OP506A OPTEK | Alldatasheet

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Product Bulletin OPS06A SP oT June 1996 ee Types OP506A, OP506B, OP506C, OP506D é Se wae NEASUREMENT SURFACE (NOTE 3) eg Se ae g 185. (4.19) “Teo (4-57) 145 (3.68) Sel 9) BEC ae T [a ee ‘ Bas ae P15 38) $00 (12.70) 030 (0.75) ei et win nom 3 i‘ DIMENSIONS ARE IN INCHES (MILLIMETERS) Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) Small package size for space limited Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering 1 applications Co) 260°C! ipti Notes: Description (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. The OP506 series devices consist of Max. 20 grams force may, be applied to leads when soldering. i a (2) Derate linearly 1.33 mW/° C above 25° C. NPN silicon phototransistors molded in (8) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm anda blue tinted epoxy packages. The narrow radiometric intensity level which varies less than 10% over the entire lens surface of the receiving angle provides excellent phototransistor being tested. on-axis coupling. These devices are (4) To calculate typical collector dark current in uA, use the formula Icep = 10°) where 100% production tested using infrared Ta is ambient temperature in ° C. light for close correlation with Optek’s Typical Perf c GaAs and GaAlAs emitters. Lead ypical Performance Curves spacing is 0.100" (2.54mm). Typical Spectral Response Coupling Characteristics of OP166 and OP506 TIARA 2 0 vA \\ 08 \\ oe] VIAL] BASE S # ] 5 N 2°V Z| | etd BOOT EAB ee Litt |

0 DISTANCE BETWEEN LENS TIPS ~ Inches

Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 3-10

Types OP506A, OP506B, OP506C, OP506D Electrical Characteristics (Ta = 25° C unless otherwise noted) [ SYMBOL | PARAMETER [min | TYP |MAX[UNITS| TEST CONDITIONS loon) |On-State Collector Current OPS506D| 0.55 mA |Vce=5 V, Ee = 0.50 mWicm\\4) OPS506C} 1.10 3.00| mA |Vce=5V, Ex = 0.50 mWiem’"4) OP506B | 2.15 5.95 | mA |Vce=5V, Ee = 0.50 mWicem2®) OPS506A | 4.30 mA _|Vce=5V, Exe = 0.50 mWicm™) | | Alc/AT \\Relative Ic Changes with Temperature | [100f | wc] Vce=5V, Ee=1.0 mW/em? loco _|Gollector Dark Current |_| [100 | oa Wenetovcesel? | | Vier)ceo | Collector-Emitter Breakdown Voltage 30 [| jf vi Io = 100 pA | Vier\\eco | Emitter-Collector Breakdown Voltage 5.0 | _V__ jie = 100 pa 2 | Vce(sat) |Collector-Emitter Saturation Voltage 040} Vv lIc = 250 mA, Ee = 0.50 mW/em? | 3 | \\a = 935 nm Ie _ 1 AES — —EH Typical Performance Curves is Normalized Collector Current vs On-State Collector Current vs Normalized Collector Current vs Angular Displacement Irradiance Collector-to-Emitter Voltage " i Ez 20 Teatontiong aso [1] ge’ z GA F A: Offset Region (~30 mv] > Lz 2 2 B is fi re Fs PL LIAL s Vi B Ls vcesan at fine le. 1 A Sos 3 y S| decnnses as opteal’ QE | s s ! 4 8 input inctonses A SEER bE TG COCOA i» ee! Zannue "CEPT TISCE fw bZbulululid = * TEAR EREE o bet MN $000 aS’ 4S 40 30 2 10 0 10 2 30 40 oor oor or T0100 0 0.25 05 6 — ANGULAR DISPLACEMENT — Deg. Ey — IRRADIANCE — mitten? Vee — COLLECTOR TO EMITTER - Volts Rise and Fall Time Normalized Output Switching Time vs Load Resistance 1 vs Frequency Test Circuit 240 Tyccasv [Ill] Sas! cuRcuIT 1 cuncutT 2 em | ate mA \\ PS CKT 2 - RF=10K rf vec=5V 0k veo=5¥ hy PW=1 ms DEH <I = = FA LED =0P2900 @ X= 820 nm 5 pes as AX A an err Tiet tar) V #,ClLl A lowet [| 3 TCT se BA\\ oon $A TON F hag FH Fal “ee KA \\

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t LTT tT itt ty 0 ies ae a = Test Conditions: o 2 4 6 8 10 1 10 100 1,000 10,000 Light source is pulsed LED with ty and ty < 500 ns. Ry — LOAD RESISTANCE — kf FREQUENCY — KHz If is adjusted for VouT = 1 Volt. Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 3-11