OP535A OPTEK | Alldatasheet
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Product Bulletin OP535A SP TT June 1996 Ss SSsSSsSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSS Type OP535A, OP535B, OP535C Gag PROS 200 (5.08) oe cue ee SoS 050 (1.27) 185_(4.19) . . « a 180 (4.57) emrren ‘1 oe ey G Gee ee g 128(3.18) an LL X: mS BRE ae mis (2.82) \\~7 aT Ap : 78) eens 2025 (0.64) 69 typ His a MEASUREMENT. SURFACE -500 (12.70) Re: ce i ‘ DIMENSIONS ARE IN INCHES (MILLIMETERS) Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) * Small package size for space limited | Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering applications HOM]. cece cece cece eee ceeveeeetececveenenreererse, 260°C ription Notes: Descrip| (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. The OP535 consists of an NPN silicon Max. 20 grams force may be applied to leads when soldering. ~ (2) Derate linearly 1.33 mW/ C above 25°C. Photodarlington molded in a green — (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a plastic package. The narrow receiving radiometric intensity level which varies less than 10% over the entire lens surface of the angle provides excellent on-axis phototransistor being tested. coupling. These devices are 100% production tested using infrared light for close correlation with Optek GaAs and Typical Performance Curves GaAlAs emitters. Photodarlington devices are normally used in applications where light signal levels are Typical Spectral Response Coupling Characteristics low and more current gain is needed of OP165 and OP535 than is possible with phototransistors. 0 10 , FIAT ATT Replaces 2 aw /| os ‘ = ig = 20 ma OPS ane O08 3 | YT AL z [| eet | 2 s 5 0 A Sos . a \\ 2 Fa N 8 IN 40 ¥ 4 3 by Foz “EEE TTY LEE 1 I 0 0 oo 7m oo © m 0 0 02 08 06 08 10 DISTANCE BETWEEN LENS TIPS — Inches Wavelength - nm Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 3-18
Types OP535A, OP535B, OP535C Electrical Characteristics (Ta = 25° C unless otherwise noted) SYMBOL PARAMETER “MIN TYP MAX UNITS | TEST CONDITIONS Ic(on® | On-State Collector Current OP535C | 1.5 | | [Voce =5.0V, | ceo _|Collector Dark Current | | | 100 | nA |Vce=10.0V, Ee=0 | Vieryceo_|Collector-Emitter Breakdown Voltage | 15.0 | v Ic =1.0 mA, Ee=0 | Ver)eco | Emitter-Collector Breakdown Voltage 5.0 |_| v |le = 100 1A, E5e=0 | Vcesat)® |Collector-Emitter Saturation Voltage | | 14.10] Vv |Ic=0.4 mA, Ee = 0.13 mW/em® a 2 Typical Performance Curves 3 irq Collector Dark Current Collector Current Collector Current 8 vs. Ambient Temperature vs. Ambient Temperature vs. Irradiance 2 1,00 50 y © Fretsy [TIT Zo 1 e em a 7 = 1% a Pyare lott aol ti TTT yt 2 JLSE WIDTH - 100 ys. aa rT] z i Pourerie-om [|_| i El yA 2 10 8 [A+ es TT ity ttt BCOVECO | EBeZEES Ao da pepe ett) s*coy é r IA! LL] | or ae | bul YZ TTT te Bon rrttLe Ae Maan oe Py 0 3 50 ry 100 1250180 -60 -30 0 30 60) «90120150 0 05 10 15 20 25 30 35 40 45 Ta — AMBIENT TEMPERATURE ~ °C Th — AMBIENT TEMPERATURE ~ °% fe — IRRADIANCE — mW.em? Rise and Fall Time Normalized Collector Current Switching Time vs. Load Resistance vs. Angular Displacement Test Circuit 8 12 Eee ATES aye Eo [n-ne {ime ion | Sos towel COOP 2 + | uo -orzs0c 4 3 os ce 3p out peer 7) SEER EAEEE) 0 eae f @ t ma Bos fee - 2o2 A (| | INI I Bese “Les. Oo 2 4 6 8 10 40 30 2 10 0 0 20 30 40 Ay ~ LOAD RESISTANCE ~ Kk. 6 — ANGULAR DISPLACEMENT ~ Deg. Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 3-19