OP803 OPTEK | Alldatasheet
Document overview
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Technical content
- High reliability screening patterned after MIL-PRF-19500
- Each lot subjected to Group A & B Lot Acceptance
- Lensed for high sensitivity
- Mechanically and spectrally matched to the OP235TX/TXV and OP236TX/TXV series IREDs De scrip tion Each device in the OP803, OP804 and OP805TX/TXV series consists of a high reliability NPN phototransistor mounted in a lensed, hermetically sealed, TO-18 package. All devices are 100% screened per Table II of MIL-PRF-19500. Typical screening and lot acceptance tests are provided on page 13-4. The OP803, OP804 and OP805 TX/TXV series lensing creates an acceptance half angle of 12 o< D> measured from the optical axis to the half power point. The series can be matched with either a solid state infrared source, such as the OP235 and OP236 TX/TXV series IREDs, or can be used to sense infrared content in a visible light source, such as a tungsten bulb or sunlight for automatic brightness control. Ab so lute Max i mum Rat ings (TA = 25o C un less oth er wise noted) Lead Sol dering Tem per a ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. (2) Derate linearly 2.5 mW/ o C above 25o C. Prod uct Bul le tin OP803TX Sep tem ber 1996 Hi-Reliability NPN Sil i con Phototransistor Types OP803TX/TXV, OP804TX/TXV, OP805TX/TXV Optek Tech nol ogy, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 13-34
@TOPICS = Types OP803TX/TXV, OP804TX/TXV, OP805TX/TXV Optek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble Optek Tech nol ogy, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)32 3-2200 Fax (972)323-2396 Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted) Sym bol Pa ram e ter Min Typ Max Units Test Con di tions IC(on) On-State Collector Current OP803TX,TXV OP804TX,TXV OP805TX,TXV 4.0 7.0 15.0 8.0 22.0 mA mA mA VCE = 5.0 V, Ee = 5.0 mW/cm2(3) VCE = 5.0 V, Ee = 5.0 mW/cm2(3) VCE = 5.0 V, Ee = 5.0 mW/cm2(3) ICEO Collector-Emitter Dark Current 100 100 nA µA VCE = 10.0 V, Ee = 0 VCE = 10.0 V, Ee = 0, TA = 100o C V(BR)CBO Collector-Base Breakdown Voltage 30 V IC = 100 µA, IE = 0, Ee = 0 V(BR)CEO Collector-Emitter Breakdown Voltage 30 V IC = 100 µA, IB = 0, Ee = 0 V(BR)EBO Emitter-Base Breakdown Voltage 5.0 V IE = 100 µA, IC = 0, Ee = 0 VCE(SAT) Collector-Emitter Saturation Voltage 0.40 V IC = 0.4 mA, Ee = 5.0 mW/cm2(3) tr Rise Time OP804TX,TXV OP805TX,TXV 10.0 15.0 µs VCC = 30 V, IC = 1.00 mA, RL = 100 Ω tf Fall Time OP804TX,TXV OP805TX,TXV 10.0 15.0 µs (3) Light source is an un fil tered tung sten lamp op er ated at a tem per a ture of 2870 K. 13-35