OPI110 OPTEK | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

. (PD OPTEK Product Bulletin OPI110 July 1996 Types OPI110, OPI110A, OPI110B, OPI110C, OPI113 . 02s (0.68) +850 (13.97) Bor INDICATES SA, 4 [| = =a] 7 20 (6.10) OO SE Now ae a0 (1.02) § + 500 (12.70) Sy tow Ss. ss 1 CATHODE LEAD. OTHER LEADS ARE .060 (1.52) NOH LONGER % vm THIS DIMENSION IS CONTROLLED AT THE HOUSING SURFACE DIMENSIONS ARE IN INCHES (MILLIMETERS) Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) UL Recognized File Number Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering 5873005 WON]. ooo eee cece cece ee ee eee ecesteeteesteneeseseress 260°C?) Input Diode The oPli 10 and OPI113 series devices Output Photosensor Containing an infrared emitting diode and OPI13 . 2. eee cee eee e eens 15V OPI113 uses either a photodarlington or Notes: phototransistor sensor. The devices are (1) Measured with input and output leads shorted. Typical input/output capacitance is 0.06 pF. sealed in a precast opaque housing. (2) RMA flux is recommended, Duration can be extended to 10 sec. max. when flow soldering. «= ceries is deci icati (3) Derate linearly 0.67 mA? C above 25°C. This series is designed for applications (4) Derate linearly 0.83 mWP C above 25° C. requiring high voltage isolation between (5) Derate linearly 1.67 mW/° C above 25°C. input and output. (6) UL recognition is for 3500 VAC, 1 minute only. Replaces Schematics K8900 series (er he (4) OO a) 1 1 | 1 wv 1 1 ae an 1 1 1 1 OPT110 OPI113 Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 6-4

Types OPI110, OPI110A, OPI110B, OPI110C, OPI113 Electrical Characteristics (Ta = 25° C unless otherwise noted) [ SYMBOL PARAMETER | MIN | TYP [MAX]UNITS] _ TEST CONDITIONS Input Diode ee Forward Voltage [| |160 |v ir=20ma Output Photosensor | Veryceo | Collector-Emitter Breakdown Voltage OPI110 Vs |Ic = 100 pA | OPI113 V__|ic = 100A, Ir =0 Emitter-Collector Breakdown Voltage [so] | |v | le = 100 pA, Ir = 0 | | Iceo Collector-Emitter Dark Current OPI110 100 | nA |Vce=15V, Ee=0 | OPI113 100 nA |Vce=10V, Ee=0 Coupled | DC Current Transfer Ratio OPI110 12.5 % |Ip = 10.0 mA, Vce = 5.0 V | OPI110A 25 % |Ip = 10.0 mA, Voce =5.0V | OPI110B 50 % IF = 10.0 mA, Voce =5.0V OPI110C | 100 % \\Ip= 10.0 mA, Vce =5.0V OPI113 50 % \\Ip=5.0MA, VcE=2.0V j | Vceisat) | Collector Saturation Voltage OPI110 0.40 Vs |tr= 10.0 mA, Ic = 1.6 mA | OPI113 1.20 V_|Ir= 10.0 mA, Ic = 5.0 mA ] IcEo Collector-Emitter Dark Current OPI110 200 nA |Vce = 20.0 V, Ir =0 | | OPI113 100} nA |Vce = 10.0V, IF =0 | | Viso. [lation Votage [roo | |_| kv00 [See Note | Typical Performance Curves (OPI110 Only) Collector Current vs Relative Collector Current vs Diode Forward Current vs 392 Collector-Emitter Voltage Diode Forward Current Diode Forward Voltage x ze 10 10 7 23a [ Bele | | |, ay A 7? F t PTX i ee 5, _\\\\iF = 24 mA] g ‘9 z° Tas 70°C SJ a zy 5 z rosy) TE | 7 4 PEA s » 8 2 Y] =o = 20 : = ; / i) oa == —S S Sy 7 Wi rit ii | pd LLY | | | ° i 19 10 100 of 08 10 12 14 168 18 VCE ~ COLLECTOR EMITTER VOLTAGE - ‘If ~ INPUT DIODE FORWARD CURRENT - mA Ve ~ FORWARD VOLTAGE - V a Relative Collector Current vs Relative Collector Dark Current Switching Time Ambient Temperature vs Ambient Temperature Test Circuit 12 wo dtTt tT) (oT ; FA i | '—— vee=10¥ CDeCCS) oo oi pa tt | ee | as TAT sat 2 os EE 10 a Z| omnis

3 Ze 2002 1002

ee, . ° PCO ETT amma rand ty for are ty; HS. LETT ET) (Tet The pt newt ape owt “80-25 0 25 80 75 100 Pe ee with the folowing characteristics: Zoyy = 500, ‘Ta - AMBIENT TEMPERATURE - °C ‘Ta ~ AMBIENT TEMPERATURE - °C ty $15 ns, duty cycle =1%, pulse width = 100 ps. Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 6-5