OP169SL OPTEK | Alldatasheet
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OPTEK TECHNOLOGY INC QbE D | 6794580 GOOOLL4Y & I Optoelectronics Division al aaw TAW Electronic Components Group T-4 \\-}) 7 7try Product Buletn 6064 January 1965 GaAs Plastic Infrared Emitting Diodes : Types OP169SL, OP169SLD, OP169SLC woe a . “ae tameoe Jay a This my mi lL sgn Li Ls ORISOS MEHCHES MLMETES— oo yy fou uns Tyg ae [agen | Ua "FOR WIENTIFICATION PURPOSES, ANODE LEAD IS .080(1.62) NOM. LONGER THAN CATHODE LEAD. Features Absolute Maximum Ratings (Ta-25°C un'ess othorwise noted) © Integral les for narow beam angle Continuous Forward Curent... ssessesssesscsseseeseceseceeseeseeeseeeeceeees SOMA Description Notes: Tho OPIGRL sie a glum ead inired 1} BA Res eenande Dui an etl 0s ms, en ow aig smiting diodes molded in “end-emiting” minature . clear peckages, Tho mod on insures improved RAE ue obra a ol nf 0 69-TS en bes Egan 28 uniformity of lens magnification from unit to unit. measurement ofthe averaga radiant intensity within the cone formed by the above conditions. Eglapr) i aot nacessaiy The OP69SL series provides « broad range of on- erm within he manned er, line and radiant intensies and has considerable design flexibility due to its small size, These ‘Typical Performance Curves devices are machanically and spectrally matched Percent Changes in Radiant Intonsity Coupling Characteristics to tho OP60G serias of photoansistors. Far va Time of OP189SL and OP5O8 acitioal information on spectral emission . charactors, please refer to the OPEOQ data COO Tl 7 thet ‘RESET a - PSS Pe Ce oe LN mall "CCRT ott TTT TTT Ty y Biic VCC CCe ree
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OPTEK TECHNOLOGY INC ObE D Poersssec Oooo11s 8 | : oe mye] Types OP169SL, OP169SLD, OP169SLC T-A\\-11 a Electrical Charactaristics (TA = 25°C unless otherwisa noted) | Po | Rediant Power Our Pease || 020 | | mW [ig=20mA . aw BE] («Ee ‘OPIS9SLD | 0.116 ‘mWicm? | IF==20 mA OPISSSLC | 0.195 ‘mem? | If = 20 mA [rp |Wavelongih at Peak Embsion | S| 90 PT nm [ir=20mA |e | sperel arid Soween Hal Powe Poms [| [| mm [mama re pecan | Typical Performance Curves Forward Voltage vs Forward Voltage and Radiant Incidence Forward Voltage vs Forward Current va Forward Current Ambient Temperature Te foie Ll". Tea aoa ld 2 dl coe a LU 3 : H S.COILUTIT te oeco ET COMTI «= bere bee rr TTL TT 1,VEPe.? + PPS = “Pemierioo AR EE_ JHEEFH OF 10 0 100 © 2 of C6 08 18 ony oe o 6 1 ys cama nia attr ap ser arent Rise Time and Fall Time vs Relative Radiant Intensity and Wavelength Relative Radiant Intensity vs Forward Current at Peak Emission vs Ambient Temperature Angular Displacement A ‘ ", “TTT TTT Ke teee) AA, os i ats “ee LL IA I 2 (DMP TTT) eee | PEASBKEHH OL. LETT TT WOPSerr] 7. tN Es a —— oe Fg oe a PT ba Phathel TISNY OLA i wemoran [| | EE, “CPP ERs TT! SLY T IN | . we = Sad 0-5 0 Ss wm Hw Cp ar me eae fo 00 hater Can 1s ac ‘TAW reserves the right to make changes at eny time in order to improve design and to supply the best product possible. ‘Tptoclectronics Division, TRW Electronic Components Group, 216 W. Crosby Ad., Carrollton, FR vous 1214) 325-2200, TX 6716080 or 216640 © TRW Inc. 1985, 1984. TAW is the name and mark af TRW Inc. Printed in USA.