OP509A OPTEK | Alldatasheet

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Product Bulletin OP509 SP oo June 1996 — S—Xh NPN Silicon Phototransistors Types OP509A, OP509B, OP509C Be Ce | ei RA aan ff CREE 150 (3.81) 064 (1.63) Fea gi cn apvane ots ae ee es 140 (2.56) "060 (1.52) acm aie a ave a arr cs COLLECTOR ee \\_y eee ee ~~ 28 2.18) eee aeeee oS BS eae 165 (4.19) 1.31 [ 3 WA > ie -)-isces (D ae. le + fT pe ee eRe EMITTER 054 (1.37) _ 034 (0.95) — pasa Bas oe S00 (12.70) 9 0 (1.27) 030 (0.76) ee |: ae 025 (0.64) LENS R .030 (0.76) NOM So SER t sees: ee eos CIMENSIONS ARE IN INCHES (MILLIMETERS) . Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) ¢ Low cost plastic package Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering © Mechanically and spectrally matched TON] o.oo eee cece acces teste tev eeeateseerersess 260° Cl) infrared emitting diodes Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds max. when flow i soldering. Maximum 20 grams force may be applied to the leads when soldering, Description (2) Derate linearly 1.33 mW? C above 25° C. The OP509 series consist of NPN (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a silicon phototransistors mounted in radiomettic intensity evel whos varies less than 10% over the entire lens surface of the lensed, clear plastic, “end looking (4) To calculate typical collector dark current in yA, use the formula Iceo = 10°47", 34) where packages. The lensing effect of the Ta is ambient temperature in ° C. package allows an acceptance half angle of 25° measured from the optical Typical Performance Curves axis to the half power point. Typical Spectral Response Coupling Characteristics of OP169 and OP509 0 — ‘0 . Vee=5¥ eft AL) BILE § 0 A 3 os z \\ 2 d \\ 5 0 gos 2 E 3 = 02 @ N

7 PNET

= ™ w. eel th = OISTANCE BETWEEN LENS TS ~ Inches favelength - nm a Optek Technology, Inc. 1215 W. Crosby Road Carroliton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 3-16

Types OP509A, OP509B, OP509C Electrical Characteristics (Ta = 25° C unless otherwise noted) SYMBOL PARAMETER min | TYP |MAX|UNITS| TEST CONDITIONS | Ic(on) _|On-State Collector Current OPsosc | 0.7 Vce = 5.0 V, Ee = 5 mWicm*) OPS09B | 1.4 10.6 | mA OPS509A 57 Ic/AT Relative Ic Change with Temperature PC Vce=5.0 V, | Ee = 1.0 mWicm*™), 2 = 890 nm Iceo _ |Collector-Dark Current |_| 100 |_na_|Voe=100V, Ee= 0" | Veryceo Collector-Emittor Breakdown Voltage | 30 Ff fl Io = 100 pA { iz Ver)Eco |Emitter-Collector Breakdown Voltage [so] | | le = 100 pA | 3 | Vcesat) |Collector-Emitter Saturation Voltage | [joo] v | Ic = 250 HA, Ee = 5 mW/em?™ Fy - = _L. j=" 2 3 Typical Performance Curves a Normalized Collector Current On-State Collector Current Normalized Collector Current vs. vs. Angular Displacement vs. Irradiance Collector to Emitter Voltage = Vien pe ate, d= 890 am es [t/t tT iT zg ; 5 WZ Z 8 LC | | | elgg | nr OK Sas WZ 2" i bi ney ZZe088 FA = 890 nm EA Fi fy as Ae XK] #mE4 2 LU Meri P| tens to tens rN {7 = TGS

01 DISTANCE = 6° z V4 3 7 Za

LI = 5 000 A © LMT TTT Tre | 45 30 15 o 15 30 45 0.001 = 0.01 on 1 10 100 0 0.25 Os @ — ANGULAR DISPLACEMENT ~ Deg. fe — IRRADIANCE — mWicm? Vee — COLLECTOR TO EMITTER — Volts Rise and Fall Time Normalized Output Switching Time vs Load Resistance vs. Frequency Test Circuit

240 Pyce=5v 10 ES corcuIT 1 curcurt 2

z = 100 Hr = = ' PW=1 ms Yt «| 2 60 Ue = 0F280¢ B d= 050 90 A\\_|-] 5 1 F ‘Vat = is voltage across Ri £ F i eS 4ane 5 \\ *| $e 3 120 PT] oH aw Sos A\\\\ Vout 5 st Sa 3 i¢ \\\\ OKT 1 - Ry = 10 2 ar ~~ 1 gy et fo : JK von #% 1000 lias) 3% sol || KA 1 L ii iz et Conditions: aaa - : peda I as wona tees 0 2 4 6 8 10 1 10 100 = 1,000 10,000 ig is adusted for Vout = 1 Vol. Ay — LOAD RESISTANCE ~ A? FREQUENCY — Kite Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 3-17