OPI2100 OPTEK | Alldatasheet
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OPTEK TECHNOLOGY INC OLE D | 6796580 go00ee2 4 I Optoclectronics Division 1987 Cost Saver Product! ae TW Blctran Components Group Call TRW for more information! TItuy Product Buln 6198. January 1985 T- WES ss . Optically Coupled Isolators Type OPI2100 3798.40), ~ ice @'9'9| TRE Tt Re RS qT an 49° sau Re fata | i ss oo. 4,9 OO — omer wen ese eae ¢ = ‘MOLOED OOT INDICATES PIM 1 NCHES ANLUMETERS | panna 8S : PC ‘e198 er. SS ale ee ee Features Absolute Maximum Ratings (T,=25°C unless otherwise noted © Diet intarface with up to 10 TTL loads Operating Temperature Rang@.<. sesso sssessevssepsssesseeeseesseecsees, 860 (0 #1002 Input Diode The OPI2100 conse of a galium arsenide Pook Forward Curent i us pute, 200 ppS).-vv-ssvvsvvvvsecvvvvevvvssswosesoescc 80 A infrared emiting ide and an NPN sicen Rovere Voage ss. esssseestseesseersssesssriscerieceriene ae y phototransistor mounted in a standard plastic six Power Dissipation... eee eeteeeeceeeorevreeeee eee 100 mwit fin duatinine packoge, This device & designed to Output Transistor sink current Emiter-Colector Voltage .2..000000000 UTI oy Notes: 11) Measured with input diode leads shorted tagether and output leads shorted ‘together, (2) RMA fx is recommended. Duration can be extended to 10 sec. max. when flow soldering, (3) Derate linearly 1.33 mW/°C above 25°C. UW Ova ieaty 20 WP as 26°. ‘Thtoslectronies Division, Taw Frectronie Components. Group, 218 W. Trosby Ra, Carrollton, T6000 TOTAY Soa oN 0, TK ET T6030 or 2 Gr) 138
OPTEK TECHNOLOGY INC ObE D | 6798580 Googdees O i Type OPI2100 T-W-8S ee Electrical Characteristics (T4= 25°C unless otherwisa noted) ra CSymbot | _____Paramoter__—— | Min. [ Typ. [Max.[Units] "Test Conditions Input Diode ~ Out; put Phototransistor | ea |e ake Pa [tre [oe tren Gen Coupled : a A A [toi [0 tran Taner Rato———— ST Litem 8pm [cerca [Seaton otags oT [ice 180A patina Typical Performance Curves he | Diode Forward Currant vs Relative Collector Current vs Normalized Current Transfer Ratio Diode Forward Voltage Ambisnt Temperature vs Time " “rrr | ate LTT 2 POE He sa . z j HbA i. Pasa i TWAT OAR AEBS CCI Soy be ay) ae atitTT Ty : . TOW Cee CUTID ees sas 10 1A a rT a VF = ORWARD OUTAGE = ¥ =a revemnne- pare Collector-Emitter Breakdown Voltage vs Base-Emitter Resistance © N ; EI | - DN “ TT re ae as 0 fog — MUTE ESTE ~ MO TAW reserves the right to make changes at any time in order to improve design and to supply the bast product possible. Plastic color may vary. Optoelectronics Division, FAW Electronic Components Troup, i216 W. Crosby Ta, oi, Tx 75008 1214 ‘§2a-2000, TX B7 16032 or 210049 127