OP130_14 OPTEK | Alldatasheet

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Technical content

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 3 23-2396 sensors@optekinc.com www.optekinc.com Issue B 10/2012 Page 1 of 4 Hermetic Infrared Emitting Diode OP130 Series Description: Each OP130 series device is a 935 nm gallium arsenide (GaAs) infrared LED mounted in a hermetically sealed TO -46 package that provides an enhanced temperature range with a variety of power ranges The TO-46 housing also offers high power dissipation and superior protection for hostile environments. Each OP130 device has a narrow beam with an inclusive angle at half power points of 18°. Each OP130W series device has a broad irradiance pattern of 50° at half power points, providing relatively even illumination over a large area. These devices are designed to efficiently operate with OP800, OP593, OP598 and OP599 phototransistors or the OP830 photodarlington. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data. Custom electrical, wire and cabling and connectors are available. Contact your local representative or OPTEK for more information. Features:

  • TO-46 hermetically sealed package
  • Focused and non-focused optical light pattern
  • Enhanced temperature range
  • Mechanically and spectrally matched to other OPTEK devices
  • Choice of power ranges
  • Choice of narrow or wide irradiance pattern Applications:
  • Non-contact reflective object sensor
  • Assembly line automation
  • Machine automation
  • Machine safety
  • End of travel sensor
  • Door sensor “W”

Ordering Information

(mW/cm2) Min / Max Lens Type Total Beam Angle Lead Length (Min) OP130 1.0 / NA Dome 18° 0.50" OP131 3.0 / NA OP132 4.0 / NA OP133 5.0 / NA OP130W 1.0 / NA Flat 50° OP131W 3.0 / NA OP132W 4.0 / NA OP133W 5.0 / NA 935 nm RoHS

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 3 23-2396 sensors@optekinc.com www.optekinc.com Issue B 10/2012 Page 2 of 4 Hermetic Infrared Emitting Diode OP130 Series OP130, OP131, OP132, OP133 OP130W, OP131W, OP132W, OP133W Pin # LED

1 Anode

2 Cathode

[MILLIMETERS]DIMENSIONS ARE IN: INCHES [MILLIMETERS]DIMENSIONS ARE IN: Cathode Anode

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 3 23-2396 sensors@optekinc.com www.optekinc.com Issue B 10/2012 Page 3 of 4 Hermetic Infrared Emitting Diode OP130 Series Absolute Maximum Ratings (TA=25°C unless otherwise noted) Storage Temperature Range -65o C to +150o C Reverse Voltage 2.0 V Continuous Forward Current 100 mA Peak Forward Current (2 us pulse width, 0.1% duty cycle) 10.0 A Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C (1)(2) Power Dissipation 200 mW(3) Operating Temperature Range -65o C to +125o C Notes: 1. RMA flux is recommended. Duration can be exten ded to 10 seconds maximum when flow soldering. 2. Derate linearly 2.0 mW/° C above 25° C. 3. Measurement made with 100 µs pulse measured at the tra iling edge of the pulse with a duty cycle of 0.1% and an IF = 100 mA. Electrical Characteristics (TA = 25°C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode PO Radiant Power Output OP130, OP130W OP131, OP131W OP132, OP132W OP133, OP133W 1.0 3.0 4.0 5.0 mW IF = 100 mA(3 ) VF Forward Voltage - - 1.75 V IF = 100 mA (3) IR Reverse Current - - 100 µA VR= 2.0 V λP Wavelength at Peak Emission - 935 - nm IF = 10 mA β Spectral Bandwidth between Half Power Points - 50 - nm I F = 10 mA Electrical Characteristics (TA = 25°C unless otherwise noted — for reference only) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode ∆λP /∆T Spectral Shift with Temperature - +0.30 - nm/°C I F = Constant θHP Emission Angle at Half Power Points OP130 series OP130W series Degree I F = 100 mA tr Output Rise Time - 1000 - ns IF(PK)=100 mA, PW=10 µs, and D.C.=10.0% tf Output Fall Time - 500 - ns

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 3 23-2396 sensors@optekinc.com www.optekinc.com Issue B 10/2012 Page 4 of 4 Hermetic Infrared Emitting Diode OP130 Series Distance vs Output Power vs Forward Current Distance (inches) Normalized Output Power 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 80 mA 100 mA Normalized at 0.6" and 50 mA Forward Current Forward Voltage vs Forward Current vs Temperature 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 5 10 15 20 25 30 35 40 45 Forward Current (mA) Typical Forward Voltage (V) -65°C -40°C -20°C +0°C +20°C +40°C +60°C +80°C +100°C +125°C OP130 Series (including “W” devices) Optical Power vs I F vs Temp 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 5 10 15 20 25 30 35 40 45 50 Forward Current I F (mA) Normalized Optical Power -65°C -40°C -20°C +0°C +20°C +40°C +60°C +80°C +100°C +125°C Normalized at 20 mA and 20 o C