OP269 OPTEK | Alldatasheet
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OPTEK TECHNOLOGY INC ObE D I 6794580 go001eb 2 I Optoelectronics Division . rf aaa . TAW Electronic Components Group T—4) -13 7 7try Product Buletin 6068 January 1986, GaAlAs Plastic Infrared Emitting Diodes Types OP269SLC, OP269SLB, OP269SLA won at ~ 2852.18. . tg i | T SHES EW CHS MLNETES sm yoy mo et re eA) i an ee L guage '® FOR IDENTIFICATION PURPOSES, ANODE LEAD 5S .060(1.62) NOM. LONGER THAN CATHODE LEAD. Features Absolute Maximum Ratings (7, ~ 26°C unless otherwise noted) Mechancly end spectrally Storago and Operating Temperate Range, -.scscsvovvvvsssscssvvvvewsssoccosveO® 10 610% Notes: Description tna ffux is recommended. Duration can be extended to 10 seconds max. when flow soldering. Frac fe gefum aminum aside ees teen escape gered at ce a nt wn 010" 46 a den infrared emitting diodes molded in “end-looking” ere io " meter improved urifrmty of lens magnification fom ram wa menue unit to uit. The OP269SL seis provides abroad range of onine and radiant intensities end hes Typical Performance Curves ese ots ae nace and cece Porcant Changes in Radiant intensity Coupling Characteristics matched to the OP609 photowrensistor series. The va. Tima to ot OP2ORSLC and OPEDS wavelngt at peak emission for this srs is mission chaste, plate refer tothe OP609 4g FSS HH tT os jf Wee=80¥ data shet hoe Beige i | | [| wea = CCU Tee Eos iS OCC ne! Po B.peeer titty eit TTT | TEST CONOITIONS: \\ WHT = LINE rr a a ou os 08 10 a ste eee th — as ‘Tproslectroni ics Division, AW Electronic Tomponents Group, 216 W. Crosby Ta. Tarraliton, TX 7e008 1214) S2520 1, TX 5716080 or 216040
OPTEK TECHNOLOGY INC ObE D I 6794580 0000127 4 I ] Types OP269SLC, OP269SLB, OP269SLA T- U\\-13 Electrical Characteristics (T = 25°C unless otherwise noted) [Symi | Parameter [Unie | ———Yeat Condos] Ee(APTI® | Apertured Radiant Incidence ‘OP269SLC Mo. Tre Mes. miWiem?| If = 20 mA ee Sees OP26asta | 0.45 mWilem? | Ip = 20 mA DL EC 0 Typical Performance Curves Cc Forward Voltage va. Forward Voltage and Radiant Incidence Forward Voltage va. q i Forward Current : vs. Forward Current 7 uo Ambient Temperature Tea Gdns a hak 9 C1 je LL tote fee eee
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ee ail Z? eee NE eM rr i- eet et ge ff EEE ELLUM =a “are i ="CTTALEAILL| a a Pd “ ra Ee LUE TT Tl woe, it yor rr) Pr a vas a err = et — an + amt con = “aaa xe 8 . Rise Time and Fall Time vs. Relative Radiant Intensity and Wavelength Relative Radiant Intensity vs. Forward Current at Peak Emission vs. Ambient Temperature ‘Angular Displacement ul 8 “TT Tees, (Tae x [TTT LX [TT ost erste ENB 2” W a 1s Ete (Ef Y | VY nosceeH PANS ET CeCe i” tS tH iD PT TN ar TT ts i a i eee ee meee tt] Eel 1 oS OO CECT TT ,t o 100 200 300 60-25 0 25 $0 75 100 125 Cr a a rh =e cote — der sane" 1 cans wait - Opes ‘TRW reserves the right to make changes at any time in order to improve design and to supply tho best product possible. ‘Thtoclectronies Division, AW Electronic Tomponents Group, 7 BW. Crosby Fa., Cerroliton, X To00e 1214) 3252000, TX OT T6082 or 21040 © TAW Inc. 1985. TRW is tha name and merk of TAW Inc. Printed in USA. n .