELD 6 1 IOL VCC = 0.1 Fμ 10 to 30 V SHIELD 6 1 VOL Fig. 1 IOH Test Circuit Fig. 3 VOH Test Circuit Fig. 5 IFLH I 6 .giFtiucriC tseT CCH/ICCL Test Circuit Fig. 4 VOL Test Circuit Fig. 2 IOL Test Circuit VCC = 0.1 Fμ ICCL: IF = 0 mA ICCH: IF = 10 mA 10 to 30 V SHIELD 6 1 <R> A Business Par tner of Renesas Electronics Corporation.

PS9306L,PS9306L2 Chapter Title 91 fo 9 egaP 00.1.veR 0010JE7100SD80R Nov 10, 2011 47 Ω 3 nF IF = 10 mA 10 kHz 50% DUTY CYCLE tPHLtPLH IF VOUT 90% 50% 10% tr tf IF A B VCM = 1.5 kV VOH VOL 1 V

26 VVO

90% 10% VO VCC = 0.1 Fμ 10 to 30 V SHIELD 6 1 VO VCC = 30 V 0.1 Fμ SHIELD 6 1 Fig. 7 tPLH, tPHL, tr, tf Test Circuit and Wave Forms Fig. 8 CMR Test Circuit and Wave Forms (Switch A: IF = 10 mA) (Switch B: IF = 0 mA)+ − Remarks 1. Common Mode Transient Immunity at High Level Output is the maximum value of dVCM/dt at which the output remains High Level (e.g. VO > 26 V). 2. Common Mode Transient Immunity at Low Level Output is the maximum value of dVCM/dt at which the output remains Low Level (e.g. VO < 1.0 V). <R> <R> A Business Par tner of Renesas Electronics Corporation.

PS9306L,PS9306L2 Chapter Title 91 fo 01 egaP 00.1.veR 0010JE7100SD80R Nov 10, 2011 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) –25 25 50 75 125100–50 02 60 4 7 –25 25 50 75 125100–50 0 VCC = 30 V, VO > 5 V, IO = 0 mA 25 50 75 1251000 25 50 75 125100 300 250 200 150 100 Ambient Temperature TA (°C) Detector Power Dissipation PC (mW) DETECTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Ambient Temperature TA (°C) Diode Power Dissipation PD (mW) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Forward Current IF (mA) Output Voltage VO (V) THRESHOLD INPUT CURRENT vs. AMBIENT TEMPERATURE OUTPUT VOLTAGE vs. FORWARD CURRENT Forward Voltage VF (V) Forward Current IF (mA) Ambient Temperature TA (°C) Threshold Input Current IFLH (mA) FORWARD CURRENT vs. FORWARD VOLTAGE High Level Output Voltage – Supply Voltage VOH – VCC (V) Ambient Temperature TA (°C) HIGH LEVEL OUTPUT VOLTAGE – SUPPLY VOLTAGE vs. AMBIENT TEMPERATURE VCC = 30 V VCC = 30 V, IF = 10 mA, IO = –100 mA 1.0 0.01 0.1 100 TA = +110°C +100°C +85°C +50°C +25°C 0°C –40°C –0.5 –1.5 –2.5 –3.5 Remark The graphs indicate nominal characteristics. <R> A Business Par tner of Renesas Electronics Corporation.

PS9306L,PS9306L2 Chapter Title 91 fo 11 egaP 00.1.veR 0010JE7100SD80R Nov 10, 2011 VCC = 30 V, VO = OPEN 2.5 1.5 0.5 –25 25 50 75 125100–50 0 ICCL (IF = 0 mA) ICCH (IF = 10 mA) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 –25 25 50 75 125100–50 0 V CC = 30 V, IF = 0 mA, VOL = 2.5 V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VCC = 30 V, IF = 10 mA, (VCC – VOH) = 4 V –25 25 50 75 125100 –50 0 HIGH LEVEL OUTPUT CURRENT vs. AMBIENT TEMPERATURE Ambient Temperature TA (°C) High Level Output Current IOH (A) Ambient Temperature TA (°C) LOW LEVEL OUTPUT CURRENT vs. AMBIENT TEMPERATURE LOW LEVEL OUTPUT VOLTAGE vs. AMBIENT TEMPERATUREAmbient Temperature TA (°C) High Level Output Current IOH (A) Ambient Temperature TA (°C) Low Level Output Current IOL (A) LOW LEVEL OUTPUT VOLTAGE vs. LOW LEVEL OUTPUT CURRENT High Level Supply Current ICCH (mA), Low Level Supply Current ICCL (mA) Low Level Output Current IOL (A) Low Level Output Voltage VOL (V) SUPPLY CURRENT vs. AMBIENT TEMPERATURE Low Level Output Voltage VOL (V) High Level Output Voltage – Supply Voltage VOH – VCC (V) HIGH LEVEL OUTPUT VOLTAGE – SUPPLY VOLTAGE vs. HIGH LEVEL OUTPUT CURRENT –25 25 50 75 125100–50 0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 V CC = 30 V, IF = 0 mA, IO = 100 mA VCC = 30 V, IF = 10 mA VCC = 30 V, IF = 0 mA Remark The graphs indicate nominal characteristics. A Business Par tner of Renesas Electronics Corporation.

