OP793 OPTEK | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

  • Variety of sensitivity ranges
  • TO-18 equivalent package style
  • Base-emitter resistor provides ambient light protection De scrip tion The OP793/OP798 series consists of NPN silicon phototransistors molded in dark blue epoxy packages. These devices are 100% production tested using infrared light for close correlation with Optek’s GaAs and GaAlAs emitters. The phototransistor has an internal base- emitter resistor which provides protection from low level ambient lighting conditions. This feature is also useful when the media being detected is semi- transparent to infrared light in interruptive applications. Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted) Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 3.33 mW/o C above 25o C. (3) VCE = 5 V. Light source is an unfiltered GaAlAs emitting diode operating at peak emission wavelength of 890 nm and Ee(APT) of 1.7 mW/cm2 average within a .250" dia. aperture. (4) The knee point irradiance is defined as the irradiance required to increase IC(ON) to 50 mA. Typi cal Per form ance Curves Prod uct Bul le tin OP793, OP798 Sep tem ber 1999 NPN Pho to tran sis tor with Base- Emitter Resistor Types OP793, OP798 Series Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396 Typi cal Spec tral Re sponse Wave length - nm Sche matic OP793 OP798 NOTE: Dimensions not shown on OP798 are common with OP793. Dimensions are in inches (millimeters).

Types OP793, OP798 Series Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble. Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396 Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted) SYM BOL PA RAME TER MIN TYP MAX UNITS TEST CON DI TIONS IC(ON) On-State Collector Current OP793A OP793B OP793C OP793D 2.45 1.65 0.90 0.90 7.50 4.55 3.05 7.50 mA VCE = 5 V, Ee = 1.7 mW/cm2(3) IC(ON) On-State Collector Current OP798A OP798B OP798C OP798D 4.90 3.30 1.90 1.90 15.0 9.20 6.10 15.0 mA VCE = 5 V, Ee = 1.7 mW/cm2(3) EKP Knee Point Irradiance OP793 OP798 .10 .04 mW/cm2 VCE = 5 V(4) ICEO Collector-Emitter Dark Current 100 nA VCE = 10 V, Ee = 0 IECO Emitter-Reverse Current 100 µA VCE = 0.4 V V(BR)ECO Collector-Emitter Breakdown Voltage 30 V IC = 100 µA VCE(SAT) Collector-Emitter Saturation Voltage 0.4 V IC = 0.4 mA, Ee = 1.7 mW/cm2(3)

Types OP793, OP798 Series Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396 OP593 On- State Col lec tor Cur rent vs. Irradiance OP793 VCE = 5 V LED: l = 890 nm OP598 OP798 On- State Col lec tor Cur rent vs. Irradiance VCE = 5 V LED: l = 890 nm RL = 1KW Nor mal ized Out put vs. Frequency RL = 10KW RL - Load Resistance - KW VCC = 5 V VRL = 1 V f = 100 Hz PW = 1 mS LED = GaAIAs, l = 890 nm VRL is voltage across RL Typ i cal Rise and Fall Time vs. Load Resistance 100 .01 .001 .0001 .01 Ee - Irradiance - mW/cm2 .1 1 10 .00001 .001 1.0 0.5 0.0 10 100 1000 Frequency -- KHz 1 108642 120 105 100 .01 .001 .00001 .001 .0001 1 10.01 .1 Ee - Irradiance - mW/cm2 VRL = 1 V VCE = 5 V 50% Duty Cycle LED: l = 935 nm Nor mal ized Light and Dark Current vs. Am bi ent Tem pera ture