OP800SL OPTEK | Alldatasheet
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Product Bulletin OP800SL oy —— June 1996 —_—)]q SSS Types OP800SL, OP801SL, OP802SL, OP803SL, OP804SL, OP805SL Dee uo, Wim acaeemn pacar a pe ee PO ee FP oe SRY see remy \\ BAEZ 0 -100 42.50 « alee 7 ne. ee eae RS yarns BASE. one (1.22) rege ena en 1974.75) Bag AS es p 218 (0.48) Va Oo BET) | caren »S. pee 20 (9,78) $00 {42.26 Pec elie ou eens 15 THIS OIMENSION CONTROLLED AT HOUSING SURFACE. i tae packs A oe ee DIMENSIONS ARE IN INCHES (MILLIMETERS) Meee ee he es ne Sea Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) p 9 Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering | U0) T-(0 y et " w2) Notes: The OP800SL series device consists of i) ) RMA Tl is recommended, Duration gan be extended to 10 sec. max. when flow soldering, an NPN silicon phototransistor mounted (3) Junction temperature maintained at 25° C in a hermetically sealed package. The (4) Light source is an unfiltered tungsten bulb operating at CT = 2870 K or equivalent infrared narrow receiving angle provides ‘source. excellent on-axis coupling. TO-18 packages offer high power dissipation Typical Performance Curves and superior hostile environment operation. The base lead is bonded to Typical Spectral Response Coupling Characteristics enable conventional transistor biasing. of OP130 and OP800SL wo 10 Replaces ROT ee aw os LMS ce= 8 OP800 and K5251 series = |W LL meet [| g = si 2a ee) Se & 2 [ Soi @ Zot] 1 |r 3" a i) S 5 5 Zo2./ 117 T TT TT I | © PTT Try tt yt o_LT TTT Tite 0 02 o4 06 08 10 = ™ bea bea ba ™ DISTANCE BETWEEN LENS TIPS — Inches Wavelength - nm Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 3-42
Types OP800SL thru OP805SL Electrical Characteristics (Ta = 25° C unless otherwise noted) | Icon) |On-State Collector Current OP800SL | 0.5 mA OP801SL| 0.5 3.0 mA OPs03SL | 4.0 3.0 | ma |YoE=5V, Ee=5 mWicm | OP804SL | 7.0 22.0 | mA OP805SL | 15.0 mA Collector Dark Current [|_| 100 | nA |Vce=10V, Ee=0 | Collector-Base Breakdown Voltage fs] | |v | g Emitter-Collector Breakdown Voltage iso] | |v | le = 100 pA i Emitter-Base Breakdown Voltage fso| | |v | le = 100 pA 1 8 Vce(sat) _[Collector-Emitter Saturation Voltage aees Io = 0.4 mA, Ee = 5 mWicm*® z t [Rise Time || us [Voc =5 V, Ic =0.80 mA, t Fall Time us |RL= 100, See Test Circuit Typical Performance Curves Collector Dark Current Normalized Collector Current Collector Current vs. Ambient Temperature vs. Ambient Temperature vs. Irradiance 100 20 2 * wa = {f-0P2806 @ 2 = 890 om A « {toa sounce 1s unntreneo wa | 10 7, B | pW 100 us de, 20.1% LA_| g_ | tunssten at 2670% / |_| z & 15 Fweasuned 25 us INTO PULSE ‘5 co f go[ TIM itt & : eu si} iz) | PL AL eetopeooo pee 4 : Yili) i.-b4ee ey 7 PPT) * EApeeer ooo 0 ° 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 0 4 8 2 16 20 4 ‘Ty — AMBIENT TEMPERATURE — °C ‘Ta — AMBIENT TEMPERATURE — °C Ee, — IRRADIANCE — mWicm? Rise and Fall Time Normalized Collector Current Switching Time vs. Load Resistance vs. Angular Displacement Test Circuit oe ea rtd " restgoonos “TT TY ‘— voces ; Ftouency- 4 sostesmm (1\\l 1 | an es: = ce] | \\T TT Z = 890 nm 7 A © 0.7 [DISTANCE - 6 con Poe) JER Semansgae, Fac 3 z sows woded 3m = 1000 i i Ca ee ee ee wee" * |
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7, 4 | | | '@e eye y a Pr a a LA | Kt O 2.000 6,000 10,000 45 30 15 0 8 0 45 Ry — LOAD RESISTANCE — Ohms 6 — ANGULAR DISPLACEMENT — Deg. Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 3-43