PS9305L-V

PS9305L CEL | Alldatasheet

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Technical content

R08DS0013EJ0100 Rev.1.00 Page 1 of 18 May 16, 2011 PIN CONNECTION (Top View) 1. Anode 2. Cathode 3. Cathode 4. NC 5. V EE 6. VEE 7. VO 8. VCC 12 34 87 65 SHIELD The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. Preliminary Data Sheet PS9305L

2.5 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 8-PIN SDIP PHOTOCOUPLER

DESCRIPTION

The PS9305L is an optically coupled isolator containing a Ga AlAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip. The PS9305L is designed specifically for high common mode transient immunity (CMR), high output current and high switching speed. The PS9305L is suitable for driving IGBTs and MOS FETs.

FEATURES

• Long creepage distance (8 mm MIN.)  Large peak output current (2.5 A MAX., 2.0 A MIN.)  High speed switching (t PLH, tPHL = 0.25 μs MAX.)  UVLO (Under Voltage Lock Out) protection with hysteresis  High common mode transient immunity (CM H, CML = ±25 kV/μs MIN.)  Embossed tape product: PS9305L-E3: 2 000 pcs/reel  Pb-Free product  Safety standards  UL approved: No. E72422  CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)  DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40024069 (Option)

APPLICATIONS

 IGBT, Power MOS FET Gate Driver  Industrial inverter  IH (Induction Heating) R08DS0013EJ0100 Rev.1.00 May 16, 2011 <R> <R> <R>

R08DS0013EJ0100 Rev.1.00 Page 2 of 18 May 16, 2011 PACKAGE DIMENSIONS (UNIT: mm) 5.85±0.25 6.8±0.25 (0.82) (7.62) 9.7±0.3 0.84±0.25 0.2±0.15 0.25±0.15 3.5±0.2 3.7±0.25 1.27 0.4±0.1 0.25 M PHOTOCOUPLER CONSTRUCTION Parameter Unit (MIN.) Air Distance 7 mm Outer Creepage Distance 8 mm Isolation Distance 0.4 mm

R08DS0013EJ0100 Rev.1.00 Page 3 of 18 May 16, 2011 FUNCTIONAL DIAGRAM LED Output ON H OFF Tr. 1 ON OFF Tr. 2 OFF ON L Input H L (Tr. 2) (Tr. 1) SHIELD MARKING EXAMPLE 9305 R N131 1N 31 No. 1 pin Mark Year Assembled (Last 1 Digit) Rank Code Week Assembled Assembly Lot Type Number An Initial of "Renesas" <R>

R08DS0013EJ0100 Rev.1.00 Page 4 of 18 May 16, 2011

ORDERING INFORMATION

Part Number Order Number Solder Plating Specification Packing Style Safety Standard Approval Application Part Number* PS9305L PS9305L-AX Pb-Free 20 pcs (Tape 20 pcs cut) Standard products PS9305L PS9305L-E3 PS9305L-E3-AX (Ni/Pd/Au) Embossed Ta pe 2 000 pcs/reel (UL, CSA approved) PS9305L-V PS9305L-V-AX 20 pcs (Tape 20 pcs cut) DIN EN60747-5-2 PS9305L-V-E3 PS9305L-V-E3-AX Embossed Tape 2 000 pcs/reel (VDE0884 Part2) Approved (Option) *1 For the application of the Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Parameter Symbol Ratings Unit Diode Forward Current I F 25 mA Peak Transient Forward Current (Pulse Width < 1 μs) IF (TRAN) 1.0 A Reverse Voltage V R 5 V Power Dissipation P D 45 mW Detector High Level Peak Output Current IOH (PEAK) 2.5 A Low Level Peak Output Current IOL (PEAK) 2.5 A Supply Voltage (V CC - VEE) 0 to 35 V Output Voltage V O 0 to V CC V Power Dissipation P C 250 mW Isolation Voltage BV 5 000 Vr.m.s. Operating Frequency f 50 kHz Operating Ambient Temperature T A −40 to +110 °C Storage Temperature T stg −55 to +125 °C *1 Reduced to 0.88 mW/ °C at TA = 85°C or more. *2 Maximum pulse width = 10 μs, Maximum duty cycle = 0.2% *3 Reduced to 7.36 mW/ °C at TA = 85°C or more. *4 AC voltage for 1 minute at T A = 25°C, RH = 60% between input and output. Pins 1-4 shorted together, 5-8 shorted together. *5 I OH (PEAK) ≤ 2.0 A (≤ 0.3 μs), IOL (PEAK) ≤ 2.0 A (≤ 0.3 μs) RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage (V CC - VEE) 15 30 V Forward Current (ON) I F (ON) 7 10 16 mA Forward Voltage (OFF) V F (OFF) −2 0.8 V Operating Ambient Temperature T A −40 110 °C <R> <R> <R>

