OP269A OPTEK | Alldatasheet
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—SSsSsSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSS Types OP269A, OP269B, OP269C ANCOE 140 (3. =T I 060 (1 =T eek aS sass 8 i S. . ourrane 054 (1.37) | 034 (0.86) t RS nr 899 1g 7 % “050 (1.27) 030 (0.78) : By 025 (0.64) LENS R .030 (0.76) NOM i ia O1S (0.38) Se. NOM os oe / : a = * FOR IDENTIFICATION PURPOSES. ANODE 15 . 060 (1.52) NOM LONGER THAN CATHODE LEAD. DIMENSIONS ARE IN INCHES (MILLIMETERS) Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) to the OP509 phototransistor series Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering . WON) eee eee eee eee cette eee eee eeeenat eres ss 260°C - Notes: The OP269 series are gallium aluminum (1) AMA flux is recommended. Duration can be extended to 10 seconds max. when flow arsenide infrared emitting diodes molded soldering. Maximum 20 grams force may be applied to the leads when soldering. in “end looking” miniature clear (2) Derate linearly 1.33 mW/° C above 25°C. (3) Eeiarr) is a measurement of the average apertured radiant incidence upon a sensing area Packages. ine molded lens neni 0.180" (4.57 mm) in diameter, perpendicular to and centered on the mechanical axis of the improved uniformity of lens magnification lens, and 0.653" (16.6 mm) from the lens tip. Esp is a measurement of the average from unit to unit. The OP269 series radiant intensity within the cone formed by the above conditions. Eoiapt) is not necessarily provides a broad range of on-line and uniform within the measured area. radiant intensities and has considerable . design flexibility due to its small size. Typical Performance Curves These devices are mechanically and . . . . oe spectrally matched to the OP509 series Percent Changes in Radiant Intensity Coupling Characteristics of phototransistors. The wavelength at vs. Time to of OP269C and OP509 peak emission for this series is 890 nm. eT o KA So rH ie =20 ma . SSS iat _ 08 \\ tacso \\ mn eet g mn mest eatienncar ee : EHH HIP ge Cees TC b vereowrtos || 11 TTT KI vo DE TTT TT »>L Pee 100 1K 10K 100K 0 02 os 06 08 10 1 — TIME — Hours DISTANCE BETWEEN LENS TIPS — Inches a Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 2-46
Types OP269A, OP269B, OP269C Electrical Characteristics (Ta = 25° C unless otherwise noted) [Symeot| PARAMETER ———*([ MIN] TYP [MAX] UNITS |" TESTCONDITIONS | [Eeiapn) | Apertured Radiant incidence ‘op269c | 0.34 | | OP269B | 0.42 | mWiem? |Ie = 20 ma | OP269A | 0.58 | [ove [Fowaavowge SL 80] vip 20 ma | Wavelength at Peak Emission 890 Ip=20mA gES ip 20° [5 Teandvichetveon Hat PowerPons || 20 |_| nm |iratoma Spat |spectal SitwnTomperaure | sae || te Constant | aoe Enisson Ange stHalPowerrans || «© | | Oe [re2oma | [louputricotine || 00 |g fie = 100m Typical Performance Curves Forward Voltage vs. Forward Voltage and Radiant Incidence Forward Voltage vs. Forward Current ; vs. Forward Current Ambient Temperature 16 1s 20 oP ets COI | [00 ewer pe. a0 5 = 18 fou cyee ors [| gu Cat ‘Uses oe ee [|| nS ll ce <0 oe eco Tg eereere Bog PCO Te 4 PVs eee TTL iil ba 2 i ee | eat o . + 2 [py eS oT i} i ee Pe ay “10 0 109 00204 08 08 10 0-0 0 © 0 10 160 ie ~ FORWARO CURRENT ~ mA it~ FORWARO CURRENT ~ Ags Ta AMBIENT TEMPERATURE = *¢ Rise Time and Fall Time vs. Relative Radiant Intensity and Wavelength Relative Radiant Intensity vs. Forward Current at Peak Emission vs. Ambient Temperature Angular Displacement 8 2 950 Ww wi | fin qyses to . ane pose Wa 100 48 -.” Va tL IN [| Hs Q zB 8 | | a" CT 7 Lf Pan | | | Ne, Lt en 3 os f Bess PHAR see Perr) ae eS of TLL I ee ° LETT TT TT ,,* 0 0 100 200 300 50-25 0 28 $0 75 100 125 so 40° 20" «0 20° «40° 60" ie ~ FRWARO CURRENT ~ mA Ta = anu PERATURE = % 11 ANGULAR DISPLACEMENT ~ Ores Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 2-47