OP705A OPTEK | Alldatasheet

Document overview

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Technical content

  • Narrow receiving angle
  • Variety of sensitivity ranges
  • T-1 package style
  • Small package size for space limited

applications

  • Base-emitter resistor provides ambient light protection De scrip tion The OP705 series devices consist of NPN silicon phototransistors molded in blue tinted epoxy packages. The narrow receiving angle provides excellent on- axis coupling. These devices are 100% production tested using infrared light for close correlation with Optek’s GaAs and GaAlAs emitters. The phototransistor has an internal base- emitter resistor which provides protection from low level ambient lighting conditions. This feature is also useful when the media being detected is semi- transparent to infrared light in interruptive applications. Ab so lute Maxi mum Rat ings(TA = 25o C un less oth er wise noted) Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing Ò±¬»­æ (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.33 mW/ o C above 25o C. (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. (4) The knee point irradiance is defined as the irradiance required to increase I C(ON) to50 •• A. Typi cal Per form ance Curves Prod uct Bul le tin OP705 March 1999 NPN Pho to tran sistor with Base-Emit ter Resistor Types OP705A, OP705B, OP705C, OP705D Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396 Sche matic

Types OP705A, OP705B, OP705C, OP705D Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396 Elec tri cal Char ac ter is tics(TA = 25o C un less oth er wise noted) SYM BOL PA RAME TER MINTYPMAXUNITS TEST CON DI TIONS IC(ON) On-State Collector Current OP705A OP705B OP705C OP705D 3.95 2.65 1.50 1.50 12.0 7.25 4.85 12.0 mA VCE = 5 V, Ee = .50 mW/cm2(3) EKP Knee Point Irradiance .02 mW/cm2 VCE = 5 V(4) ICEO Collector-Emitter Dark Current 100 nA VCE = 10 V, Ee = 0 IECO Emitter-Reverse Current 100 µA VEC = 0.4 V V(BR)CEO Collector-Emitter Breakdown Voltage 30 V IC = 100 µA VCE(SAT) Collector-Emitter Saturation Voltage 0.4 V IC = 250 µA, Ee = .50 mW/cm2(3) Typi cal Per form ance Curves On-State Collector Current vs. Irradiance Normalized Collector Current vs. Angular Displacement

  • - Angular Displacement - Deg. ÑÐëðë Normalized Light and Dark Current vs. Ambient Temperature ÑÐéðë Normalized Output vs. Frequency Frequency - KHz Typical Rise and Fall Time vs. Load Resistance Switching Time Test Circuit ¬º • ëðð ²­ò ÊÝÛ ã ë Ê ÔÛÜæ • ã çíë ²³ ïòð ðòë ðòð ï ïð ïðð ïððð î ì ê è ïð íð ïë ð ìë ïîð ïðë çð éë êð ïðð ïð ï òï òðï òððï òðððï òïòðï ï Ee - Irradiance - mW/cm2 òððððï òððï ÎÔ ã ïÕ• ÎÔ ã ïðÕ • VCC = 5 V VRL = 1 V f = 100 Hz PW = 1 mS LED = GaAIAS, • = 890 nm VRL is voltage across RL ð VRL = 1 V VCE = 5 V 50% Duty Cycle LED: • = 935 nm