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Teledyne Microwave Solutions • 650-691-9800 • FAX: 650-962-6845 Specifications subject to change without notice. PHA-1110B Typical Biasing Configuration NOTE: 1. Permanent damage may occur if any of these limits are exceeded. Technical Data PHA-1110B Suggested Maximum Ratings Parameter Suggested Maximum [1] Device Current 90 mA RF Input Power +13 dBm Junction Temperature +200°C Storage Temperature -65 to +200°C Cascadable Silicon Bipolar MMIC Amplifier PHA-1110B
Description
The PHA-1110B is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic gold-ceramic 100 mil microstrip package. Designed for high dynamic range in either 50 or 75 Ω systems. Typical applications include narrow and broadband amplifiers. 100 mil Package Dimensions 0.02 0.040 NOTES: (Unless otherwise specified) 1. Dimensions are in inches 2. Tolerances: X.XXX = ±0.005 0.0350.004 ± 0.002 0.070 0.495 ± 0.030 Gnd RF in RF Out Gnd OUIN C blockC block Vd = 5 V Vcc > 7 V R bias RFC (Optional) TMS is not the original device manufacturer. TMS procures commercial off the shelf product and UpScreens per the following process flow. For custom screening requirements, Quality Conformance Inspection, or additional electrical selection, please contact TMS
Teledyne Microwave Solutions • 650-691-9800 • FAX: 650-962-6845 Specifications subject to change without notice. HA-1110B Electrical Specifications [1] -55°C +25°C +125°C Symbol Parameters and Test Conditions Units Min Max Min Max Min Max P1dB Output Power at 1 dB Compression f = 1000 MHz dBm 16.0 Vd Device Voltage @ 60 mA V 4.5 6.5 NOTE: 1. The recommended operating current range for this device is 40 mA to 75 mA. TMS UpScreen Table 1A 100% Screening Screening Test/Operation MIL-STD-883 Method Conditions Stabilization Bake 1008 Condition C, Ta = +150°C t = 24 hrs. Temperature Cycling 1010 Condition C, Ta = -65 °C to 150 °C 20 cycles minimum Constant Acceleration 2001 30,000G, Y1 axis only, 1 min. hold does not apply Pre-Burn-in Electrical Test (optional) +25°C; G, ΔGp and Vd Burn-in 1015 Condition B, t= 160 hrs., Ta = +125°C, Percent Defective Allowable (PDA) Final Electrical Test Hermeticity - Fine Leak - Gross Leak 1014 1014 Condition A Condition C External Visual 2009 Group A Inspection +125°C - 55°C ΔGp and Vd G, ΔGp and Vd Shipment Packaging 10 per strip Marking: Manufacturer’s marking (if applicable) will remain on devices. TMS individual packaging will be labeled with TMS Part Number and manufacturer date code. TMS shipment date code will appear on outer label and C of C. Certificate of Conformance (C of C) will be sent with each shipment. This document provides objective evidence of TMS testing and documents traceability to manufacturers wafer/lot identification.