OPI120TX OPTEK | Alldatasheet

Document overview

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Technical content

  • High current transfer ratio
  • 15 kV electrical isolation
  • Base lead provided for conventional transistor biasing
  • Components processed to Optek’s screening program patterned after MIL-PRF-19500 for TX and TXV devices De scrip tion The OPI120TX and OPI120TXV are optically coupled isolators, each consisting of a gallium aluminum arsenide infrared light emitting diode (OP235TX or OP235TXV) and an NPN silicon phototransistor (OP804TX or OP804TXV) sealed in a high dielectric plastic housing. This series is designed for applications requiring high voltage isolation between input and output. High reliability processing is performed at the component level in accordance with MIL-PRF-19500 for both the infrared light emitting diode and the NPN silicon phototransistor.Typical screening and lot acceptance tests are provided on page 13-4. Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted) Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing In put Di ode Out put Pho to sen sor Notes: (1) Measured with input leads shorted together and output leads shorted together in air with a maximum relative humidity of 50%. If suitably encapsulated or oil immersed, the isolation voltage is increased to at least 25 kV. (2) Derate linearly 2.0 mW/o C above 25o C. (3) Derate linearly 2.5 mW/o C above 25o C. (4) Methanol or isopropanol are recommended as cleaning agents. Prod uct Bul le tin OPI120TX/TXV Sep tem ber 1996 Hi- Rel Op ti cally Cou pled Iso la tor Types OPI120TX, OPI120TXV Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (214) 323- 2396 13-46

Types OPI120TX, OPI120TXV Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted) SYM BOL PA RAME TER MIN TYP MAX UNITS TEST CON DI TIONS In put Di ode VF Forward Voltage(5) 1.00 1.40 1.70 V IF = 30 mA 1.20 1.60 1.90 V IF = 30 mA, TA = -55o C 0.90 1.15 1.50 V IF = 30 mA, TA = 100o C IR Reverse Current 0.1 10 µA VR = 2 V Out put Pho to tran sis tor V(BR)CBO Collector-Base Breakdown Voltage 30 40 V IC = 100 µA, IE = 0, IF = 0 V(BR)CEO Collector-Emitter Breakdown Voltage 30 40 V IC = 100 µA, IB = 0, IF = 0 V(BR)EBO Emitter-Base Breakdown Voltage 5.0 V IE = 100 µA, IC = 0, IF = 0 IC(OFF) Collector-Emitter Dark Current 0.2 100 nA VCE = 10 V, IB = 0, IF = 0, 10 100 µA VCE = 10 V, IB = 0, IF = 0, TA = 100o C ICB(OFF) Collector-Base Dark Current 0.1 10.0 nA VCB = 10 V, IE = 0, IF = 0 Cou pled IC(ON) On-State Collector Current(5) 2.0 mA VCE = 5 V, IB = 0, IF = 10 mA 1.2 mA VCE = 5 V, IB = 0, IF = 10 mA, TA = -55o C 1.2 mA VCE = 5 V, IB = 0, IF = 10 mA, TA = 100o C VCE(SAT) Collector-Emitter Saturation Voltage 0.25 0.30 V IC = 2 mA, IB = 0, IF = 20 mA VISO Isolation Voltage (Input to Output) 15.0 30.0 kV See Note 1 tr Output Rise Time 8.0 15.0 µs VCC = 10 V, IC = 2 mA, RL = 100 Ω tf Output Fall Time 8.0 15.0 µs VCC = 10 V, IC = 2 mA, RL = 100 Ω (5) Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. Heating due to increased pulse rate or pulse width can cause change in measurement results. Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (214) 323- 2396 13-47