OPB253A OPTEK | Alldatasheet
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OPTEK TECHNOLOGY INC ObE D ff 4u798sa0 cooo310 & Optoslectronics Division ° T- - aituy ‘TRW Electronic Components Group - 4 ) 73 a a iif Product Bulletin 6282 Janwary 1985 —eeSSSSSSSSSSSSSSSSSSSSSAa Reflective Object Sensor Type OPB253A we $2202 aon sou . ce SW 825 (200 8, OFLCS HOM i é u c 335050 RESPONSE “910 (2548), : \\ ‘wae wot im \\ 19 1298) t a “ BLACK ‘GREEN bad Features Absolute Maximum Ratings (Ta = 25°C unless otherwise noted) © Low cost plastic housing Input Diode Description Output Phototransistor plastic housing. The phototransistor responds to. Notes: lacy 107 ee we radiation from the LED only when a reflective (0 Gerate WiC sbove 265 sg ‘thin it ie (2) Derate {nearby 0.67 mWIPC above 26°C. ‘The OPB253A utilizes an OP123 or OP223 LED a fea Mex) i ie cc caret ‘measured wie feat cure n the rt ode sed wth ‘no reflecting surface. and an OPGOO family sensor. Leads are #26 AWG, cares one ad erent case cundiin vat 0 the comentonel ~o bat. teflon insulation, 4.0” {101.8 mm) minimum (614i the dtc om th asentyfaad the reflect cua, length, stripped and tinned. ‘Tptoslectronies Division, Taw Flectronce Components Group, 7 BW. Crosby 7d. Tarralton, ™X 75008 z 4) 305-2000, Tx Br 10032 ore ea40 214
OPTEK TECHNOLOGY INC ObE D | 6798580 OOO03L1 & I Type OPB253A T-4\\-13 Sk Electrical Characteristics (Ta - 26°C unless otherwise noted) Input Diode A A a | ‘Output Phototransistor [tise tector radon Vole TT eT peop i [itreen [Enter ttscorGeskiown Votage | 80 [| ¥ | -10a CC Combined ‘On-State Coector Current BA If = 40 mA, Vee = 6.0 V, d= 0,20 in. (6.08 mm). See Note 3. a a A Vceisar) | Colactor-Emitter Saturation Vatiage Vv ig=40 mA, Ig = 10.0 pA, Typical Performance Curves Collector Current vs. Normalized Collector Currant Normalized Collector Current te0 Diode Forward Currant \\ va. Ambient Temperature va. Object Distance SS " ———— . re ee GEL mr | ae ee C(t ed | ge l b | 4e be] a lea a i [EK | \\ € C4 eee ode as fai EON a a"GrTterttLel ? EA | 7 | o = £ te y/o a F ETT Ta ane at wel LI
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‘ bss: “| 1” n 8 ry ‘pws mw ww We oof ez Os Oe Oe ‘Ig ~ DIODE FORWARD CURRENT — mA ‘Ta ~ AMBIENT TEMPERATURE - °C 4~ DISTANCE TO REFLECTIVE SURFACE leche Rise and Fail Tima vs. Test Condition ‘Load Resistance . mI rerigcragsannce J a Fis ; i — z Bab 5 6 un ~~ mK god 4 su —tono aessrance 2 fr ototmaassron ‘TAW reserves the right to make chengas at any time in order to improve design and to supply the best vet possible. Dptoelectronics Division, Electronic Components Group, 1216 W. Crosby Rd., varroliton, [} 323-2200, TI 16032 or 2151 216