R08DS0013EJ0100 Rev.1.00 Page 5 of 18 May 16, 2011

ELECTRICAL CHARACTERISTICS

(VEE = GND, unless otherwise specified and refer to RECOMMENDED OPERATING CONDITIONS) Parameter Symbol Conditions MIN. TYP. MAX. Unit Diode Forward Voltage V F I F = 10 mA, TA = 25°C 1.2 1.56 1.8 V Reverse Current I R V R = 3 V, TA = 25°C 10 μA Terminal Capacitance C t f = 1 MHz, V F = 0 V, TA = 25°C 30 pF Detector High Level Output Current I OH V O = (VCC − 4 V) 0.5 2.0 A V O = (VCC − 15 V) 2.0 Low Level Output Current I OL V O = (VEE + 2.5 V) 0.5 2.0 A V O = (VEE + 15 V) 2.0 High Level Output Voltage V OH I O = −100 mA V CC − 3.0 V CC − 1.5 V Low Level Output Voltage V OL I O = 100 mA 0.1 0.5 V High Level Supply Current I CCH V O = open, IF = 10 mA 1.4 3.0 mA Low Level Supply Current I CCL V O = open, VF = 0 to +0.8 V 1.3 3.0 mA UVLO Threshold V UVLO+ V O > 5 V, IF = 10 mA 10.8 12.3 13.4 V V UVLO− 9.5 11.0 12.5 UVLO Hysteresis UVLO HYS V O > 5 V, IF = 10 mA 0.4 1.3 V Coupled Threshold Input Current (L → H) IFLH I O = 0 mA, VO > 5 V 2.0 5.0 mA Threshold Input Voltage (H → L) VFHL I O = 0 mA, VO < 5 V 0.8 V *1 Typical values at T A = 25°C. *2 Maximum pulse width = 50 μs, Maximum duty cycle = 0.5%. *3 Maximum pulse width = 10 μs, Maximum duty cycle = 0.2% *4 V OH is measured with the DC load current in this testing (Maximum pulse width = 2 ms, Maximum duty cycle = 20%). <R> <R>

R08DS0013EJ0100 Rev.1.00 Page 6 of 18 May 16, 2011 SWITCHING CHARACTERISTICS (VEE = GND, unless otherwise specified and refer to RECOMMENDED OPERATING CONDITIONS) Parameter Symbol Conditions MIN. TYP. MAX. Unit Propagation Delay Time (L → H) t PLH R g = 10 Ω, Cg = 10 nF, f = 10 kHz, 0.18 0.25 μs Propagation Delay Time (H → L) t PHL Duty Cycle = 50% , IF = 10 mA 0.18 0.25 μs Pulse Width Distortion (PWD) |t PHL−tPLH| 0.02 0.1 μs Propagation Delay Time (Difference Between Any Two Products) tPHL−tPLH −0.1 0.1 μs Rise Time t r 50 ns Fall Time t f 50 ns UVLO (Turn On Delay) t UVLO ON V O > 5 V, IF = 10 mA 0.8 μs UVLO (Turn Off Delay) t UVLO OFF V O < 5 V, IF = 10 mA 0.6 μs Common Mode Transient Immunity at High Level Output |CM H| T A = 25°C, IF = 10 mA, VCC = 30 V, VO (MIN.) = 26 V, VCM = 1.5 kV 25 kV/ μs Common Mode Transient Immunity at Low Level Output |CM L| T A = 25°C, IF = 0 mA, VCC = 30 V, VO (MAX.) = 1 V, VCM = 1.5 kV 25 kV/ μs *1 Typical values at T A = 25°C. *2 This load condition is equivalent to the IGBT load at 1 200 V/75 A. <R>

