OPI153

OPI150 OPTEK | Alldatasheet

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Product Bulletin OPI150 SP ° ———— July 1996 —————— SSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSssee Types OPI150, OPI153 oS ee as sue oot. icares Z, 89,10 $55 SS : pee Oe OIesES eS ozo (0.51) i” if ie 050 (1.279 eee” Le oe yo (2) ny Loa ° So rea) meee) “TS an {aaa + 400,440.18) f Gg : We ae 1 CATHOOE LEAD, OER LEAOS ARE 080 (1.52) NOK LONGER, / OUENSIONS AME IW CHES (WILLINETERS) UY ' ss mis OMENGION 1s cOWAMLED AT Me HOUSING APACE Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) ° Hermetically sealed LED and Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering photosensor WON]. eee cece eee e eset cette tess tess teeseeeesseesseees 260°C) . Base contact lead for conventional Input Diode D iptio Output Photosensor silicon phototransistor (OPI150) or OPI153 2.6... cece ce cece cece eee eee ees SOV coupled by means of a light pipe and . th i) | housing. The LED and sensor are in N OPII5S 2.6 ee cece cece eee eee eee s 250 mW! hermetically sealed packages. These lotes: . H - nore (1) Measured with input and output leads shorted. series are designed for applications (2) IMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. requiring very high isolation between (3) Derate linearly 3.33 mWP C above 25°C. input and output. (4) Derate linearly 4.17 mWP C above 25°C. Schematics Q@) eho ee 3) () et ee (3) 1 1 j i I a (4) 1 a ‘ (4) \\ 1 \\ ’ OP11S0 OP1153 Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 6-16

Types OPI150, OPI153 Electrical Characteristics (Ta = 25° C unless otherwise noted) | SYMBOL PARAMETER [min | TYP |MAX [UNITS TEST CONDITIONS Input Diode | Ve Forward Voltage OPI150 1.60 v Ip = 50 mA | OPI153 1.60 V__|IF=50mA a | Output Photosensor Viar)ceo |Collector-Emitter Breakdown Voltage OPI150 Vilc=1mA | OPI153 Vv |lc=1mA | Veryeco_| Emitter-Collector Breakdown Voltage OP1150 fs]; | |v Ir = 100 pA | Ver\\cBo |Collector-Base Breakdown Voltage OPI150 Vs lic = 100 pA | | OPI153 Vi |ic = 100 pA | Iceo —_|Collector-Emitter Dark Current OPI150 100 | nA |Vce=10V j OPI153 500 nA |Vce=10V | cao __|Collector-Base Dark Current opiiso| |__| 50 | nA _|Vca=10V [eeu pled Ic/le DC Current Transfer Ratio OPI150 | 10 % le = 10 mA, VceE=5V | OPI153 | 25 % _|lp=20mA, Vce=5V On-State Potodiode Current opiiso | 10 uA _|lp=20mA, Vea =5V Vceisat) | Saturation Voltage OPI150 050; V_ |ir=16mA,Ic=1mA j _ OPI153 [1.20 | V_jlrF=30mAIc=2mA Typical Performance Curves (OPI150 Only) Collector Current vs. Collector Current vs. Relative Collector Current vs.

2 Collector-Emitter Voltage Diode Forward Current Temperature ~o2

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= tae z A Ey 2 A Fr] §.Li 4 7 eeerre) Eee Zt Pe : 8 5 see LLY iE] TT Tt rca lL] | | | “LETT 1 I | ee ° ° . 5s w % 20 2% 3 . s % 0 2% 3 “0-2 SSS 100 Vc - COLLECTOR VOLTAGE ~ V 1 - DIODE FORWARD CURRENT ~_mA Ta — AMBIENT TEMPERATURE ~ °C Normalized Dark Current vs. s Ambient Temperature Switching Time vs. Collector Current Test Circuit rr B ee : f= 10mA Vee = 10¥ Vee=10¥ peer | | INUIT Ts € a) Y a 20 PCC einbs Ew z ee A V NO CCE ESC =p PLU EAN to hy PNT 10 i . fin with the following characteristics: Zgyt = 509, 5 4 StS 100 a 10 10 tS 15 ns, Duty cycle ~ 1%, pulse Ta ~ AMBIENT TEMPERATURE ~ °C Ig COLLECTOR CURRENT — mA width = 100 p. . Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carroliton, Texas 75006 (972)323-2200 Fax (972)323-2396 6-17