OP600 OPTEK | Alldatasheet
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OPTEK TECHNOLOGY INC QbE D | 679485480 0000172 9 i Optoslactronics Division = pees TAW Electronic Components Group a yA vy . Product Bulletin 6131 January 1965 T- Y1-b ee NPN Silicon Phototransistors . Types OPG00-0P604, OP640-0P644 095 10.89) ppgatune on 2115 12.92) meet | ada 000.079 = Sarita iz 3 q war ‘ar Lad tale so Lae a ean ‘ae om DIMENSIONS ARE IN INCHES (MILUMETERS.. Features Absolute Maximum Ratings (Ta = 25°C unless otherwise noted) © Miniature hermetically sealed package Collector-Emitter Voltage — OPGQO-OPE04 eee. eeeseececeseccecescecenseseceseseee 60V ‘© Wide range of collector currents OPBAO-OP ET eee... eee cec cet eeeeeceseeeeeerereenee DSW © Ideal for direct mounting in PC boerds™ Emitter-Collector Voltage — OPGQO-OPEQ4 oo... ek eeeseseceeesscseesssetevsstereess DOW lensed, hermetically sealed, “Pilt" package. The Notes: lensing affect allows an acceptance half angle of 1) Rata to Appicaon Gufetin 111 which dacuses proper tsehiques for sldeing Fil type davies to PC boards. 18° measured from the optical axis to the half (2) RMA flux is recommended. Duration can be extended to 10 sac, max. when wave soldering. a (3) Derate finosrly 0.5 mW/°C above 25°C. ower point. Except for breakdown voltages and {4 sncten temareoe meric ot 29, leakage the OPGOO series and OPB40 seres are {6} Ught source is en wnfitered tungsten bulb operating at CT = 2870°K or equivalent infrared source. ‘identical. They are also mechanically and spectrally . matched to the OP123 ond 0P223 sees of -‘TBlcal Performance Curves Infrared emitting diodes. Photosansor Spectral Response Coupling Characteristics vs. GaAlAs and GaAs 100 of OP123 and OPG00 aN ] (TT TTT TTT yy tal] AA 6 CECE PACA) IC EREEEEEEEE A \\ « NACHTINE | ELERCEREEEEE wl Ah gol TALTTTTT TT COCEING = EEGSSEEPEEH E N af {PNET “COANN) HES EH
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OPTEK TECHNOLOGY INC ObE D ff i778580 OO00173 O I Types OP600-0P604, OP640-0P644 T-4Yl-lo} Re SN Electrical Characteristics (TA = 25°C unless otherwise noted) ip] parameter [Win [Typ] Max] Unie [Tost Gandifons Tejonf® | Or State Coector Carat TPROOOPED | 0.50 mA | Vog= 60 V, by = 20 mien ‘ope0t-0Pe41 | 0.60 a0 mA | Vog~ 5.0 V, Eq = 20 W/cm ope02-0Pe42 | 2.0 60 mA | Voe=5.0V, Eg 20 mW ope0s-0re43 | 4.0 80 mA | Vee = 5.0 V, Eq = 20 Wiens ope04-ore44 | 7.0 2 mA | Vce~6.0¥, Eq = 20 mWicme Teen | Collector Dark Curent ‘PaO OPES |_| Vee = 10.0 V, E5 = - . OP40-0PBA Veg = 10.0 V, &y=0 pas france eet | te lem ope40-0P644 Ig = 100 pA Pa omer eee TL [ewe op640-0P644 ig= 100 pA 7 Gi Voc = 6.0 V, I¢ = 0.80 mA Pet ee CdS [ate Typical Performance Curves Collector Dark Current Normalized Collector Current Collector Currant vs. Ambient Temperature vs. Ambient Temperature vs. irradiance we 1 , Wes8v VY “OLA Festa JE oa Z| ©, [ircitope e-re A] [timers 7 |
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CCE ‘ZELTTTLY - ®t inate aera wets ot Rise and Fell Time Normalized Collector Current Switching Time vs. Load Resistance ta vs. Angular Displacement Tost Circuit all, see ‘ees LLL i Leto ose GE. (tien ZN | | | do feeamenaieZt | beste — _ gee’ cece ee een ce . at S as pooea EAA en : Cp seer LATS 60 ge 4 ae ~>ACCr rrr re) ° ALE TTTEN Se ge ak rr ra are ew + ub sneer id ; mera ‘TRW reserves the right to make changes at any time in order to improve design and to supply the best product a Iptoglectronics Division, TAW Electronic Components Group, 121! | Crosby Rd., Carrollton, 0 14) 1-200, 6716032 or 21584!