OPI1264 OPTEK | Alldatasheet
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Product Bulletin OPI1264 G).opreK July 1996 oases Types OPI1264, OPI1264A, OPI1264B, OPI1264C \\ To1s (0.38) ©” “™ [ m jrotcates “z20 (5.59) SP, | @ o) — ——— . — — @) L - 100 (2 54) wit x THIS DIMENSION IS CONTROLLED AT THE HOUSING SURFACE * CATHODE LEAD. OTHER LEADS ARE .060 (1.52) NOM LONGER DIMENSIONS ARE IN INCHES (MILLIMETERS) Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) * UL recognized File NO. £58730) Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering 2 HON]. eee cece eee cece eect tees teeesteetteeesseeseeersrers 260°C?) Input Diode coupled isolators, each consisting of an Output Photosensor isolators are designed for applications Notes: requiring high voltage isolation between (1) Measured with input and output leads shorted. Typical input/output capacitance is 0.06pf. (3) Derate linearly 0.67 mA/ C above 25°C. (4) Derate linearly 0.83 mW? C above 25° C. Replaces (5) Derate linearly 1.66 mW/° C above 25°C. (6) UL iti 3500 VAC, 1 mi . 8900 series (6) UL recognition is for 3500 VAC, 1 minute only. Schematic (ionienienienieieneieniente) (4) (1) | | 1 sI- | 1 | (2) (3) Lone OP11264 a Optek Technology, Inc. 1215 W. Crosby Road Carroliton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 6-12
Types OPI1264, OPI1264A, OPI1264B, OPI1264C =lectrical Characteristics (Ta = 25° C unless otherwise noted) SYMBOL PARAMETER _ ~~ | MIN | TYP | MAX [UNITS TESTCONDITIONS _| Input Diode | Ve__ [Forward Voltage le = 20™mA Output Phototransistor | \\er)ceo |Collector-Emitter Breakdown Voltage [fo] | |v Ic = 100 pA | Vien)eco | Emitter-Collector Breakdown Voltage 5s | | _|_v_|te=100ya | Iceo Collector-Emitter Dark Current | [100] na _| Voce = 15 V, Ee =0 Coupled | lols |DC Current Transfer Ratio OP11264 12.5 % |\\Ip = 10.0 mA, Vee = 5.0 V OPI1264A | 25 | OPI1264B 50 | 125 i ! OPI1264C 100 Viso_|Isolation Voltage io |__| kvdC |(See Note 1) Vceisar) _|Collector-Saturation Voltage [| Joao] v_|te=10.0mA, Ic = 1.6ma | Iceo _|Collector-Emitter Dark Current | © 200 | nA |le=0,Vce=20V | Typical Performance Curves Collector Current vs Relative Collector Current vs Relative Collector Current vs Collector-Emitter Voltage Diode Forward Current Ambient Temperature 5 10 7 12 we : ETT Ty 2 10 5 s 340 g i | 301 = 04 ove A Ett | | ootor a 10 10 arr 10 10 109 Os 2 0S 100 Vce - COLLECTOR-EMITTER VOLTAGE - V 1 ~ INPUT DIODE FORWARD CURRENT - mA Ta ~ AMBIENT TEMPERATURE - °C Diode Forward Current Collector Dark Current Switching Time vs Diode Forward Voltage vs Ambient Temperature Test Circuit 10° Y Looe) eS ant “CTL UAE = Ly = : = ¢ 5 Al POT ey a ed “Om PHLL) s-LoWit ™ = “3s ton= 4ys TYP
10 Ly “0 ~ ~
‘Ve - FORWARD VOLTAGE - V ‘Ta - AMBIENT TEMPERATURE - °C Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carroliton, Texas 75006 (972)323-2200 Fax (972)323-2396 6-13