OP800A OPTEK | Alldatasheet
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Product Bulletin OP800A SP oo June 1996 —— sw NPN Silicon Phototransistors Types OP800A, OP800B, OP800C, OP800D ee pone eS a ce: 5 230 (5.84) Rie bee ee eee 3: Veo BASE 098 (1.22) oS tere , i{[~— £7 eee C7) ile t ORs nee so Lal eats es eos (0.48) 036 (0.31) gil yee. fae 1 DAIS DIMENSION CONTROLLED AT HOUSING SURFACE Ble iteaes DIMENSIONS ARE IN INCHES (MILLIMETERS) Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted ig (see Hi-Rel section) Lead Soldering Temperature Range [1/16 inch (1.6mm) 5 sec. with soldering CC) E100 0 Notes: The OP800 series devices consist of (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering, NPN silicon phototransistors mounted in % Borate linearly 2a mw? Capove 25S, junction temperature maintained at . hermetically sealed packages. The (4) Light source is a GaAlAs LED, 890 nm peak emission wavelength, providing a 0.5 mW/cm? narrow receiving angle provides radiant intensity on the unit under test. The intensity level is not necessarily uniform over the excellent on-axis coupling. These lens area of the unit under test. devices are 100% tested using infrared light for close correlation with Optek Typical Performance Curves GaAs and GaAlAs emitters. TO-18 Coupling Characteristi packages offer high power dissipation Typical Spectral Response of OPY30 and oPe00 ‘ and superior hostile environment wn 10 operation. The base lead is bonded to iY NER enable conventional transistor biasing. 2a VA \\ os OT TE TT Yce= sv Y T,= 25°C a, 1... ON Co Fa \\/ \\ ee) SS cam N 7,
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- #..L1 7711 TTT “ Pt TN PEE EEEEETH o 0 02 04 06 08 10 ho mo ba so mm i DISTANCE BETWEEN LENS TIPS — Inches Wavelength - nm. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 3-40
Types OP800A, OP800B, OP800C, OP800D Electrical Characteristics (Ta = 25° C unless otherwise noted) [symBot| PARAMETER (| MIN|TYP|MAX|UNITS| TEST CONDITIONS o(onj® [On-State Collector Current + OP8OOD 0.45 | mA | OP800B | 1.80 | 540] mA Voe=5V, Ee=0.5 mWicm | | OP800A | 3.60 mA | icco_|Cotlecor Dark Current [|| ioo [na [voe=tovee=o [ Viemozo [CoteaorSes reatdown Vote [ a0| | | V lew tooya | tr Rise Time 7.0 us |Voo=5 V, Ic = 0.80 mA, Fd t Fall Time _ _ t 7.0 ps |RL= 100 Q, See Test Circuit | Typical Performance Curves Collector Dark Current Normalized Collector Current Collector Current vs. Ambient Temperature vs. Ambient Temperature vs. Irradiance 100 20 38 5” S a zi TA 2) tetas /\\_| = = o ALZED A Ta = 25°% i / "COLLECT: me | a ( eee a : LZ “Cora ets 44 at Zit) ieEDA AE a eo oe PUPELLLL) ° fees @ET 0 2 40 60 80 100 120 140 “50-25 0 25 80 75 100 125 0 1 2 3 4 5 6 Ty — AMBIENT TEMPERATURE ~ “C Ty — AMBIENT TEMPERATURE ~ °C Ey = IRRADIANCE — mWicm? Rise and Fall Time Normalized Collector Current Switching Time vs. Load Resistance vs. Angular Displacement Test Circuit * FREQUENCY = 100 Hr © og [i= 100mA ane xp 90 Fte0~ oP2a0e 3B fees To ens » px. | [AA] as ESE tgomesegi, Fuss % | | Ke e {| IT Wy Tf fue tie obese Ban a A 5 eset :,| Z| | | eeppey ZA eS 0 a 0 2,000 6,000 19,000 6% 0 6 0 % 30 45 1h — LOAD RESISTANCE — Ohms @ — ANGULAR DISPLACEMENT — Deg. Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 3-41