OP234W OPTEK | Alldatasheet
Document overview
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Technical content
- Very high speed
- Enhanced temperature range
- Wide irradiance pattern
- Mechanically and spectrally matched to the OP800WSL and OP830SL series devices
- Significantly higher power output than GaAs at equivalent drive currents
- TO-46 hermetically sealed package
- Case is electrically connected to the cathode De scrip tion The OP234W device is an 850 nm gallium aluminum arsenide infrared emitting diodes mounted in hermetically sealed packages. The broad irradiance pattern provides relatively even illumination over a large area. Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted) Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds max. when flow soldering. (2) Derate linearly 2.0 mW/ o C above 25o C. (3) Ee(APT) is a measurement of the average radiant intensity emitted by the IRED within a cone formed from the IRED chip to an aperture. The aperture of diameter 0.250” is located a distance of 0.466” from the flange (measurement plane) to the aperture plane (parallel to the measurement plane) along the optical and mechanical axis. The cone formed is a 30 ° cone. The radiant intensity is not necessarily uniform within the measured area. (4) Measurement made with 100 µs pulse measured at the trailing edge of the pulse with a duty cycle of 0.1% and an I F = 100 mA. Prod uct Bul le tin OP234W P R E L I M I N A R Y July 2001 GaA lAs Her metic In fra red Emit ting Di odes Type OP234W
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble. Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396 Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted) SYM BOL PA RAME TER MIN TYP MAX UNITS TEST CON DI TIONS Ee(APT) Apertured Radiant Incidence 5.0 -- mW/cm2 IF = 100 mA(3)(4) PO Power Output 17 mW IF = 100 mA VF Forward Voltage 2.0 V IF = 100 mA(4) IR Reverse Current 100 µA VR = 2.0 V λp Wavelength at Peak Emission 850 nm IF = 10 mA B Spectral Bandwidth Half Power Points 50 nm IF = 10 mA ΔλP/ΔT Spectral Shift with Temperature +0.30 nm/oC IF = Constant θHP Emission Angle at Half Power Points 60 Deg. IF = 100 mA tr Rise Time 15 ns IF(PK) = 100 mA, PW = 10 µs, D.C. = 10%tf Fall Time 10 ns