R08DS0013EJ0100 Rev.1.00 Page 7 of 18 May 16, 2011 TEST CIRCUIT Fig. 1 IOH Test Circuit Fig. 2 I OL Test Circuit Fig. 3 VOH Test Circuit Fig. 4 V OL Test Circuit Fig. 5 IFLH Test Circuit Fig. 6 UVLO Test Circuit VCC = 15 to 30 V 2.5 V 0.1 Fμ IOL IF VCC = 15 to 30 V 0.1 Fμ VO > 5 V IF = 10 mA VCC 0.1 Fμ VO > 5 V IF = 7 to 16 mA VCC = 15 to 30 V 0.1 Fμ VOH 100 mA VCC = 15 to 30 V 4 V 0.1 Fμ IF = 7 to 16 mA

5 IOH

VCC = 15 to 30 V 0.1 Fμ VOL 100 mA SHIELD SHIELD SHIELD SHIELD SHIELD SHIELD <R>

R08DS0013EJ0100 Rev.1.00 Page 8 of 18 May 16, 2011 VCC = 15 to 30 VIF = 10 mA 10 kHz 50% DUTY CYCLE 0.1 Fμ VO 500 Ω 10 Ω 10 nF tPHLtPLH IF VOUT 90% 50% 10% tr tf VCC = 30 V VCM = 1.5 kV 0.1 Fμ A B 2 VO IF VOH 26 V 1 V VOL VCM 0 V VO (Switch A: IF = 10 mA) VO (Switch B: IF = 0 mA) Fig. 7 tPLH, tPHL, tr, tf Test Circuit and Wave Forms Fig. 8 CMR Test Circuit and Wave Forms Δt =δ V δ t VCM Δt SHIELD SHIELD

R08DS0013EJ0100 Rev.1.00 Page 9 of 18 May 16, 2011 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) Ambient Temperature TA (°C) Diode Power Dissipation PD (mW) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Ambient Temperature TA (°C) Detector Power Dissipation PC (mW) DETECTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Ambient Temperature TA (°C) Threshold Input Current IFLH (mA) THRESHOLD INPUT CURRENT vs. AMBIENT TEMPERATURE 20 40 60 80 120 1000 20 40 60 80 120 1000 300 250 200 150 100 5.0 4.0 3.0 2.0 1.0 VCC = 30 V, VEE = GND, VO > 5 V VCC = 30 V, VEE = GND −40 −2 00 2 04 06 08 0 100 Forward Current IF (mA) Output Voltage VO (V) OUTPUT VOLTAGE vs. FORWARD CURRENT 102 4 35 Forward Voltage VF (V) Forward Current IF (mA) FORWARD CURRENT vs. FORWARD VOLTAGE 1.0 0.01 0.1 1.0 100 TA = +100°C +85°C +50°C +25°C 0°C −40°C High Level Output Voltage – Supply Voltage VOH – VCC (V) High Level Output Current IOH (A) HIGH LEVEL OUTPUT VOLTAGE – SUPPLY VOLTAGE vs. HIGH LEVEL OUTPUT CURRENT VCC = 30 V, VEE = GND, IF = 10 mA−40°C +25°C TA = +110°C Remark The graphs indicate nominal characteristics. <R>

R08DS0013EJ0100 Rev.1.00 Page 10 of 18 May 16, 2011 Forward Current IF (mA) PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. FORWARD CURRENT PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. SUPPLY VOLTAGE Supply Voltage VCC (V) Low Level Output Current IOL (A) Low Level Output Voltage VOL (V) LOW LEVEL OUTPUT VOLTAGE vs. LOW LEVEL OUTPUT CURRENT Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL – tPLH (ns) Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL – tPLH (ns) Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL – tPLH (ns) 6 8 10 12 14 16 18 VCC = 30 V, VEE = GND, Rg = 10 Ω, Cg = 10 nF, f = 10 kHz, Duty cycle = 50% 250 200 150 100 tPHL PWD tPLH 15 20 25 30 VEE = GND, IF = 10 mA, Rg = 10 Ω, Cg = 10 nF, f = 10 kHz, Duty cycle = 50% 250 200 150 100 t PHL PWD tPLH PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. LOAD CAPACITANCE Load Capacitance Cg (nF) 10 20 30 40 50 VCC = 30 V, VEE = GND, IF = 10 mA, Rg = 10 Ω, f = 10 kHz, Duty cycle = 50% 250 200 150 100 t PHL tPLH PWD 0 0.5 1 1.5 2.5 2 VCC = 30 V, VEE = GND, IF = 0 mA −40°C +25°C TA = +110°C PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. LOAD RESISTANCE 0 1 02 03 04 05 0 VCC = 30 V, VEE = GND, IF = 10 mA, Cg = 10 nF, f = 10 kHz, Duty cycle = 50% 250 200 150 100 tPHL PWD tPLH Load Resistance Rg (Ω) Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL – tPLH (ns) Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL – tPLH (ns) PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. AMBIENT TEMPERATURE Ambient Temperature TA (°C) 0−40 −20 20 40 60 80 VCC = 30 V, VEE = GND, IF = 10 mA, Rg = 10 Ω, Cg = 10 nF, f = 10 kHz, Duty cycle = 50% 250 200 150 100 t PHL tPLH 100 PWD Remark The graphs indicate nominal characteristics.

