OP800 OPTEK | Alldatasheet
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OPTEK TECHNOLOGY INC ObE D | 6794540 0000174 2 | toelectronics Division =~ | =, sae th Electronic Components Group T-4\\-lo) 7 7try Product Bulletin 6196 Jenuery 1986 eee NPN Silicon Phototransistors Types OP800, OP801, OP802, OP803, OP804, OP805 ; ste awe cqusron a ase ou ow : 187 1479, (me) fo) 048 122) vt . 178 14.58) al > O28 0.711 zohin a9 0) i ON | Va eo) segue >» DIMENSIONS ARE IN INCHES (MILLIMETERS), As Features Absolute Maximum Ratings (Ta - 26°C unless otherwise noted) © 10-18 hermaticelly sealed package Emitter-Base Voltag@ «02... .sceseeesesesscseesssststestestestistinsrterrrrerrrre60V packages offer high power dissipation, end Wotes: . Superior hstle environment operation. The lrsng 1) MA fox & icgnnatde. Duration cen be exnded wo 10 set, max whan wave sing affect allows en acceptance half engl of 10° [Gus etla0 06h bee ZC . ‘measured from the optical axis to the half power 4) Lyht seuss & or eabhond 4 ra . paint. The base led is bonded to enable Meer mnt rem hw C1 ~ATPK ltat ‘conventional transistor bising. This series is Typical Performance Curves ‘mechanically end spectrally matched to the OP130 . te ‘Spectral Response of OP800-0P805 Coupling Cheractaristics and OFZ series of infrared emiting codes. cov Safle and GaAs 5 of OP130 and OP800 "4 AT RCCECEE) = at_| [NA a SECC EEAZTAPE] SAREESEEEH aN AI oo ONCE |e eee wo \\ oz CANN) TEEEEEEFEFH A/A_ \\ COP errr 3 ° a. sc stn te - ‘Test Conditions (LED: Ty = Ty = 28°C, lf = 100 mA, . Optoelectronics Diva ion, AW A lectronic Components Group, 72 BW. Trosby Ad., Tarrallton, x 75006 yi ay 323-2000, LX 7 B02 or 21 Br t i
OPTEK TECHNOLOGY INC ObE D 4778580 Oooo17s 4 ff : Types OP800, OP801, OP802, OP803, OP804, OP805 T-4\\-lo} elt ec ae Electrical Characteristics (Ta = 25°C unless otherwise noted) loon ‘On-State Collector Current ‘OPa00 | 0.60 mA | Ve ~ 5.0 V, Eg = 6.0 mime OPeO1 | 0.50 30 mA | Voe~ 8.0 V, Ey = 5.0 mWicm2 oped2 | 2.0 60 mA | Voce = 6.0 V, Ey = 6.0 mWicm™™" - ope0s | 4.0 80 mA | Vee = 5.0 V, Eq = 8.0 mWvicm@ opeo4 | 7.0 2 mA | Vee = 5.0 V, Eg = 6.0 mien? 0Pa0s | 15.0 mA_| Voge = 6.0 V, Ep = 6.0 mile! a AK ” cL a aes Terre Sota Vite || La [=a A = 6 ae a = Oe | Fall Time i= 1000, Seo Tast Circuit Typical Performance Curves , Collector Dark Current Normalized Collector Current Collector Current . vs, Ambient Temperature 2 vs. Ambient Temperature vs. irradiance Wer=8¥ 50Y Y | + ava ST at [TA Ye [ } TTY 1 [emia 7] RES 7 PUTTTIAL| ects) gs a \\Z| Pro i. Pt TA | i s TT iA TT LZ LIrvtry |) oe A i” eCo7 rT PAIL bE4e by ao |-LA ST TACLLLE oLYEET 1 TCPLLTIL) *.a EET sO TT ZEEE LT I 0 2 40 6 80 100 120 140 “60-25 0 2% 80 75 100 128 o 4 8 @ 8 0 w ‘yma rns — ee soba Rise and Fall Time Normalized Collector Current Switching Time vs. Load Resistance — vs. Angular Displacement Test Circuit Yor=8¥ | IJ Tercmomens TT Td — ety ] rates 088 «eee RA » fo yet ‘ng Ft T tJ : Ra terce 7A Pg Pee4 RERIRAES 2. | 144 «ASA a eee fo ae oo araees~ a 4 i a a a ae
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1 yo ate Oe ? natbnocuccian 8 ‘TRW reserves the right to maka changes at any time in arder to improve design and to supply the best product possible. ‘Tptostectronios Division, FAW Electronic Components Group, O16 W. Troy. fo, Carrolton, TX 75008 (214) 305-2200, TK G7 16082 oF Teed ‘© TRW Inc. 1986, 1982, TRW is the name end mock of TRW Inc. Printed in U.S.A, bl)