OP770A OPTEK | Alldatasheet
Document overview
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Technical content
- Supresses high frequency noise
- Variety of sensitivity ranges
- Wide receiving angle
- Side looking package for space limited
applications
The OP770 consists of an NPN phototransistor and 1000 pF capacitor molded in a clear epoxy package. The internal collector-emitter capacitor allows the device to be used in applications where external high frequency emissions could compromise signal integrity. The device’s wide receiving angle provides relatively even reception over a large area. The OP770 is 100% production tested using an infrared light source for close correlation with Optek’s GaAs and GaAIAs emitters. Side-looking package is designed for easy PC board mounting of slotted optical switches or optical interrupt detectors. Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted) Lead Soldering Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec . with sol der ing Notes: (1) RMA flux is rec om mended. Du ra tion can be ex tended to 10 sec . max. when flow sol der ing. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.33 mW/° C above 25° C. (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lense surface of the phototransistor being tested. (4) To calculate typical collector dark current in µA, use the formula ICED = 10 (0.040TA-3.4) when TA is ambient temperature in °C. Typi cal Per form ance Curves Prod uct Bul le tin OP770A Feb ru ary 2000 NPN Pho to tran sis tor with Collector- Emitter Capacitor Types OP770A, OP770B, OP770C, OP770D Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396 Typical Spectral Response Wavelength - nm Sche matic
Types OP770A, OP770B, OP770C, OP770D Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396 Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted) SYM BOL PA RAME TER MIN TYP MAX UNITS TEST CON DI TIONS IC(ON) On-State Collector Current OP770D OP770C OP770B OP770A 0.85 0.85 1.50 2.25 7.00 2.80 4.20 7.00 mA VCE = 5.0 V, Ee = 1.0 mW/cm2(3) DIC/DT Relative IC Changes with Temperature 100 %/ ° C VCE = 5.0 V, Ee = 1.0 mW/cm2, l = 935 nm ICEO Collector Dark Current 100 nA VCE = 10.0 V, Ee = 0 V(BR)ECO Emitter-Collector Breakdown Voltage 5.0 V IE = 100 mA VCE(SAT) Collector-Emitter Saturation Voltage 0.40 V IC = 100 µA, Ee = 1.0 mW/cm2(3) CCE Capacitance 1000 pF VR = 0 Typi cal Per form ance Curves RL - Load Resistance - KW 160 140 120 100 0 2 OP770 4 6 8 10 VCC = 5 V VRL = 1 V f = 100 Hz PW = 1 mS LED = GaAIAs, l = 890 nm OP550 Typical Rise and Fall Time vs. Load Resistance Normalized Output vs. Frequency Frequency - KHz OP770 VRL = 1 V VCE = 5 V 50% Duty Cycle RL = 10 K W OP550 1.00 .75 .50 .25 0.0 1 10 100 1000