R08DS0013EJ0100 Rev.1.00 Page 11 of 18 May 16, 2011 Ambient Temperature TA (°C) SUPPLY CURRENT vs. AMBIENT TEMPERATURE High Level Supply Current ICCH (mA), Low Level Supply Current ICCL (mA) 20 0 20 40 80 60−40 2.0 1.5 1.0 0.5 100 VCC = 30 V, VEE = GND, VO = OPEN ICCH (IF = 10 mA) ICCL (IF = 0 mA) Ambient Temperature TA (°C) Supply Voltage VCC (V) SUPPLY CURRENT vs. SUPPLY VOLTAGE High Level Supply Current ICCH (mA), Low Level Supply Current ICCL (mA) 15 20 30 25 2.0 0.5 1.0 1.5 VEE = GND, VO = OPEN ICCH (IF = 10 mA) ICCL (IF = 0 mA) High Level Output Voltage – Supply Voltage VOH – VCC (V) HIGH LEVEL OUTPUT VOLTAGE – SUPPLY VOLTAGE vs. AMBIENT TEMPERATURE −20 0 20 40 80 60−40 0.0 −3.0 −2.5 −2.0 −1.5 −1.0 −0.5 100 −20 0 20 40 80 60−40 100 VCC = 30 V, VEE = GND, IF = 10 mA, IO = –100 mA Ambient Temperature TA (°C) High Level Output Current IOH (A) HIGH LEVEL OUTPUT CURRENT vs. AMBIENT TEMPERATURE Ambient Temperature TA (°C) Low Level Output Voltage VOL (V) LOW LEVEL OUTPUT VOLTAGE vs. AMBIENT TEMPERATURE 0.30 0.00 0.05 0.10 0.15 0.20 0.25 V CC = 30 V, VEE = GND, IF = 10 mA, IO = 100 mA Ambient Temperature TA (°C) Low Level Output Current IOL (A) LOW LEVEL OUTPUT CURRENT vs. AMBIENT TEMPERATURE −20 0 20 40 80 60−40 100 3.0 0.0 0.5 1.0 1.5 2.0 2.5 V CC = 30 V, VEE = GND, IF = 10 mA, VCC–VO = 4 V −20 0 20 40 80 60−40 100 3.0 0.0 0.5 1.0 1.5 2.0 2.5 V CC = 30 V, VEE = GND, IF = 10 mA, VO = 2.5 V Remark The graphs indicate nominal characteristics.

R08DS0013EJ0100 Rev.1.00 Page 12 of 18 May 16, 2011 OUTPUT VOLTAGE vs. SUPPLY VOLTAGE Supply Voltage VCC – VEE (V) Output Voltage VO (V) 0 5 10 15 20 UVLOHYS VUVLO+VUVLO− (12.3 V)(11.0 V) Remark The graph indicates nominal characteristics.

R08DS0013EJ0100 Rev.1.00 Page 13 of 18 May 16, 2011 TAPING SPECIFICATIONS (UNIT: mm) PS9305L-E3 330±2.0 100±1.0 2.0±0.5 13.0±0.2 R 1.0 21.0±0.8 2.0±0.5 17.5±1.0 21.5±1.0 2.0±0.1 4.0±0.1 6.35±0.1 8.0±0.1 1.5 +0.1 1.75±0.1 4.5 MAX. 7.5±0.1 10.2±0.1 16.0±0.3 0.35 1.5 +0.1 4.05±0.1 Outline and Dimensions (Tape) Tape Direction Outline and Dimensions (Reel) Packing: 2 000 pcs/reel 15.9 to 19.4 Outer edge of flange <R>

