OPF470 OPTEK | Alldatasheet
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Product Bulletin OPF470 GD opreK August 1996 SSeS Type OPF470 —. eee > ies nae ose eee oe a eee 133 (3.53) 2233 (8.72) ces i ee “BoD "ais (5.46) ‘ Hdl ete 048 (1.22) i i aroee: ort (0.28) | EIS (049) O14, ano wen Hi : 038 (0.81) Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) diameter bore of standard fiber optic Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering receptacles WON]. eee cece cece cece cece e este ee etsssteeteeeeeeesrss 240°C?) ¢ Press fit simplifies component Notes: installation (1) Derate linearly @ 2.0 mW/° C above 25° C. imi i ti licati (2) RMA flux is recommended. Duration can be extended to 10 sec. max when flow soldering. ° Con ee 00 Rigen tee ications) Test @ Va = 5 V with 50/125 micron, 0.20 N.A. fiber, @ 10 uW optical power @ 850 nm. Responsivity levels apply to 50 um, 62.5 um and 100 um core optical fibers. Description (4) Ri = 50 Q, 10%-90% The OPF470 is a low noise silicon PIN Typical Performance Curves photodiode mounted in a low cost package for fiber optic applications. It Relative Spectral Response offers fast response at moderate bias 100 and is compatible with LED and laser ° LITT LILIAN LOE diode sources in the 800-900 nm 090 [| wavelength region. Low capacitance LTT ELIYA improves signal to noise > 080 4 performance in typical short haul LAN Ss LTT EL VELL ‘ness | CCC a The PIN Photodiodes are designed to & 0.60 V 1 interface with multimode optical fibers Bz on IATL ELLE from 50/125 to 200/300 microns. g LPIY ELTA G A » SCOZCCEEE S REZ 02 " VIL ITT TTT TTT on so 680 7s Wavelength (nm) Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 8-80
Electrical Characteristics (Ta = 25°C unless outherwise noted) [ SYMBOL PARAMETER _| MIN | TYP |MAX[UNITS TESTCONDITIONS_—| [np [ruxnesponsiy fons [ss || aw | Va=5.0Vv0 | [__t _ [Output Rise Time [| [eo] | ns [vans L_Fov [Fics ot view [tel [ost SSC—~S™ TYPICAL PERFORMANCE CURVES DARK LEAKAGE CURRENT RISE TIME vs. AMBIENT TEMPERATURE vs. REVERSE VOLTAGE ‘mee ee 10000 | | | i = 1000 4 14 | | ot _ 5 100 gv r 7 g 1 ma aod i ee Z = NG E 4 ~ 4 Po 4mm of 0 25 50 75 100 125 %5 10 20 30 40 50 60 70 80 90 100 Th AMBIENT TEMPERATURE - (°C) REVERSE VOLTAGE (VOC) DARK LEAKAGE CURRENT TYPICAL CAPACITANCE vs. REVERSE VOLTAGE vs. REVERSE VOLTAGE 30 5 a a = 28 2 pe S 20 = 10 a 2 s ee of g 15 PEELE | z 3 Poe ee Sd & 3 10 s § Ree 8 4 4 aL (KEES 5 p> >a = 2, Se ail | | eS 00 ket pO 0 10 20 30 40 50 60 70 80 90 100 10 4 REVERSE VOLTAGE (VDC) 9 a0 vevense eLTAge i) 89 90 100 Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 8-81