OPR5500 OPTEK | Alldatasheet
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Product Bulletin OPR5500 SP oe August 1996 Surface Mount Phototransistor COLLECTOR CONTACT ~\\ .020 RAD .031(.79) (51) OPC200L -118(3.0 BASE CONTACT L EMITTER | CONTACT | l | t .039(1.0) TOLERANCE IS + .005(+ .13) Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) The OPR5500 is an NPN silicon Normalized Collector Current vs. Normalized Output phototransistor in a high temperature Angular Displacement vs. Frequency polyimide chip carrier. It's small size is 1 10 ey well suited to applications requiring close se | A TNT SN OKT 2 - Re = 10K channel spacing. Itcan be placed with at TT TN 4H any standard SMD equipment and can LETAT TT [| . { —| be reflow soldered by virtually any d L |] ae = xT 1 == 1K conventional means. Wrap around [| PT TY i é yA contacts enable the part to be mounted rrTTfne gos \\7 face up or on edge for beam detection al PrPree yyy 2 I\\ OKT 1 = Ry» 10K parallel to the seating plane. In He HEE EAR i. 2 Y\\ combination with the OPR5200, the 2} | KA I miniature SMD LED, this lateral SaSGeeen i. MS mounting option can be used to create a Lift | Tt | ° nas DH slotted switch configuration. TBONTS SOAS “915 1S O45 0078 90 1 10 100 1,000 10.000
6 Angular Displacement FREQUENCY ~ Kite
Electrical Characteristics (Ta = 25° C unless otherwise noted) SYMBOL | PARAMETER [win | typ [Max UNITS TEST CONDITIONS Icjow) On State Collector Current | 36 Vor = 5 V, Ee = 150 uWiem? (890 nm light - | | source) Iceo__|Dark Current | Vor=5V, Ee=0 Vieryceo |Collector-Emitter Breakdown Voltage | 30 ; || v Ic = 100 pA V(BR)ECO |Emitter-Collector Breakdown Voltage 5 fo} flv | le=100 pA | VcE(SAT) | Saturation Voltage | | fos] v | Ic = 100 pA, Ee=5 mW/cm? [tattle Time, Fall Tine ec ee ee Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 9-28