OP505D OPTEK | Alldatasheet
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Product Bulletin OPSOSA a} June 1996 ———— eee Infrared Selected NPN Silicon Phototransistors Types OP505A, OP505B, OP505C, OP505D “eet ll ~ * eam o 2. (3.18) —— (2) Tis (2.50) 1 a al COLLECTOR T eS £9.64) 5, me H man EC O18 (0.38) * ; MEASUREMENT SURFACE +500 12.700 i ; DIMENSIONS ARE IN INCHES (MILLIMETERS) e Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) © Narrow receiving angle Collector-Emitter Voltage... ec ss ce ccee erect eseerencncseseeesrsness SOV © Small package size for space limited Lead Sokdering Temperature [1/16 inch (1.6 men) from case for § sac. with eoklering Notes: Description (1 EAA fiat le lecomianened, Duration cam be entencied to 10 6c. mar. when fow ackderieg. The OP505 series devices consist of jax. 20 grams applied to leads soldering. NPN silicon phototransistore molded in (2 Dara ry 3 a yaveungh fe nm ane blue tinted epoxy packages. The narrow radiometric intensity level which varies less than 10% over the entire lens surface of the receiving angle provides excellent phototransistor being tested. ‘on-axis coupling. These devices are {4) To calculate typical collector dark current in WA, use the formula Icep = 10° Ta?) where 100% production tested using infrared Tals amblent temperature in °C. lah for close correlation with Optok’s Typical Pe! Curves Replaces Typical Spectral Response Coupling Characteristics K5S00 Series OP165 and OPS05 wo 12 i, RAE | E || i EEN i: OOS , LL | tI -” ™m™ oo © m wm © 02 oF C8 O8 18 GISTANCE BETWEEN LENS TS = Inches Wavelenath - nm
Types OP505A, OP505B, OP505C, OP505D Electrical Characteristics (Ta = 25° C unless otherwise noted) SYMBOL PARAMETER MIN | TYP [WAX[UNITS] TEST CONDITIONS] loon) | On-State Collector Current OP5O5D | 0.55 Vee =5V, Es = 0.50 mivicm™*) OP50SC | 1.10 3.00 Voe = 5 V, Ee = 0.50 mwWicm™) OPSOSB | 2.15 5.95 Voce = 5 V, Ex = 0,50 mwicm*®) ; OPSOSA | 4.30 Vor = 5 V, Ex = 0.50 mwiom™*) ] delet Patan Chanqn wn Tepemnee 4.00 oe ba me | 7 7 A= 935 nm | eco [Cotector Dark Curent | nA _|Vce = 10.0V, Ea = 0% |_Vericeo |Cotector-Emiter Breakdown Votage | 30 | | | ~V icmt00ud | Vemeco_ [Emit Colecor Breakdown Vokoge es ee [oon frvewreeme TED eee | A= 935 am Typical Performance Curves Normalized Collector Current On-Stete Collector Current Normalized Collector Current vs. i vs. Anguler Displacement eo vs. Irradiance 7 Collector to Emitter Voltage : ? 4 | LE eee tt oT ieee ey FSET BEM EER YS ‘erat ee : VI TT} ES 4 immnr Zee belt | PET ZA 4 3g Bas =e ay ha: ERE? 44a088 | ant & SK S80 7088 BLE ALA I LI] fe i Zeer eT TE INN EAL io” Zaneneee 40 3 2 1 6 20 3 40 ooo Oe oft ' 1 180 . ozs Os @ — SAQULAR DISPLACEMENT ~ Deg fy ~ RRADUANTE ~ wiiiery Vek = CORLECTOR TO EMITTER ~ Potts Rise and Fall Time Normalized Output Switching Time vs. Load Resistance : vs. Frequency Test Circuit 7 = 8 pee Crowt 2 ’ We ins Bm 4 WSO ~ P2H0t @ d= wd ew " a Coop ett as _Al ONS ar | ewer Pe so Heer wae “Pee 4 2s Fi Vee eel eee Eph Se Temas wih way «500 ® 2 ‘ e 4 i) ' i] 10 1.000 = 10,800 1 te eerned bee Vout ~ 1 Yee ® — WAD REDSTAMCE ~ 10 FREQUENCY — Kir meme + wermreregyge ome ante tee enemy Fe erwin, Hones su \\repeoecw PUR (U1 6)/32-2590 OO EEE