OP140A OPTEK | Alldatasheet

Document overview

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Technical content

  • Wide irradiance pattern
  • Selected to specific on-line intensity ranges
  • Low cost, miniature plastic side- looking package
  • Mechanically and spectrally matched to the OP550 series of phototransistors and the OP560 series of photodarlingtons De scrip tion The OP140 series devices are 935nm high intensity gallium arsenide infrared emitting diodes molded in IR transmissive plastic side-looking packages. The side looking packages are for use in PC board mounted slotted switches or as an easy mount PC board interrupter. Re places OP140SL series Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted) Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. A max. of 20 grams force may be applied to the leads when soldering. (2) Derate linearly 1.33 mW/o C above 25o C. (3) Ee(APT) is a measurement of the average apertured radiant incidence upon a sensing area 0.180" (4.57 mm) in diameter perpendicular to and centered on the mechanical axis of the lens and 0.653" (16.6 mm) from the lens tip. Ee(APT) is not necessarily uniform within the measured area. Prod uct Bul le tin OP140A May 1996 GaAs Plas tic In fra red Emit ting Di odes Types OP140A, OP140B, OP140C, OP140D 2-10

Types OP140A, OP140B, OP140C, OP140D Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted) SYM BOL PA RAME TER MIN TYP MAX UNITS TEST CON DI TIONS Ee(APT) Apertured Radiant Incidence OP140D OP140C OP140B OP140A 0.10 0.20 0.30 0.40 0.40 0.55 mW/cm2 mW/cm2 mW/cm2 mW/cm2 IF = 20 mA(3) IF = 20 mA(3) IF = 20 mA(3) IF = 20 mA(3) VF Forward Voltage 1.60 V IF = 20 mA IR Reverse Current 100 µA VR = 2.0 V λp Wavelength at Peak Emission 935 nm IF = 10 mA B Spectral Bandwidth Between Half Power Points 50 nm IF = 10 mA ΔλP/ΔT Spectral Shift with Temperature +0.30 nm/oC IF = Constant θHP Emission Angle at Half Power Points 40 Deg. IF = 20 mA tr Output Rise Time 1000 ns IF(PK) = 100 mA, PW = 10 µs, D.C. = 10%tf Output Fall Time 500 ns 2-11