OP500

OP500 OPTEK | Alldatasheet

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Technical content

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 3 23-2396 sensors@optekinc.com www.optekinc.com Issue A.4 02/09 Page 1 of 5 Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA Description: Each of these devices consists of a NPN silicon phototransistor mounted in a miniature SMT package with a 0805 size chip carrier that is compatible with most automated mounting and position sensing equipment. Both OP500, OP500DA and OP501, OP501DA have a flat lens. OP501 and OP501DA has an opaque lens that shields the device from stray light, whereas OP500 and OP500DA has a water clear lens. All devices have a wide viewing acceptance angle and higher collector current than devices without lenses especially on the OP500DA and OP501 which incorporate photo darlington die instead on the standard transistor. OP500, OP501, OP500DA and OP501DA are mechanically and spectrally matched to the OP200 series infrared LEDs. Features:

• High photo sensitivity
• Fast response time
• 0805 package size
• Phototransistor or Photo Darlington Output
• Choice of opaque or water clear flat lens Applications:
• Non-contact position sensing
• Datum detection
• Machine automation
• Optical encoders OP501,DA OP500,DA

Ordering Information

Part Number Sensor Viewing Angle Lead Length OP500 Phototransistor 150° N/A OP501 OP500DA Photo Darlington 150° OP501DA OP500, OP501, OP500DA, OP501DA OP500 OP501 OP500DA OP501DA Pin # Transistor

1 Collector

2 Emitter

Recommended Solder Pad Patterns COLLECTOR SENSOR DICE RoHS Moisture

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 3 23-2396 sensors@optekinc.com www.optekinc.com Issue A.4 02/09 Page 2 of 5 Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA Absolute Maximum Ratings (TA=25°C unless otherwise noted) Storage Temperature Range -40o C to +100o C Operating Temperature Range -25o C to +85o C Lead Soldering Temperature(1) 260° C Collector-Emitter Voltage OP500, OP501 OP500DA, OP501DA 30 V 35 V Emitter-Collector Voltage 5 V Power Dissipation(2) OP500, OP501 OP500DA, OP501DA 75 mW 100 mW Collector Current OP500, OP501 OP500DA, OP501DA 20 mA 32 mA Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. Derate linearly at 2.17 mW/° C above 25° C. 3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. 4. To calculate typical collector dark current in µA, use the formulate I CEO = 10(0.04 t - ¾), where TA is the ambient temperature in ° C. Electrical Characteristics (TA = 25°C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode IC(ON) On-State Collector Current OP500, OP501 OP500DA, OP501DA 0.1 10.0 mA VCE = 5.0 V, EE = 0.15 mW/cm2 (3) VCE = 5.0 V, EE = 0.15 mW/cm2 (3) VCE(SAT) Collector-Emitter Saturation Voltage OP500, OP501 OP500DA, OP501DA 0.3 1.0 V IC = 100 µA, EE = 1.0 mW/cm2 (3) IC = 1 mA, EE = 0.15 mW/cm2 (3) ICEO Collector-Emitter Dark Current - - 100 nA V CC= 5.0 V (4) VBR(CEO) Collector-Emitter Breakdown Voltage OP500, OP501 OP500DA, OP501DA 35 - - V I C= 100 µA, EE = 0 VBR(ECO) Emitter-Collector Breakdown Voltage OP500, OP501 OP500DA, OP501DA V IE= 100 µA, EE = 0 IC= 100 µA, EE = 0 tr, tf Rise and Fall Times OP500, OP501 OP500DA, OP501DA - 15 60 µs IC= 1 mA, RL = 1KΩ IC= 1 mA, RL = 1KΩ

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 3 23-2396 sensors@optekinc.com www.optekinc.com Issue A.4 02/09 Page 3 of 5 Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA OP500, OP501 900 1100 1000 20% 40% 60% 80% 100% Relative Response Wavelength (nm) Relative Response vs. Wavelength 800 700 600 500 400 OP501, OP501DA OP500, OP500DA -25 0 25 Temperature—(°C) Collector-Emitter Dark Current (nA) 1000 50 75 100 100 Conditions: Ee = 0 mW/cm2 VCE = 10V IC(ON) - On-State Collector Current (mA) 0 1 2 3 4 5 Collector-Emitter Voltage (V) 0.40 0.60 0.80 1.00 1.20 0.20 1.40 1.60 1.80 2.00 3 mW/cm2 2.5 mW/cm2 2 mW/cm2 1.5 mW/cm2 1.0 mW/cm2 0.5 mW/cm2 Relative On-State Collector Current – Ic (mA) vs. Collector-Emitter Voltage—V CE (V) Collector-Emitter Dark Current vs. Temperature-TA

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 3 23-2396 sensors@optekinc.com www.optekinc.com Issue A.4 02/09 Page 4 of 5 Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA OP500, OP501 Relative Collector Current Relative On-State Collector Current vs. Irradiance—Ee (mW/cm 2) 0 1.0 2.0 3.0 4.0 Ee—Irradiance (mW/cm 2) Relative Collector Current 80% 100% 120% 140% 160% Relative On-State Collector Current-IC (mA) vs. Temperature-TA -25 0 25 50 75 100 Temperature—(°C) 60% 40% 5.0 6.0 7.0 90% 100% 110% 120% 130% 80% 70% 140% 8.0 20% Normalized at Ee = 5mW/cm2 Conditions: VCE = 5V, λ = 935nm, TA = 25 °C Normalized at TA = 25°C . Conditions: VCE = 5V, λ = 935nm, TA = 25 °C OP500DA, OP501DA Collector-Emitter Dark Current vs. Temperature-TA -25 0 25 Temperature—(°C) Collector-Emitter Dark Current (nA) 1000 50 75 100 100 Conditions: Ee = 0 mW/cm2 VCE = 10V IC(ON) - On-State Collector Current (mA) Relative On-State Collector Current – Ic (mA) vs. Collector-Emitter Voltage—V CE (V) 0 0.5 1.0 1.5 2.5 3 Collector-Emitter Voltage (V) 12.5 15.0 17.5 10.0 1.2 mW/cm2 1.0 mW/cm2 0.8 mW/cm2 0.6 mW/cm2 0.4 mW/cm2 0.2 mW/cm2

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 3 23-2396 sensors@optekinc.com www.optekinc.com Issue A.4 02/09 Page 5 of 5 Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA Relative Collector Current—% 0 0.50 1.0 Irradiance- Ee(mW/cm2) Relative Collector Current—% 100% 120% 140% 160% -25 0 25 50 75 100 Temperature—(°C) 80% 60% 1.5 90% 100% 110% 120% 130% 80% 70% 140% 2.0 40% Normalized at Ee = 1mW/cm2 Conditions: VCE = 5V, λ = 935nm, TA = 25 °C Normalized at TA = 25°C . Conditions: VCE = 5V, OP500DA, OP501DA Relative On-State Collector Current vs. Irradiance—Ee (mW/cm 2) Relative On-State Collector Current-IC (mA) vs. Temperature-TA