OP268FA OPTEK | Alldatasheet
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Product Bulletin OP268F St ° June 1996 CC GaAlAs Plastic Infrared Emitting Diodes Types OP268FA, OP268FB, OP268FC ee wey ‘ o = . = 055 (1.40) ange -120°(3. a EME ING iS Wee ee ROP ot eR, A, 990 (2.29) Bee ee 1485 (4.19) a 100, (2.84) | 207078) Ree BS ba a S 185 (3.94) No “h T a i ey (oss) cATHODE _| EA) CAs Ee . $00 (12.70) =f z 5s Ebuaiai a "FOR IDENTIFICATION PURPOSES ANODE LEAD IS Eres OG A ee ee Boo! C12) Noa! Conte tra a OBE eas DIMENSIONS ARE IN INCHES (MILLIMETERS) Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) to the OP508F series phototransistor —_ Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering and the OP538F series WOM) 2s ee eee ee eee eee eee eect e eee eee etn ecneteen ee erteenee ess « 260° 60) Notes: Description (1) RMA flux is recommended. Duration can be extended to 10 seconds max. when flow . soldering. Maximum 20 grams force may be applied to the leads when soldering. The OP268F series contains a gallium (2) Derate linearly 1.33 mWP C above 25°C. aluminum arsenide infrared emitting (3) Ee(apr) is a measurement of the average apertured radiant energy incident upon a sensing diode mounted in an “end-looking’ area 0.081" (2.06 mm) in diameter perpendicular to and centered on the mechanical axis of ban ane the “emitting surface” and 0.400" (10.16 mm) from the measurement surface. Ee(aPr) is not miniature black package. This device necessarily uniform within the measured area. has a wide radiation angle due to its flat emitting surface. Small size and 0.100" Typical Performance Curves (2.54 mm) lead spacing allow P Ch in Radi . . cogs considerable design flexibility. 'ercent Changes in jadiant Intensity Coupling Characteristics vs Time of OP268F and OP5SO8F/OP538F ee “TOE Sa = * SSS i tH face + SRE « TUT = 5 | CCOIPSSReM “OI 3 3 e LTT TITTY = ,, oy ot Re HEH OCPNSECO “ Me LLL SAL 100 1K 10K 100K o 02 0 08 08 to t- TIME - Hours DISTANCE BETWEEN LENS TIPS - inches Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 2-44
Types OP268FA, OP268FB, OP268FC Electrical Characteristics (Ta = 25° C unless otherwise noted) [svueor[ Parameter —__[ wn | Tv [wax] wits | Test conprrions | Ee(apT) | Apertured Radiant Incidence OP268FC. 0.36 > | | OP268FB | (0.45 mWiem® | Ip = 20 ma | | OP268FA | 0.64 \\ | [We [ronwardvotage || to |v Iezoma Ls [ean Between Har PowerPon | [eo | | am e=toma {pat [epost sntwinTonperaue || -0s8| | am®0 lireconsant | [pap —lemeson age tat PowerPons || 4 | | Deg readme | [t lOuputrise tine || 800 | siren = 100ma, [u _[ouputrantime | aso | ne Pe TO Oe Typical Performance Curves Forward Voltage vs Forward Voltage and Radiant Incidence Forward Voltage vs Forward Current vs Forward Current Ambient Temperature 16 s 1s 20 rar) tbh ae 3 Ta=25°C lo -° eee tig A.2 8. a. ee ee PCT ie a bo = Fy “COPPA = aoe). wr or 10 10 100 o 02 o4 06 os 10 0 40 hd bed bad 0 100 lg - FORWARD CURRENT - mA ig - FORWARD CURRENT - Amps Ty ~ AMBIENT TEMPERATURE - °C Rise Time and Fall Time vs Relative Radiant Intensity and Wavelength Relative Radiant Intensity vs Forward Current at Peak Emission vs Ambient Temperature Angular Displacement 1s 20 980 1 ty Cycle = Duty Cycle = 0.1% = PETE LL rN [| Tae 25°C Eis {— Normalized at To=25°C 4 925 5 ea) | | WENCH PELIVTTN mopssce} 7-HN Hp So E = =| 3 XJ B Boe i ope eS LENS EES — : Fy MFT Sg. LEELA Et . s "PEIZTIITTITN se ee [ebet | be |G PALA N Ferre (ETT TT) LTT tT TTT ° ° 40 ° ° 100 200 300 ~s0 -2 0 75 «50 75 100 aoe oe 40" 20° oF 20" 40" GO 80 tp ~ FORWARD CURRENT - mA Ta ~ AMBIENT TEMPERATURE - °C 6 - ANGULAR DISPLACEMENT ~ Degrees Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carroliton, Texas 75006 (972)323-2200 Fax (972)323-2396 2-45