PS9306L,PS9306L2 Chapter Title 91 fo 21 egaP 00.1.veR 0010JE7100SD80R Nov 10, 2011 0 50 100 VCC = 30 V, IF = 10 mA, Cg = 3 nF, f = 10 kHz, Duty cycle = 50% tPHL tPLH 400 350 300 250 200 150 100 50 1000 400 350 300 250 200 150 100 V CC = 30 V, IF = 10 mA, Rg = 47 Ω, f = 10 kHz, Duty cycle = 50% tPHL tPLH 15 20 302510 400 350 300 250 200 150 100 I F = 10 mA, Rg = 47 Ω, Cg = 3 nF, f = 10 kHz, Duty cycle = 50% tPHL tPLH 5201 200 VCC = 30 V, Rg = 47 Ω, Cg = 3 nF, f = 10 kHz, Duty cycle = 50% 400 350 300 250 200 150 100 tPHL tPLH 400 350 300 250 200 150 100 VCC = 30 V, IF = 10 mA, Rg = 47 Ω, Cg = 3 nF, f = 10 kHz, Duty cycle = 50% –25 25 50 75 125100–50 0 tPHL tPLH PWD 035101 25 VO = OPEN 2.5 1.5 0.5 ICCH (IF = 10 mA) ICCL (IF = 0 mA) Ambient Temperature TA (°C)Supply Voltage VCC (V) SUPPLY CURRENT vs. SUPPLY VOLTAGE High Level Supply Current ICCH (mA), Low Level Supply Current ICCL (mA) PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. AMBIENT TEMPERATURE Supply Voltage VCC (V) PROPAGATION DELAY TIME vs. SUPPLY VOLTAGE Forward Current IF (mA) PROPAGATION DELAY TIME vs. FORWARD CURRENT Load Capacitance Cg (nF) PROPAGATION DELAY TIME vs. LOAD CAPACITANCE PROPAGATION DELAY TIME vs. LOAD RESISTANCE Load Resistance Rg (Ω) Propagation Delay Time tPHL, tPLH (ns) Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL – tPLH (ns)Propagation Delay Time tPHL, tPLH (ns) Propagation Delay Time tPHL, tPLH (ns) Propagation Delay Time tPHL, tPLH (ns) Remark The graphs indicate nominal characteristics. A Business Par tner of Renesas Electronics Corporation.

PS9306L,PS9306L2 Chapter Title 91 fo 31 egaP 00.1.veR 0010JE7100SD80R Nov 10, 2011 TAPING SPECIFICATIONS (UNIT: mm) PS9306L-E3 330±2.0 100±1.0 2.0±0.5 13.0±0.2 R 1.0 21.0±0.8 2.0±0.5 17.5±1.0 21.5±1.0 2.0±0.1 4.0±0.1 5.08±0.1 8.0±0.1 1.5 +0.1–0 1.75±0.1 4.5 MAX. 7.5±0.1 10.2±0.1 16.0±0.3 0.35 1.5 +0.1 4.05±0.1 Outline and Dimensions (Tape) Tape Direction Outline and Dimensions (Reel) Packing: 2 000 pcs/reel 15.9 to 19.4 Outer edge of flange <R> A Business Par tner of Renesas Electronics Corporation.

PS9306L,PS9306L2 Chapter Title 91 fo 41 egaP 00.1.veR 0010JE7100SD80R Nov 10, 2011 PS9306L2-E3 330±2.0 100±1.0 2.0±0.5 13.0±0.2 R 1.0 21.0±0.8 2.0±0.5 25.5±1.0 29.5±1.0 2.0±0.1 4.0±0.1 5.08±0.1 8.0±0.1 2.0 +0.1–0 1.5 +0.1 0.35 11.5±0.1 Outline and Dimensions (Tape) Outline and Dimensions (Reel) Tape Direction Packing: 2 000 pcs/reel 23.9 to 27.4 Outer edge of flange 24.0±0.3 12.0±0.1 A Business Par tner of Renesas Electronics Corporation.

PS9306L,PS9306L2 Chapter Title 91 fo 51 egaP 00.1.veR 0010JE7100SD80R Nov 10, 2011 RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm) Part Number PS9306L PS9306L2 Lead Bending A lead bending type (Gull-wing) for long creepage distance (surface mount) lead bending type (Gull-wing) for surface mount 9.2 10.2 B 1.27 1.27 C 0.8 0.8 D 2.2 2.2 D CB A <R> A Business Par tner of Renesas Electronics Corporation.

