OP168FA OPTEK | Alldatasheet
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Product Bulletin OP168F oy —— June 1996 eee . =ga: . GaAs Plastic Infrared Emitting Diodes Types OP168FA, OP168FB, OP168FC [vr Ree uames aon tte pee Gea Pee Oe oss (1.65) 130 (3.30) EER SESE LOSS SOURS ieee 165 (4.19) 100 (2.54) fo (1.78) ones ee 025 (0.64) cares | 03 ‘oem Pes ete ed Hed Pema era ‘ois (0.36) °° "* cas (0.60) pcan ie meena eae es Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) to the OP508F series phototransistor — Lead Soldering Temperature [1/16 inch (1.6mm) from case for 5 sec. with soldering and the OPS38F series WON) vec vececssceeseseeceeecceeeeteeeeetseeeestenetensersssss s 260° 0(1) | Notes: Description (1) RMA flux is recommended. Duration can be extended to 10 seconds max. when flow ‘The OP168F seri allium arsenid soldering, Maximum 20 grams force may be applied to the leads when soldering. le ies are galliu ide (2) Derate linearly 1.33 mW/° C above 25°C. infrared emitting diodes molded in “end (3) Eetapr) is a measurement of the average apertured radiant energy incident upon 2 sensing | * mini , area 0.081" (2.06 mm) in diameter perpendicular to and centered on the mechanical axis o rooting lalate back plastic 4 the “emitting surface” and 0.400" (10.16 mm) from the measurement surface. Eaart) is not packages. This device has a wide necessarily uniform within the measured area. radiation angle due to its flat emitting furtace. Smal size a oo eae Typical Performance Curves lead spacing allow considerable design flexibility. Percent Changes in Radiant Intensity Coupling Characteristics of vs. Time OP168F and OPSO8F/OP538F MT TT HT] * Oe = “AT . SS a :” | nam We-5¥ a PRES TT LU "Corser = "rd Tn LTT AT S 1s \\ 2 1 tw CER » EAL | | I welts EEE T HI os vo CNS LTT ; —— 100 « 10K 100k 0 02 04 06 08 10
0 TIME ~ Hows DISTANCE BETWEEN LENS TIPS ~ Inches
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 logy: 2-22
Product Bulletin OP168F oy —— June 1996 eee . =ga: . GaAs Plastic Infrared Emitting Diodes Types OP168FA, OP168FB, OP168FC [vr Ree uames aon tte pee Gea Pee Oe oss (1.65) 130 (3.30) EER SESE LOSS SOURS ieee 165 (4.19) 100 (2.54) fo (1.78) ones ee 025 (0.64) cares | 03 ‘oem Pes ete ed Hed Pema era ‘ois (0.36) °° "* cas (0.60) pcan ie meena eae es Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) to the OP508F series phototransistor — Lead Soldering Temperature [1/16 inch (1.6mm) from case for 5 sec. with soldering and the OPS38F series WON) vec vececssceeseseeceeecceeeeteeeeetseeeestenetensersssss s 260° 0(1) | Notes: Description (1) RMA flux is recommended. Duration can be extended to 10 seconds max. when flow ‘The OP168F seri allium arsenid soldering, Maximum 20 grams force may be applied to the leads when soldering. le ies are galliu ide (2) Derate linearly 1.33 mW/° C above 25°C. infrared emitting diodes molded in “end (3) Eetapr) is a measurement of the average apertured radiant energy incident upon 2 sensing | * mini , area 0.081" (2.06 mm) in diameter perpendicular to and centered on the mechanical axis o rooting lalate back plastic 4 the “emitting surface” and 0.400" (10.16 mm) from the measurement surface. Eaart) is not packages. This device has a wide necessarily uniform within the measured area. radiation angle due to its flat emitting furtace. Smal size a oo eae Typical Performance Curves lead spacing allow considerable design flexibility. Percent Changes in Radiant Intensity Coupling Characteristics of vs. Time OP168F and OPSO8F/OP538F MT TT HT] * Oe = “AT . SS a :” | nam We-5¥ a PRES TT LU "Corser = "rd Tn LTT AT S 1s \\ 2 1 tw CER » EAL | | I welts EEE T HI os vo CNS LTT ; —— 100 « 10K 100k 0 02 04 06 08 10 Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 logy: 2-22