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THOHG\\QH0LFURZDYH6ROXWLRQV )$; Specifications subject to change without notice. PHT-64020B Technical Data PHT-64020B Suggested Maximum Ratings Parameter Suggested Maximum [1] Emitter-Base Voltage 2.0V Collector-Base Voltage 40V Collector-Emitter Voltage 20V Collector Current 200mA Junction Temperature +200°C Storage Temperature -65 to +200°C NOTE: 1. Permanent damage may occur if any of these limits are exceeded Up to 6 GHz Linear Power Silicon Bipolar Transistor PHT-64020B
Description
The PHT-64020B is a high performance NPN bipolar transistor. The PHT-64020B is housed in a hermetic 200 mil BeO disk package. It is designed for use in medium power, wide band amplifier and oscillator applications. TMS is not the original device manufacturer. TMS procures commercial off the shelf product and UpScreens per the following process flow. For custom screening requirements, Quality Conformance Inspection, or additional electrical selection, please contact TMS. 200 mil BeO Package Dimensions
THOHG\\QH0LFURZDYH6ROXWLRQV )$; Specifications subject to change without notice. PHT-64020B Electrical Specifications [1] -55°C +25°C +150°C Symbol Parameters and Test Conditions Units Min Max Min Max Min Max P1dB Power Output @ 1 dB Gain Compression VCE = 16V, Ic = 110 mA, f = 2.0 GHz dBm 26.0 G1dB 1 dB Compression Gain VCE = 16V, Ic = 110 mA, f = 2.0 GHz dB 8.5 hFE ICBO IEBO Forward Current Transfer Ratio; V CE = 8 V, IC = 110mA Collector Cutoff Current; V CE = 16 Emitter Cutoff Current; V EB = 1 V µA µA 15 20 200 100 5.0 1000 NOTE: 1. ηT = (RF Output Power) / (RF Input Power + VCEIC). TMS UpScreen Table 1A 100% Screening Screening Test/Operation MIL-STD-750 Method Conditions Temperature Cycling 1051 Condition C, Ta = -55 °C to 175 °C 20 cycles minimum Constant Acceleration 2006 20,000G, Y1 axis only, 1 min. hold does not apply High Temp. Reverse Bias (HTRB) 1039 Condition A, t= 48 hrs., Ta = +150 °C VCB= 80% of rated BVCBO Power Burn-in 1039 Condition B, t= 160 hrs., Ta = +25°C, Tj = +150°C Final Electrical Test Group A, Subgroup 2 ΔICBO = ±50 nA or ±100%, whichever is greater Percent Defective Allowable (PDA) Final Electrical and Deltas Hermeticity - Fine Leak - Gross Leak 1071 1071 Condition H1 Condition C or K External Visual 2071 Group A Inspection Subgroup1, Sample 22/0 Subgroup 3, Sample = 116/0 Subgroup 4, Sample = 116/0 Subgroup 5, 6 & 7 are not applicable Subgroup 1, Visual Mechanical Subgroup 3, hFE @ -55°C, ICBO @ +150°C Subgroup 4, P 1dB & G1dB @ +25°C Marking - Dot units near pin 1 (blue) unless directed otherwise Shipment Packaging 10 per strip Marking: Manufacturer’s marking (if applicable) will remain on devices. TMS individual packaging will be labeled with TMS Part Number and manufacturer date code. TMS shipment date code will appear on outer label and C of C. Certificate of Conformance (C of C) will be sent with each shipment. This document provides objective evidence of TMS testing and documents traceability to manufacturers wafer/lot identification.