OP508FA OPTEK | Alldatasheet
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Product Bulletin OP508F SP _—— June 1996 Se SSSSSSSFSSSSFSFSFSFSFSsSsSSSSSSsSSSsSsSsSsssemF Types OP508FA, OP508FB, OP508FC poe (ih aaaes Pe ace Us ee sere — coutecton: = St eg Gd 2 eer a etal wey 080 (2.23) PN ves (419) 100 fe se) | ee) St ear ees he Tis5 (3.94) Now * ee enirten SOO eT BSE BN sien area 025 (0.64) 6 soy 035 (0.89) he ee at ve oe Pe ee foes ‘015 (0.38) ‘500 (12.70) 025 (0.64) Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) « Low cost plastic package Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering 4 © Mechanically and spectrally matched WON]... eee eee eect eee eee eee ea eet e ete eeeeee ene en cess s 260° CU) infrared emitting diodes Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds max. when flow inti soldering. Maximum 20 grams force may be applied to the leads when soldering. Description (2) Derate linearly 1.33 mW/? C above 25°C. The OPSO8F series consist of NPN (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a il hototransist. dd in flat radiometric intensity level which varies less than 10% over the entire lens surface of the sillcon phototransistors mounted In flat, phototransistor being tested. black plastic, “end looking” packages. (4) To calculate typical collector dark current in »A, use the formula Iceo = 10!°%4°%,34) where The flat sensing surface allows an Ta is ambient temperature in ° C. acceptance half angle of 60° measured from the optical axis to the half power Typical Performance Curves point. The black plastic package significantly reduces ambient light noise. These devices can be mounted on Typical Spectral Response Coupling Characteristics 0.100" (2.54 mm) hole centers, making of OP168F and OPS08F them an ideal low cost alternate to ™ 30 hermetic OP600 sensors. linn Pd 0. < 25 LLL 3 20 ae it \\ 1 io Bis Fi FLY TT 8 0 5 i 5 {| KE | TI en ~ 05 \\ | Pw 0 0 ee oo mm oo © wm 10 0 02 of 08 08 10 DISTANCE BETWEEN LENS TIPS — Inches Wavelength - nm Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 3-14
Types OP508FA, OP508FB, OP508FC Electrical Characteristics (Ta = 25° C unless otherwise noted) SYMBOL | _ PARAMETER [MIN|TYP|MAX[UNITS] _TESTCONDITIONS | | Icon) |On-State Collector Current OP508FC | 0.34 Voce = 5.0 V, Ee = 5 mWicm*9) OPS508FB | 0.65 OPS508FA | 2.70 Ic/AT _|Relative Ic Change with Temperature %PC \\VcE=5.0V, Ee = 1.0 mW/em?®) , = 890 nm — Collector-Dark Current [|_| 100 | na | Vee = 10.0 V, Ee = 0% o | VieR)Eco Emitter-Collector Breakdown Voltage [so} | |v | le = 100 pA Fa Collector-Emitter Saturation Voltage L_[__ [oso] v_fie= 100A, Ee = 5 mwiom®®) & Typical Performance Curves - Normalized Collector Current On-State Collector Current Normalized Collector Current vs. vs. Angular Displacement vs. Irradiance Collector to Emitter Voltage E09 rt yr |N_t_I = 10 Ee cans 4 FA A: Offset Region (~ 30 iy ISS = 07 21 Yi a a a oO eT 7 y TNT I 5 lL) & MY Soro er yr] | AaN 2 ggzere eT] a 1 ls nny 722088 BLT ge sv" l\\ | 2 oo z || Aer wit em Ig EY | | ld 6 Ree . STANCE = 67 é GA an LN 5 ooo, OA * LleeiT TT tii ty) so 60 3 0 30 60 990 0001 001 0.1 1 10 100 0 025 05 6 — ANGULAR DISPLACEMENT — Deg, Eq — IRRADIANCE — mWicm? Veg — COLLECTOR TO EMITTER — Volts Rise and Fall Time Normalized Output Switching Time vs Load Resistance vs. Frequency Test Circuit 240 (ycc=sv aap 0 ee vRU=1¥ ‘| emo | ate wa INA comune p PW=1 ms 1 Vt 4 Mee * c Fa Leo =0r290c @ d= 890 0m [7] || 5 1 & 160 1 var=is voltage across RY) PPT | = = svat TT & t é 3 a FI FA OKT 1 = Ry = 10K Your Pre aaa é t tai Ai ian HH we oon gM 10005 Jura F% 20 A AH LuS EEU ail Cor F m4 eee by o 2 « 6 8 Ww 1 1 100 1000 10000 Tas anions Ry — LOAD RESISTANCE ~ kO FREQUENCY ~ Kir ' ttt sos een ot and ty 500 ma. Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 3-15