OP993 OPTEK | Alldatasheet

Document overview

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Technical content

  • Wide receiving angle
  • Linear response vs. irradiance
  • Fast switching time
  • TO-18 equivalent package style De scrip tion The OP993 photodiode consists of a PIN silicon photodiode mounted in a dark blue plastic injection molded shell package. The wide receiving angle provides excellent on-axis coupling. The sensors are 100% production tested for close correlation with Optek emitters. Optek’s packaging process provides excellent optical and mechanical axis alignment. The shell also provides excellent optical lens surface, control of chip placement, and consistency of external package dimensions. Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted) Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.67 mW/o C above 25o C. (3) Light source is an unfiltered GaAlAs emitting diode operating at peak emission wavelength of 890nm and Ee(APT) of 1.7 mW/cm2 average within a .250" dia. aperture. (4) This dimension is held to within ± 0.005" on the flange edge and may vary up to ± 0.020" in the area of the leads. Typi cal Per form ance Curves Prod uct Bul le tin OP993 June 1996 PIN Sili con Pho to di ode Type OP993 Relative Response vs. Wavelength λ - Wave length - nm Coupling Characteristics OP993 and OP293 Dis tance Be tween Lens tips - inches VR = 5 V IF = 20 mA Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396 3-64

Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble. Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted) SYM BOL PA RAME TER MIN TYP MAX UNITS TEST CON DI TIONS IL Reverse Light Current 12.5 28.5 µA VR = 5 V, Ee = 1.7 mW/cm2(3) ID Reverse Dark Current 1 60 nA VR = 30 V, Ee = 0 V(BR) Reverse Breakdown Voltage 60 V IR = 100 µA VF Forward Voltage 1.2 V IF = 1 mA CT Total Capacitance 4 pF VR = 20 V, Ee = 0, f = 1.0 MHz tr, tf Rise Time, Fall Time 5 ns VR = 20 V, λ = 850 nm, RL = 50 Ω Typi cal Per form ance Curves Light Current vs. Irradiance Switching Time Test Circuit Light Current vs. Angular Displacement θ - Angular Displacement - Deg. Test Conditions: λ = 935 nm VR = 5 V Distance Lens to Lens = 1.5 inches Ee - Irradiance - mW/cm2 Normalized Light Current vs Reverse Voltage Total Capacitance vs Reverse Voltage VR - Reverse Voltage - V VR - Reverse Voltage - V TA = 25o C λ = 935 nm Normalized to VR = 5 V TA = 25o C Ee = 0 mW/cm2 f = 1 MHz VR = 5 V TA = 25o C λ = 890 nm Normalized Light and Dark Current vs Ambient Temperature TA - Ambient Temperature - oC VR = 5 V λ = 890 nm Normalized to TA = 25o C Dark Current Light Current 3-65 Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396