OP906 OPTEK | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
- Narrow receiving angle
- Linear response vs irradiance
- Fast switching time
- T-1 package style
- Small package ideal for space limited
applications
The OP906 device consists of a PIN silicon photodiode molded in a clear epoxy package which allows spectral response from visible to infrared light wavelengths. The narrow receiving angle provides excellent on-axis coupling. These devices are 100% production tested using infrared light for close correlation with Optek’s GaAs and GaAlAs emitters. Lead spacing is 0.100 inch (2.54 mm). Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted) Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.67 mW/o C above 25o C. (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the photodiode being tested. (4) To calculate typical dark current in nA, use the formula ID = 10(0.042 TA-1.5) where TA is ambient temperature in o C. Typi cal Per form ance Curves Prod uct Bul le tin OP906 June 1996 PIN Sili con Pho to di ode Type OP906 Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396 Relative Response vs. Wavelength λ - Wave length - nm Coupling Characteristics OP906 and OP266 Dis tance Be tween Lens Tips -inches VR = 5 V IF = 20 mA 3-54
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble. Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396 Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted) SYM BOL PA RAME TER MIN TYP MAX UNITS TEST CON DI TIONS IL Reverse Light Current µA VR = 5 V, Ee = 0.50 mW/cm2(3) ID Reverse Dark Current nA VR = 30 V, Ee = 0 V(BR)R Reverse Breakdown Voltage V IR = 100 µA VF Forward Voltage 1.2 V IF = 1 mA CT Total Capacitance pF VR = 20 V, Ee = 0, f = 1.0 MHz tr, tf Rise Time, Fall Time ns VR = 20 V, λ = 850 nm, RL = 50 Ω Typi cal Per form ance Curves Light Current vs. Irradiance Switching Time Test Circuit Light Current vs. Angular Displacement θ - Angular Displacement - Deg. Test Conditions: λ = 935 nm VR = 5 V Distance Lens to Lens = 1.5 inches Ee - Irradiance - mW/cm2 VR = 5 V TA = 25oC λ = 935 nm Normalized Light Current vs Reverse Voltage Total Capacitance vs Reverse Voltage VR - Reverse Voltage - V VR - Reverse Voltage - V TA = 25o C λ = 935 nm Normalized to VR = 5 V TA = 25o C Ee = 0 mW/cm2 f = 1 MHz Normalized Light and Dark Current vs Ambient Temperature TA - Ambient Temperature - oC VR = 5 V λ = 935 nm Normalized to TA = 25o C Dark Current Light Current 3-55