OP955 OPTEK | Alldatasheet

Document overview

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Technical content

  • Wide receiving angle
  • Linear response vs. irradiance
  • Fast switching time
  • Side-looking package ideal for space limited applications De scrip tion The OP955 devices consists of a PIN silicon photodiode molded in a clear epoxy package which allows spectral response from visible to infrared wavelengths. The wide receiving angle provides relatively even reception over a large area. The side-looking package is designed for easy PC board mounting. The lensing effect of the package allows an acceptance half angle of 45o measured from the optical axis to the half power point. These devices are 100% production tested using infrared light for close correlation with Optek’s GaAs and GaAlAs emitters. Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted) Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.67 mW/o C above 25o C. (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the photodiode being tested. (4) To calculate typical dark current in µA, use the formula ID = 10(0.042 TA-1.5) where TA is ambient temperature in o C. Typi cal Per form ance Curves Prod uct Bul le tin OP955 June 1996 PIN Sili con Pho to di ode Type OP955 Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396 Relative Response vs. Wavelength λ - Wave length - nm Coupling Characteristics OP955 and OP245 Dis tance Be tween Lens Tips - inches VR = 5 V IF = 20 mA 3-62

Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble. Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396 Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted) SYM BOL PA RAME TER MIN TYP MAX UNITS TEST CON DI TIONS IL Reverse Light Current 8 18 µA VR = 5 V, Ee = 1 mW/cm2(3) ID Reverse Dark Current 1 60 nA VR = 30 V, Ee = 0 V(BR) Reverse Breakdown Voltage 60 V IR = 100 µA VF Forward Voltage 1.2 V IF = 1 mA CT Total Capacitance 4 pF VR = 20 V, Ee = 0, f = 1.0 MHz tr, tf Rise Time, Fall Time 5 ns VR = 20 V, λ = 850 nm, RL = 50 Ω Typi cal Per form ance Curves Light Current vs. Irradiance Switching Time Test Circuit Light Current vs. Angular Displacement θ - Angular Displacement - Deg. Test Conditions: λ = 935 nm VR = 5 V Distance Lens to Lens = 1.5 inches Ee - Irradiance - mW/cm2 Normalized Light Current vs Reverse Voltage Total Capacitance vs Reverse Voltage VR - Reverse Voltage - V VR - Reverse Voltage - V TA = 25o C λ = 935 nm Normalized to VR = 5 V TA = 25o C Ee = 0 mW/cm2 f = 1 MHz VR = 5 V TA = 25o C λ = 935 nm Normalized Light and Dark Current vs Ambient Temperature TA - Ambient Temperature - oC VR = 5 V λ = 935 nm Normalized to TA = 25o C Dark Current Light Current 3-63