OP602TX OPTEK | Alldatasheet
Document overview
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Technical content
- Processed to Optek’s military screening program patterned after MIL-PRF-19500
- Miniature hermetically sealed package
- Wide range of collector currents
- Ideal for direct mounting in PC boards De scrip tion Each device in this series consists of a high reliability NPN silicon phototransistor mounted in a miniature glass lensed, hermetically sealed, “Pill” package. After electrical testing by manufacturing, all devices are processed to Optek’s 100% screening program patterned after MIL-PRF-19500. Typical screening and lot acceptance tests are provided on page 13-4. This device type is lensed and has an acceptance half angle of 18o measured from the optical axis to the half power point. The series is also mechanically and spectrally matched to the OP223 and OP224 high reliability series of infrared emitting diodes. Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted) Notes: (1) No-clean or low solids, RMA flux is recommended. Duration can be extended to 10 sec. max. when wave soldering. (2) Derate linearly 0.5 mW/o C above 25o C. (3) Junction temperature maintained at 25o C. (4) Light source is an unfiltered tungsten lamp operating at CT = 2870 K or equivalent source. Prod uct Bul le tin OP602TX/V Sep tem ber 1996 Hi- Reliability NPN Sili con Pho to tran sis tors Types OP602TX/V, OP603TX/V, OP604TX/V, OP604S Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396 13-30
Types OP602TX/V, OP603TX/V, OP604TX/V, OP604S Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble. Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396 Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted) Sym bol Pa rame ter Min Typ Max Units Test Con di tions IC(on) On-State Collector Current OP602TX,TXV OP603TX,TXV OP604TX,TXV, S 2.0 4.0 7.0 5.0 8.0 mA mA mA VCE = 5.0 V, Ee = 20 mW/cm2(3)(4) VCE = 5.0 V, Ee = 20 mW/cm2(3)(4) VCE = 5.0 V, Ee = 20 mW/cm2(3)(4) ICEO Collector Dark Current 25 100 nA µA VCE = 10.0 V, Ee = 0 VCE = 30.0 V, Ee = 0, TA = 100o C V(BR)CEO Collector-Emitter Breakdown Voltage 50 V IC = 100 µA, Ee = 0 V(BR)ECO Emitter-Collector Breakdown Voltage 7.0 V IE = 100 µA, Ee = 0 VCE(SAT) Collector-Emitter Saturation Voltage 0.40 V IC = 0.4 mA, Ee = 20 mW/cm2(3)(4) tr Rise Time 20.0 µs VCC = 30 V, IC = 1.00 mA, RL = 100 Ω tf Fall Time 20.0 µs 13-31