R08DS0013EJ0100 Rev.1.00 Page 14 of 18 May 16, 2011 RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm) Part Number PS9305L Lead Bending A lead bending type (Gull-wing) for surface mount 9.2 B 1.27 C 0.8 D 2.2 D CB A <R>

R08DS0013EJ0100 Rev.1.00 Page 15 of 18 May 16, 2011 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering  Peak reflow temperature 260 °C or below (package surface temperature)  Time of peak reflow temperature 10 seconds or less  Time of temperature higher than 220°C 60 seconds or less  Time to preheat temperature from 120 to 180°C 120 ±30 s  Number of reflows Three  Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) 120±30 s (preheating) 220°C 180°C Package Surface Temperature T (°C) Time (s) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s to 60 s 260°C MAX. 120°C (2) Wave soldering  Temperature 260 °C or below (molten solder temperature)  Time 10 seconds or less  Preheating conditions 120 °C or below (package surface temperature)  Number of times One (Allowed to be dipped in solder including plastic mold portion.)  Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by Soldering Iron  Peak Temperature (lead part temperature) 350 °C or below  Time (each pins) 3 seconds or less  Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead <R>

R08DS0013EJ0100 Rev.1.00 Page 16 of 18 May 16, 2011 (4) Cautions  Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. USAGE CAUTIONS 1. This product is weak for static elec tricity by designed with high-speed integr ated circuit so protect against static electricity when handling. 2. Board designing (1) By-pass capacitor of more than 0.1 μF is used between V CC and GND near device. Also, ensure that the distance between the leads of the photocoupler and capacitor is no more than 10 mm. (2) In older to avoid malfunctions and characteristics degr adation, IGBT collector or emitter traces should not be closed to the LED input. (3) Pin 4 (which is an NC pin) can either be connected directly to the GND pin on the LED side or left open. Unconnected pins should not be used as a bypass for signals or for any other similar purpose because this may degrade the internal noise environment of the device. *1 NC: Non-Connection (No Connection) 3. Make sure the rise/fall time of the forward current is 0.5 μs or less. 4. In order to avoid malfunctions, make sure the rise/fall slope of the supply voltage is 3 V/ μs or less. 5. Avoid storage at a high temp erature and high humidity.

R08DS0013EJ0100 Rev.1.00 Page 17 of 18 May 16, 2011 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT Parameter Symbol Spec. Unit Climatic test class (IEC 60068-1/DIN EN 60068-1) 40/110/21 Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) Upr = 1.5 × UIORM, Pd < 5 pC UIORM Upr 1 130 1 695 Vpeak Vpeak Test voltage (partial discharge test, procedure b for all devices) Upr = 1.875 × UIORM, Pd < 5 pC Upr 2 119 V peak Highest permissible overvoltage U TR 8 000 V peak Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) 2 Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) CTI 175 Material group (DIN EN 60664-1 VDE0110 Part 1) III a Storage temperature range T stg –55 to +125 °C Operating temperature range T A –40 to +110 °C Isolation resistance, minimum value VIO = 500 V dc at TA = 25°C VIO = 500 V dc at TA MAX. at least 100°C Ris MIN. Ris MIN. Ω Ω Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = Tsi Tsi Isi Psi Ris MIN. 175 400 700 mA mW Ω <R>

R08DS0013EJ0100 Rev.1.00 Page 18 of 18 May 16, 2011 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points.  Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal.  Do not burn, destroy, cut, crush, or chemically dissolve the product.  Do not lick the product or in any way allow it to enter the mouth.

All trademarks and registered trademarks are the property of their respective owners. C - 1 Rev. Date Page Summary

0.01 May 12, 2010 − First Edition issued

1.00 May 16, 2011 Throughout Prelimi nary Data Sheet -> Data Sheet

Throughout Safety standards approved p.3 Modification of MARKING EXAMPLE p.4 Addition of ORDERING INFORMATION p.4 Modification of ABSOLUTE MAXIMUM RATINGS p.5 Modification of ELECTRICAL CHARACTERISTICS ICCH, ICCL p.6 Modification of SWITCHING CHARACTERISTICS |tPHL−tPLH| pp.7, 8 Addition of TEST CIRCUIT pp.9 to 12 Addition of TYPICAL CHARACTERISTICS p.13 Addition of TAPING SPECIFICATIONS p.14 Addition of RECOMMENDED MOUNT PAD DIMENSIONS pp.15, 16 Addition of NOTES ON HANDLING p.17 Addition of SPECIFICATION OF VDE MARKS LICENSE DOCUMENT

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