OP509 OPTEK | Alldatasheet
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OPTEK TECHNOLOGY INC ObE D | | 6794580 Gooo1S4 7 I Optosiectronice Division nm Lhd TAW Electronic Components Group . a a vy Product Bulletin 6114 January 1986 “T41+1o) ape . NPN Silicon Phototransistors - : Types OP509, OP509SLD, OP509SLC annae ai _——; masons a ces er, saat Features Absolute Maximum Ratings {Tq = 25°C unless otherwise noted hole centers Storage end Operating Temperature Range «-s-v-vvve-cvvvsevvsssevsvevsvssvss 40°C to + 100°C © Mechanically and spectrally matched to the POW OiSSQAL0N «se... cssssevsscssssescssstsvescevssscsaserssernoversssces HOO iN OPIGGSL and OPZEQSL series of infrared Mots: cnr bein on oe ter rg ts it i cmd, Darin can bo extended to 10s. x. wn emitng diodes (2 Dental 153 mC soe 2°, “ee Description (0 Up seve nore! tte 7 = 270% or i aed Tha OF609, OPSOBSLO, and OPGOQSLC each Tees yen eer cnet ba tr gg = On wr nb nga consist of an NPN sion phototransistr mounted it . ine lansed, clear plastic, end lacking package. The lensing effect of the package allows an Typical Performance Curves acceptance half angle of 25° measured from the Photosensor Spectral Response Coupling Characteristics optical axis to the hat power point. sco __Y# GaAIAs and GaAs vo if OP16981 and oPé09 ‘a a taL| [NI wl PE ce folAL | os PAP NIN | EAT TT TT i. Sma\\e i, Nee (LLAANNA JOLLET I oo 70 eo aco 1001100 0a a os os 1 = NAYENGTH ~Hnsten OUTANCE BETWEEN OT — cn tet nin 041,129, =o ay Fea ee Ae 1 3009 Bohr ee rar ‘ptowletranes Divsion, TAW Elecirante Components Group, 1216 W. Crosby Rd., Caralton, 1X TEO0G TOTaY S25 2000, TUX OT TOUND or T1660 s
OPTEK TECHNOLOGY INC ObE D Mu7sasao oooo1ss 4 | Types OP509, OPSO9SLD, OPSO9SLC T-4)-bo) SO Electrical Characteristics [Ta ~ 25°C unless otherwise noted) _ TIONE® | Or State Colector Current OPe0s | 0.060 Vee = 60 V, f= 1.00 milan - OPSOSSLD | 0.170 ‘Vee = 6.0 V, Eq = 1.00 mem . OPSOSSLC | 0.30 Vog = 6.0 V, Eq = 1.00 mWiemt4 [aia — [Ra Carer wi Tenpoanee || MRO [PO Veg 0, y= 10 mle N= BFE Am | [ieeg Yer Oo Curee TY A gto eo [ Visneo | Ceaser Srestiawn Voge ot | | V [e-ta . Typical Performance Curves Normalized Collector Current On-Stete Collector Current Normalized Collector Current vs. vs. Anguler Displacement vs. Irradiance Collector to Emitter Voltage =~ u we 3 Py Toyo tT Tt ri wy zi women” TT | id pA of ER py eZ a : yi town | Zeer | se WA eaanyZcson ee OX 4 SEL By rae a Me. Cor AZ 2° Tome Ne ee CBee ov ses. TS i EZ val scat cual ad * EZR i “TIT Eu, tad i io” 2cceeeee eee ‘re one Pa on rm 2 oti aducer 2 te ea oe? Yer — CEH TE Rise and Fall Time Normalized Output Switching Time vs. Load Resistance vs. Frequency Test Circuit M0 = Yo eH arcu 1 ‘cancumT 2 Westy [tt] y rr ee oe Monk Cor x a $2 Tree ne aa <| ‘ th 99-17 m+ + 4 2. COCCCere os A Your ecard PP Vles (Cre ai ies ames icc) eg a KALI Lt od Pa Ke Yo. eC Cee : petra iS eum veces 0 2 4 a o 0 1 10 too 1,000 10,000 ‘ee eta fr Vout ~1 Yo. iy ~toio estie id meu — me ‘TRW reserves the right to make changes at any time in order to improve design and to supply the best product possible. Thtoslectrones Division, TRW Electronic Components Group, 1215 W. Crosby fa, far Tx 76006 1214) 323-2000, "TDK 6710090 or 216040