PS9306L,PS9306L2 Chapter Title 91 fo 61 egaP 00.1.veR 0010JE7100SD80R Nov 10, 2011 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering 062 erutarepmet wolfer kaeP • °C or below (package surface temperature)

• Time of peak reflow temperature 10 seconds or less
• Time of temperature higher than 220°C 60 seconds or less
• Time to preheat temperature from 120 to 180°C 120±30 s eerhT swolfer fo rebmuN • xulf ehT( enirolhc fo tnuoma llams gniniatnoc xulf nisoR xulF • with a maximum chlorine content of 0.2 Wt% is recommended.) 120±30 s (preheating) 220°C 180°C Package Surface Temperature T (°C) Time (s) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s to 60 s 260°C MAX. 120°C (2) Wave soldering
• Temperature 260°C or below (molten solder temperature)
• Time 10 seconds or less
• Preheating conditions 120°C or below (package surface temperature)
• Number of times One (Allowed to be dipped in solder including plastic mold portion.)
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by Soldering Iron
• Peak Temperature (lead part temperature) 350°C or below ssel ro sdnoces 3 )snip hcae( emiT • a htiw xulf ehT( enirolhc fo tnuoma llams gniniatnoc xulf nisoR xulF • maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead (4) Cautions
• Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. <R> A Business Par tner of Renesas Electronics Corporation.

PS9306L,PS9306L2 Chapter Title 91 fo 71 egaP 00.1.veR 0010JE7100SD80R Nov 10, 2011 USAGE CAUTIONS 1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static electricity when handling. 2. Board designing (1) By-pass capacitor of more than 0.1 μF is used between VCC and GND near device. Also, ensure that the distance between the leads of the photocoupler and capacitor is no more than 10 mm. (2) When designing the printed wiring board, ensure that the pattern of the IGBT collectors/emitters is not too close to the input block pattern of the photocoupler. If the pattern is too close to the input block and coupling occurs, a sudden fluctuation in the voltage on the IGBT output side might affect the photocoupler’s LED input, leading to malfunction or degradation of characteristics. (If the pattern needs to be close to the input block, to prevent the LED from lighting during the off state due to the abovementioned coupling, design the input-side circuit so that the bias of the LED is reversed, within the range of the recommended operating conditions, and be sure to thoroughly evaluate operation.) (3) Pin 2 (which is an NC*1 pin) can either be connected directly to the GND pin on the LED side or left open. Unconnected pins should not be used as a bypass for signals or for any other similar purpose because this may degrade the internal noise environment of the device. Note: *1. NC: Non-Connection (No Connection). 3. Make sure the rise/fall time of the forward current is 0.5 μs or less. 4. In order to avoid malfunctions, make sure the rise/fall slope of the supply voltage is 3 V/μs or less. 5. Avoid storage at a high temperature and high humidity. <R> A Business Par tner of Renesas Electronics Corporation.

PS9306L,PS9306L2 Chapter Title 91 fo 81 egaP 00.1.veR 0010JE7100SD80R Nov 10, 2011 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT tinU .cepS lobmyS retemaraP Climatic test class (IEC 60068- 12/011/04 )1-86006 NE NID/1 Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) Upr = 1.6 × UIORM., Pd < 5 pC UIORM Upr 1 130 1 808 Vpeak Vpeak Test voltage (partial discharge test, procedure b for all devices) Upr = 1.875 × UIORM., Pd < 5 pC Upr 2 119 Vpeak U egatlovrevo elbissimrep tsehgiH TR 8 000 Vpeak 2 )1 traP 0110EDV 1-46606 NE NID( noitullop fo eergeD Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) CTI 175 Material group (DIN EN 60664 a III )1 traP 0110EDV 1- T egnar erutarepmet egarotS stg –55 to +125 °C T egnar erutarepmet gnitarepO A –40 to +110 °C Isolation resistance, minimum value VIO = 500 V dc at TA = 25°C VIO = 500 V dc at TA MAX. at least 100°C Ris MIN. Ris MIN. 1012 1011 Ω Ω Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = Tsi Tsi Isi Psi Ris MIN. 175 400 700 mA mW Ω <R> A Business Par tner of Renesas Electronics Corporation.

PS9306L,PS9306L2 Chapter Title 91 fo 91 egaP 00.1.veR 0010JE7100SD80R Nov 10, 2011 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points.

• Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth. A Business Par tner of Renesas Electronics Corporation.

All trademarks and registered trademarks are the property of their respective owners. C - 1 Rev. Date Page Summary

0.01 Aug 20, 2010 − First edition issued

1.00 Nov 10, 2011 Throughout Preliminary Data Sheet → Data Sheet

Throughout Safety standards approved p.3 Modification of MARKING EXAMPLE p.6 Modification of ELECTRICAL CHARACTERISTICS p.8 Addition of TEST CIRCUIT Fig. 6 p.9 Modification of TEST CIRCUIT Fig. 7, 8 pp.10 to 12 Addition of TYPICAL CHARACTERISTICS pp.13, 14 Addition of TAPING SPECIFICATIONS p.15 Addition of RECOMMENDED MOUNT PAD DIMENSIONS p.16 Modification of NOTES ON HANDLING p.17 Modification of USAGE CAUTIONS p.18 Addition of SPECIFICATION OF VDE MARKS LICENSE DOCUMENT