OPR2800 OPTEK | Alldatasheet

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OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 3 23-2396 sensors@optekinc.com www.optekinc.com Issue A.4 1/07 Page 1 of 2 Infrared Light Emitting Diode OPR2800, OPR2800T OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Description: The OPR2800 is a GaAIAs infrared LED mounted in a surface mount chip carrier (SMCC) package with a flat lens window that allows a wide beam angle. The SMCC format has a lower height profile than the PLCC-2 package and mounts in the same footprint. The device is suitable for use in single device or array applications. The OPR2800 is spectrally matched to the OPR5500 phototransistor. Features:

  • High-power GaAIAs
  • Matches PLCC-2 footprint
  • 880 nm wavelength
  • Wide beam angle
  • Wide operating temperature range (-40o C to +100o C) Pin # LED

1 Anode

2 Cathode

Applications:

  • Non-contact position sensing
  • Datum detection RoHS

Ordering Information

OPR2800 880 nm 100° Waffle Pack OPR2800T Tape & Reel

  • Machine automation
  • Optical encoding Anode Indicator

Infrared Light Emitting Diode OPR2800, OPR2800T OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 3 23-2396 sensors@optekinc.com www.optekinc.com Issue A.4 1/07 Page 2 of 2 OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS EE (APT) Apertured Radiant Incidence 0.2 - - mW/cm 2 I F = 20 mA(3) VF Forward Voltage - - 1.50 V I F = 50 mA IR Reverse Current - - 100 µA V R= 2.0 V λP Wavelength at Peak Emission 890 - nm I F = 10 mA θHP Emission Angle at Half Power Points - 100 - Degree I F = 20 mA tr Output Rise Time, Output Fall Time - - 500 ns tf Output Rise Time, Output Fall Time - - 500 ps IF(PK) = 100 mA, PW = 10 µs, D.C. = 10.0% Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. Derate linearly at 1.73 mW/° C above 25° C. 3. EE (APT) is a measurement of the apertured radiant incidence upon a sensing area 0.081” (2.06 mm) in diameter, perpendicular to and centered on the mechanical axis of the lens and 0.590” (14.99 mm) from the measurement surface. EE(APT) is not necessarily uniform within the measured area. Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Storage Temperature Range -40o C to +100o C Operating Temperature Range -40o C to +100o C Reverse Voltage 30 V Continuous Forward Current 50 mA Solder reflow time within 5°C of peak temperature is 20 to 40 seconds(1) 250° C Power Dissipation 130 mW(2) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Forward Current I F (mA) Normalized Optical Power -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120° C Normalized at 50 mA and 20° C Optical Power vs IF vs Temperature 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Forward Current (mA) Typical Forward Voltage (V) -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120°C Forward Voltage vs Forward Current vs Temperature OP2800