OP266W OPTEK | Alldatasheet
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Technical content
Product Bulletin OP266W SD. _ June 1996 SSS . "aa" . GaAlAs Plastic Infrared Emitting Diode Type OP266W ee So eee ne ee NEASLREVENT SURFACE Hew eee tee | saan pee ee 18 G8) mene “S27 porte ks ee Gee ed 1S. .060 (1,52) NOM SHORTER WAN ANODE” LEAD Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) applications Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 Sec. with soldering © T-1 package style 1) eer 260°C GaAs at equivalent drive currents Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Amax. of 20 f be applied to the leads when soldering. ‘ot (2) Derate nearly 1.83 mG. HPleafo he leads when soldering
Description
The OP266W is an 890 nm high Typical Performance Curves intensity gallium aluminum arsenide Percent Changes in Radiant Intensity Coupling Characteristics infrared emitting diode molded in an IR vs Time of OP266W and OPS06W transmissive amber-tinted epoxy to package. This package is a T-1 style in _ all respects except for the length of the ° Seed | | 4 fgcsov plastic package. Lead spacing on this * sso I t oe T=25C part is .100 inch (2.54 mm). ow LL Lit} 1 -—— 5 LLU ered. Fy th = LCP eo ee bees HET es oy erro 100 “ rx r00K o on oz 03 cry os
1 TIME ~ Hours DISTANCE BETWEEN LENS TIPS - Inches
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 2-42
Electrical Characteristics (Ta = 25° C unless otherwise noted) | SYMBOL | PARAMETER | MIN TYP _MAX_UNITS | TEST CONDITIONS | Po __|Radiant Power Output (400 mW |lp=20mMA [ve Forwardvotage 80 2OmA In |Reverse Current | ; 100 yA |Va=2V ip __ (Wavelength at Peak Emission | 890 am lip=10mA Een 2 ; a 2 B _ Spectral Bandwidth Between Half Power Points 80 | nm |lp=10mA zis | 8 Sree constant Poss | aap/aT | Spectral Shift with Temperature | +0.18 nm? C |Ip=Constant | =” 1 @HP | Emission Angle at Half Power Points | 90 | Deg. jIr=20mA _ | | tr ‘Output Rise Time | 500 ns 'Ie(pK) = 100 mA, t, [Output Fall Time | "250 | ns (PW |= 10s, D.C. “= 10% Typical Performance Curves Forward Voltage vs Forward Voltage and Radiant Incidence Forward Voltage vs Forward Current vs Forward Current Ambient Temperature s 150 : ta a HBA beret 225 9 = rast . me wath 100 ” | | “rise TPT) g «psa oe oh HK Za HL pall Bf shang of pis os Ceri) =e Pea db ge. tt PComcoico) «eae oe iS Soo sees "COMET + wie P “COT IL Tuy ae ey or 10° 10 100 o 02 o« os «08 10 0-40 o 40 J 120160 Ig - FORWARD CURRENT - mA Ig ~ FORWARD CURRENT - Amps Ty - AMBIENT TEMPERATURE - °C Rise Time and Fall Time vs Relative Radiant Intensity and Wavelength Relative Radiant Intensity vs Forward Current at Peak Emission vs Ambient Temperature Angular Displacement os 20 150 : ety AES |) COO Duty Cych = 10% = E IN Z os : ; S ELLA ro ee POPPE PUNE bs eee] wjeteoe TE Tg, ins . EB W i FE - 3 = 02 4 hs Seco freee LZ ING je ee eee -s0 -3 0 075 100 ‘5 Fommaao Conner ~ mA Mawnan ewer = . 4 avguan OSPACEMENT- Degrees ° Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 2-43