PRF134 POLYFET | Alldatasheet
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6.0 1.0 9.0 10.00 C/W 0.2 1.20 0.2 3.50 1.00 0.8 0.02 PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS Common Source Power Gain Drain Efficiency Total Device Dissipation Junction to Case Thermal Resistance Maximum Junction Temperature Storage Temperature DC Drain Current Drain to Source Voltage Gate to Source Voltage -65 C to 150 C 200 C A V Load Mismatch Tolerance VSWR Drain to Gate Voltage 20:1 Relative 0.20 0.01 Ids = A, Vgs = 0V V, Vgs = 0V Ciss Crss Coss Idq = A, Vds = V, F = 0.20 Bvdss Idss Drain Breakdown Voltage V mA pF pF pF Common Source Output Capacitance Common Source Feedback Capacitance Idq = Idq = 0.20 400 Vgs = 20V, Ids = Rdson Saturation Resistance Forward Transconductance gM Vds = 10V, Vgs = 5V POLYFET RF DEVICES 400 400 Common Source Input Capacitance 30V Igss Vgs Idsat Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Saturation Current uA V Mho Ohm Amp PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ELECTRICAL CHARACTERISTICS ( EACH SIDE ) RF CHARACTERISTICS ( WATTS OUTPUT ) 5.0 ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Gps 28.0 A, Vds = V, F = A, Vds = V, F = 28.0 28.0 Watts V MHz MHz MHz Watts Package Style 5.0 Vds = 0V Vgs = 30V Vgs = 20V, Vds = 10V HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE General Description 28.0 Vds = A, Vgs = Vds Ids = A C SILICON GATE ENHANCEMENT MODE PATENTED GOLD METALIZED η dB o o o o o Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F enhance broadbad performance TM t RF POWER TRANSISTOR VDMOS Vds = 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com Vgs = 0V, F = 1 MHz 28.0 REVISION 08/01/1997 Vds = Vgs = 0V, F = 1 MHz 28.0 Vds = Vgs = 0V, F = 1 MHz 28.0