OP160SL OPTEK | Alldatasheet
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OPTEK TECHNOLOGY INC QbE D 4798580 oooOLOL 7 | Optoelectronics Division _—_ i) \\-\\ | | lem \\atombal ~ TRW Electronic Components Group \\ Ite Product Bulletin 6042 January 1985 GaAs Plastic Infrared Emitting Diodes ~ Types OP160SL, OP160SLD, OP1G0SLC, OP160SLB, OP160SLA - tenons twos nner veiormanr amit wT S88 an pm [a a Lai Lege "* FOR IDENTIFICATION PURPOSES, ANODE LEAD IS .060(1.52) NOM. LONGER THAN CATHODE LEAD. Features Absolute Maximum Ratings (T4~26°C unless otherwise noted) © Selected to specific on-line intensity ranges Reverse Voltage... ees eeeceeeeceeneteueetenetceeeceueeseeeecseeesenn seen ees QO V ‘OP500-OPSO0SL series phototransistors and the Lead Soldering Temperature (1/16 inch {1.6 mm] from case for sec. with ‘soldering iron! 240°C Description ta 8 Ares Duran on bed 0nd. wen aw oli, ‘The OPIGOSL series devices are gallium arsenide rate linear i'e at _ “ 7 end-looking packages. The OPIG0SL series allows FIAPT isnot necessary wrifrm wiin the measured area. @ broad range of intensity selection. The narrow radiation pattern provides high on-axis inony for Typical Performance Curves txcelent coupling efficiency with an OP6OO or Porcent Changes in Radiant intensity Coupling Characteristi OPSOOSL series T-1 phototransistor. For additional 'g Characteristics ijecrnin on specie anaace coe, vs Tine of OP 60SL and OPS00 please refer to the OP500 data sheet, we ofl TIM =f SS Beet ES Sone Ra Sey at i Ltt SCCnPTRS TR Bet 4 Rie! “ citi) es XE A LETT ge CNT ea femme TUT TTT dee ee ae wo UTE atl | TF TS t= toe rate ert 8 Thtodl lectronics Division, TAW Electronic Components Group, Tai6 W. Crosby Ad., Carralton, 1X 76006 (214) 323-2200, TLX B7iG030 or 215040
OPTEK TECHNOLOGY INC ObE D 4798580 Oooo1O? 4 I Types OP160SL, OP160SLD, OP160SLC, OP160SLB, OP160SLA . an ee Electrical Characteristics [T4=25°C uniass otherwise noted TMA" [Symbol [Parameter | Min. | Typ. [ Max. [Unite] Test Conditions, | cd | Apartured Radiant Incidence opreost. | 0.05 mWicm? | IF 20 mA OPIGOSLD | 0.28 0.95 | mW/cm2| if=20 mA OPIGOSLC | 0.86 1.80 | mWiem?} IF=20 mA OPIG0SLB | 1.40 22 | mWiem?] If=20 mA 7 OPIGOSLA | 1.95 |mWiem? | I= 20 mA - a Le fem TT fete Typical Performance Curves : Forward Voltage vs Forward Voltage and Radiant Incidence Forward Voltage vs Forward Current vs Forward Current Ambient Temperature ee TTT ae . “fest e Ceri =z. W).8 B.-PPr gs“ bo a CL Seay" eer ee de Pr TT = § oes (a "COMET «=e oe eT “COMIC EEE“ aac ~HUITTITT EEE ee Rise Time and Fall Time vs Relative Radiant Intensity and Wavelength Relative Radiant Intensity vs Forward Current at Peak Emission vs Ambient Temperature Angular Displacement AH . “, (OTT Renin mT Fe TTA aos OP ea io LCL PE CI ropscee) 7-H ! Roe UCN EEE eee ce CeeCee meme TT) EF Lt LAL a mute TT. LEVEL IN ee CE ee ee ‘TRW reserves the right to meke changes at any time in order to improve sign and to supply the best product possible, ‘Tptoslectronies Division, FAW Electronic Components Group, i216 7 Crosby 7a., oie K 7e008 PALIEVERT 1, TX 6710032 oF Trees © TRW Inc. 1985. TRW is the name end merk of TW Inc. Printed in USA W