OP294 OPTEK | Alldatasheet

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Technical content

  • Characterized at 5mA for battery operated systems or other low drive current systems
  • Wide irradiance pattern (OP294) or narrow irradiance pattern (OP299)
  • Significantly higher power output than GaAs at equivalent drive currents
  • Wavelength matched to silicon’s peak response
  • T-1 3/4 package De scrip tion The OP294 and OP299 are gallium arsenide infrared emitting diodes designed for low current or power limited applications (such as battery supplies). These LEDs are similar in design to the OP290 and OP295 but use a smaller chip which increases output efficiency at low current levels by increasing current density. Light output can be maximized with continuous (d.c.) forward current up to 100mA or with pulsed forward current operation up to 750 mA. The chip is mounted in an IR transmissive plastic package and has been designed and tested for use with OP593/598 phototransistors or similar photodetector. Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted) Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. A max. of 20 grams force may be applied to the leads when soldering. (2) Derate linearly 1.80 mW/o C above 25o C. (3) Ee(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.250" (6.35 mm) in diameter, perpendicular to and centered on the mechanical axis of the lens, and 1.429" (36.3 mm) from the measurement surface. Ee(APT) is not necessarily uniform within the measured area. (4) Ee(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.250" (6.35 mm) in diameter, perpendicular to and centered on the mechanical axis of the lens, and .500" (12.7 mm) from the measurement surface. Ee(APT) is not necessarily uniform within the measured area. (5) Cathode lead is 0.070" nominal shorter than anode lead. Prod uct Bul le tin OP294 June 1996 GaA lAs Plas tic In fra red Emit ting Di ode Types OP294, OP299 Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396 2-56

Types OP294, OP299 Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble. Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396 Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted) SYM BOL PA RAME TER MIN TYP MAX UNITS TEST CON DI TIONS Ee(APT) Apertured Radiant Incidence OP294 OP299 0.50 0.15 1.50 0.45 mW/cm2 mW/cm2 IF = 5 mA(4) IF = 5 mA(3) VF Forward Voltage 1.50 V IF = 5 mA IR Reverse Current 10 µA VR = 2 V λp Wavelength at Peak Emission 890 nm IF = 10 mA B Spectral Bandwidth Between Half Power Points 80 nm IF = 10 mA Δλp/ΔT Spectral Shift with Temperature +0.18 nm/o C IF = Constant θHP Emission Angle at Half Power Points OP294 OP299 Deg. Deg. IF = 10 mA IF = 10 mA tr Output Rise Time 500 ns IF(PK) = 100 mA, PW = 10 µs, D.C. = 10%tf Output Fall Time 250 ns 2-57