OP550A OPTEK | Alldatasheet
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Product Bulletin OP550A SP —_—_ June 1996 _——— Pr . NPN Silicon Phototransistors Types OP550A, OP550B, OP550C, OP550D ce COS we gym 4p 2.0 Pe aye Seas) a 220 (5. = ott 859 Q 120 (4.57) oe Pd te wees Uy ee TIL Spoxe» ne 8 tee Re aeeeeaeraee 020 (0.51) tom couecton [ 14) t thet Ri pla 015 (0,38) 99 SO 3 ies [pe ee DIMENSIONS ARE IN INCHES (MILLIMETERS) Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) limited applications. Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering A) 01 N00] Description Notes: - - . (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. The OP550 series devices consist of Max. 20 grams force may, be applied to leads when soldering. i ir (2) Derate linearly 1.33 mWP° C above 25°C. NPN silicon phototransistors molded in (3) right source is an unfiltered GaAs LED with a peak emission wavelength of 936 nm and a clear epoxy packages. The wide radiometric intensity level which varies less than 10% over the entire lens surface of the receiving angle provides relatively even phototransistor being tested. reception over a large area. The (4) To calculate typical collector dark current in yA, use the formula cep = 10° T*4) where side-looking package is designed for Ta is ambient temperature in ° C. easy PC board mounting of slotted optical switches or optical interrupt Typical Performance Curves detectors. This series is mechanically and spectrally matched to the OP 140 Typical Spectral Ri . . and OP240 series of infrared emitting ypical Spectral Response Coupling Characteristics diodes. of OP140 and OP550 : a . || || ee tA hi]. ef] i) BILL | 50 vA \\ Sos we OF s = 02 - TNE |] c 0 0 02 o4 06 os 10 o> of 2 DISTANCE BETWEEN LENS TIPS ~ Inches Wavelength - nm. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 3-22
Types OP550A, OP550B, OP550C, OP550D Electrical Characteristics (Ta = 25° C unless otherwise noted) [ SYMBOL PARAMETER [MIN | TYP |MAX|UNITS| TEST CONDITIONS _ | Ic(on) _ | On-State Collector Current OPS550D | 0.25 mA Opseon | 4.90 ait] ma. [Vce=5.0V, Ee= 1.0 mviem®® OPS50A_| 2.55 : mA Alc/AT _ |Relative Ic Changes with Temperature %PC |\\VcE=5.0V, Ee= 1.00 mWicm?, | . A= 935 nm Collector-Emitter Breakdown Voltage fa} | |v | 2 Collector-Emitter Saturation Voltage [joa] [| v | Ic = 100 pA, Ee = 1.0 mW/cm*) | 3 fe] Typical Performance Ci S ‘ypical Perform urves: Normalized Collector Current On-State Collector Current Normalized Collector Current vs. vs. Angular Displacement vs. Irradiance Collector to Emitter Voltage 1.0 a 100 31] 20 SeeeNeEE t yp TSF coon TAF m1 LT z,LL/7ELELIN |e V/A s | Sm Zeer es, ATTN & 2 LL eer Z 05 Ej Z 10 ty = 7 eee Boos hl \\ anny 7Zoenn 202|A Liem TN 2 on EY 2 Yeo DISTANCE 6° 5 LA Al 0 0.001 i -45 -35 -25 -15 -505 15 25 35 45 0.001 «0.01 Ot 1 10 100 ° 0 0.25 os 6 — ANGULAR DISPLACEMENT — Deg. Eg — IRRADIANCE — mWiem? Vce ~ COLLECTOR TO EMITTER — Volts Rise and Fall Time Normalized Output Switching Time vs. Load Resistance vs. Frequency Test Circuit 2400 - OS HY CIRCUIT 1 CIRCUIT 2 200 ff= 100 He -- — ease m N 160 | vax 1s VOLTAGE ACROSS A aan 2 i \\ ) xy > Fee OO OS es AX NS vr | am er FI v a yi 5) | z {OKT 1 - R= 10K 7 80 Coo a s VA 1002 SR 10083 | ggg \\ RE ‘Peet ENA eS - = -_* ou A Condens: o 2 4 6 8 WW 1 10 too 1.000 10,000 ips adjusted fr Vgut = 1 ot Ry — LOAD RESISTANCE — Kk FREQUENCY — KHz Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carroliton, Texas 75006 (972)323-2200 Fax (972)323-2396 3-23