OPI150TX OPTEK | Alldatasheet
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Product Bulletin OPI150TX os) September 1996 Types OPI150TX, OPI150TXV Po ceh o/s i JUTE O07 IoIcATES oy > “ RAres us oa $05 Five ASS feed ee 8 Sem (050 (1.27) 2 i s NEED OSS — ir Tt yy £ a— — is) esa = | oo y £ jae. eo gay | av esn ow (1. Sie 7 + 400, (10.18) a df * CATHOOE LEAD, OTHER LEADS ARE 060 (1.52) NOH LONGER. m yj A DIMENSIONS ARE IN INCHES (MILLIMETERS) rue Hi "THIS DIMENSION 15 CONTROLLED AT THE HOUSING SURFACE ee i Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) transistor biasing Lead Soldering Temperature[1/16 inch (1.6 mm) from case for 5 sec. with soldering * Components processed to Optek’s HOM]. eee eee eee eee eee eee rete eect eee e tee seesneeeesees 240°C screening program patterned after Input Diode Description Output Photosensor The OPI150TX and OPI150TXV are Continuous Collector Current... 002.000 e cece cece seen ee eeneeeeeees 50 MA coupled to an NPN silicon Notes: . oo . . a phototransistor component (OP804TX or (1) Mesaured with input and output leads shored together in air with maximum relative humidity OP804TXV) by means of a light pipe (2) Derate linearly 2.00 mW/ C above 25°C. and sealed in a high dielectric plastic (3) Derate linearly 2.50 mW/°C above 25° C. housing. This series is designed for (4) Methanol or isopropanol are recommended as cleaning agents. applications requiring very high voltage isolation between input and output. Schematic High reliability processing is performed in accordance with MIL-PRF-19500 for oo both the infrared light emitting diode and (1) et <—-o (3) i 1 \\ the NPN silicon phototransistor at the | Ar (4) component level. Typical screeing and 1 ! lot acceptance tests are provided on (er tHe (5) Page 13-4. OPI150 Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75008 (214) 323-2200 Fax (214) 323-2396 13-50
Types OPI150TX, OPI150TXV Electrical Characteristics (Ta = 25° C unless otherwise noted) [SYMBOL ~ PARAMETER [MIN|TYP|MAX[UNITS| TEST CONDITIONS ] Input Diode | Ve |Forward Voltage 144] 17) Vv |ip=30mA 16 | 19 | Vv lle= 30 mA, Ta = -55°C 4.15 | 15 V__ lp = 30 mA, Ta = 100°C [Output Photosensor | Collector-Emitter Breakdown Voltage | 50 | 60 | | V_ |ic=1.0mAle=O,lr=0 | Emitter-Base Breakdown Voltage [70 | 10] | v_|ic=100pA,tc=0,1r=0 * of Collector-Base Breakdown Voltage | so [100] | Vig = 100 pA, le = 0, Ip = 0 5 Fa IcEo Collector-Emitter Dark Current 0.2 | 100 nA |Vce = 10.0 V, Ip =0, IF =0 1 a is} 10 | 100 | pA |Vce=10.0V,I3=0,lF=0,Ta=100°C | Rita | 8 Collector-Base Dark Current Ves = 10.0 V, le = 0, IF=0 Ic(on) | On-State Collector Current) 1.0 mA |Vce =5V, Ip =0, Ir = 10 mA | 06 mA |Vce =5 V, le = 0, Ir = 10 MA, Ta = -55°C | 0.6 mA_|Vce =5V, Ip = 0, Ir = 10 mA, Ta = 100°C | Vcesat) |Collector-Emitter Saturation Voltage [| 020] 0.30; V llc = 1.0 mA, Ip = 0, Ir = 16.0 mA | viso [isolation Voltage (Input-to-Output) [500] | | _kv_|SeeNote 1 | t _ [Output Rise Time |_| 80 | 150) ys |Vcc=10.0V,Ic=20mA,Ri= 1002 | [_& _[output Fatt time —__|___[80 | 150] us _|voc=10.0V, 'c=2.0mA, RL = 1002 (6) Measurement is taken during last 500 us of a single 1.0 ms test pulse. Heating due to increased pulse rate or pulse width can cause change in measurement results. Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 13-51