OP168F OPTEK | Alldatasheet

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OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 3 23-2396 sensors@optekinc.com www.optekinc.com Issue A 06/07 Page 1 of 6 Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series Description: Each diode in this series is molded into an end-looking plastic package. The package for all OP168F and OP268F devices is black, whereas the package for all OP169 and OP269 packages is clear. OP168F and OP169 devices are GaAs. OP268F and OP269 devices are GaAIAs. The OP268FPS is an 850nm gallium aluminum arsenide infrared emitting diode molded in a end-looking miniature plastic package. The advantage of this emitter is that it emits photons from a 0.004” area that is aligned with the package optical centerline. Unlike other GaAlAs emitters, this device performs more like an ideal point source and is suitable for use with lenses to create collimated light sources that can be used in a variety of applications. Due to their small size, all diodes in this series offer considerable design flexibility. The OP168F and OP268F series are mechanically and spectrally matched to the OP508F series phototransistor and the OP538F series photodarlingtons. The OP169 and OP269 series are mechanically and spectrally matched to the OP509 series phototransistors. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data. For custom screening contact your OPTEK representative. Features:

  • Flat lens for wide radiation angle (OP168, OP268)
  • Integral lens for narrow beam angle (OP169, OP269)
  • Easily stackable on 0.100” (2.54 mm) hole centers
  • Mechanically and spectrally matched to other OPTEK devices Applications:
  • Space-limited applications
  • Excellent design flexibility
  • PCBoard mounted slotted switch
  • PCBoard interrupter

Ordering Information

935 nm 104° 0.50" OP168FB OP168FC OP169A 935 nm 18° OP169B OP169C OP268FA 890 nm OP268FB OP268FC OP268FPS 850 nm 50° OP269A 890 nm 18” OP269B OP269C 104° OP168 OP268 OP169 OP269 RoHS

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 3 23-2396 sensors@optekinc.com www.optekinc.com Issue A 06/07 Page 2 of 6 Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series OP169 (A, B, C), OP269 (A, B, C) OP168F (A, B, C), OP268F (A, B, C, PS) Pin # LED X=0.060” (1.5 mm)

1 Anode

2 Cathode

Pin # LED X=0.060” (1.5 mm) [MILLIMETERS]DIMENSIONS ARE IN: INCHES [MILLIMETERS]DIMENSIONS ARE IN:

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 3 23-2396 sensors@optekinc.com www.optekinc.com Issue A 06/07 Page 3 of 6 Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series Absolute Maximum Ratings (TA=25°C unless otherwise noted) Storage and Operating Temperature Range -40 o C to +100o C Reverse Voltage 2.0 V Continuous Forward Current 50 mA Peak Forward Current (1 μs pulse width, 300 pps) OP168, OP169, OP268, OP269 (A, B, C) OP268FPS 3.0 A 100 mA Lead Soldering Temperature 1/16 inch (1.6 mm) from case for 5 seconds with soldering iron 260° C Power Dissipation(2) 100 mW Notes: 1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum of 20 grams force may be applied to the leads when soldering. 2. Derate linearly 1.33 mW/° C above 25° C. 3. For OP168 (FA, FB, FC) and OP268 (FA, FB, FC), E E(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.081” (2.06 mm) in diameter perpendicular to and centered on the mechanical axis of the lens and 0.400” (10.16 mm) from the measurement surface. For OP169 (A, B, C) and OP269 (A, B, C), EE(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.180” (4.57 mm) in diameter perpendicular to and centered on the mechanical axis of the lens and 0.653” (16.6 mm) from the lens tip. NOTE: EE(APT) is a measurement of the average radiant intensity within the cone formed by the above conditions. EE(APT) is not necessarily uniform within the measured area. Electrical Characteristics (TA = 25°C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode EE (APT) (3) Apertured Radiant Incidence OP168FA OP168FB OP168FC OP169A OP169B OP169C OP268FA OP268FB OP268FC OP268FPS OP269A OP269B OP269C 0.48 0.43 0.27 0.18 0.11 0.03 0.64 0.45 0.36 0.10 0.58 0.42 0.34 0.73 0.22 0.99 0.90 0.82 mW/cm2 IF = 20 mA Aperture = .081” dia. Distance = .400” from tip of lens to aperture surface VF Forward Voltage OP168, OP169 OP268, OP269 OP268FPS 1.40 1.50 1.80 V I F = 20 mA IR Reverse Current OP168, OP169, OP268, OP269 OP268FPS 100 µA V R= 2.0 V λP Wavelength at Peak Emission OP168, OP169 OP268, OP269 OP268FPS 935 890 850 nm I F = 20 mA

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 3 23-2396 sensors@optekinc.com www.optekinc.com Issue A 06/07 Page 4 of 6 Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series Electrical Characteristics (TA = 25°C unless otherwise noted — for reference only) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode B Spectral Bandwidth between Half Power Points OP168, OP169, OP268FPS OP268, OP269 nm I F = 10 mA ∆λP /∆T Spectral Shift with Temperature OP168, OP169, OP268, OP269 ±0.30 ±0.18 nm/°C I F = Constant θHP Emission Angle at Half Power Points OP168 OP169 OP268 OP268FPS OP269 104° 46° 104° 50° 46° Degree I F = 20 mA tr Rise Time OP168, OP169 OP268, OP269 OP268FPS 1000 500 ns I F(PK)=100 mA, PW=10 µs, D.C.=10% tf Fall Time OP168, OP169 OP268, OP269 OP268FPS 500 250 ns IF(PK)=100 mA, PW=10 µs, D.C.=10% Relative Radiant Intensity vs. Angular Displacement 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -20 -15 -10 -5 0 5 10 15 20 Angular Displacement (Degrees) Relative Radiant Intensity Beam Angle OP268FA - OP268FC 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 -80 -60 -40 -20 0 20 40 60 80 Angle (Degrees) Amplitude Beam Angle OP168 & OP268 Package Beam Angle OP169 & OP269 Package

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 3 23-2396 sensors@optekinc.com www.optekinc.com Issue A 06/07 Page 5 of 6 Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series OP168 (FA, FB, FC), OP169 (A, B, C) Distance vs Output Power vs Forward Current Distance (inches) Normalized Output Power 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 80 mA 100 mA Normalized at 0.6" and 50 mA Forward Current Forward Voltage vs Forward Current vs Temperature 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 5 10 15 20 25 30 35 40 45 Forward Current (mA) Typical Forward Voltage (V) -65°C -40°C -20°C +0°C +20°C +40°C +60°C +80°C +100°C +125°C Optical Power vs I F vs Temp 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 5 10 15 20 25 30 35 40 45 50 Forward Current I F (mA) Normalized Optical Power -65°C -40°C -20°C +0°C +20°C +40°C +60°C +80°C +100°C +125°C Normalized at 20 mA and 20 o C

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 3 23-2396 sensors@optekinc.com www.optekinc.com Issue A 06/07 Page 6 of 6 Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series OP268 (FA, FB, FC, FPS), OP269 (A, B, C) Forward Voltage vs Forward Current vs Temperature 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Forward Current (mA) Typical Forward Voltage (V) -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120°C Optical Power vs I F vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Forward Current I F (mA) Normalized Optical Power -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120° C Normalized at 50 mA and 20° C Distance vs Output Power vs Forward Current Distance (inches) Normalized Output Power 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 70 mA 80 mA 90 mA 100 mA Normalized at 1" and 50 m A Forward Current